渤海南部海域沉积物-海水界面附近磷、硅赋存形态及其生物地球化学过程研究

本文系统研究了渤海南部海域沉积物-海水界面附近（包括上覆水、悬浮颗粒物和沉积物）P���Si的赋存形态及其生物地球化学过程。其特色在于提出了“自然粒度下形态研究”的概念，探讨了能真正参与循环的P���Si及其控制关键环节，为渤海资源特别是生物资源的可持续利用战略的制定提供理论基础。得到的主要结论包括：研究了渤海南部海域覆水、悬浮颗粒物中P���Si的变异特征。上覆水体PO_4-P���SiO_3-Si的平均含量均低于大洋底层水PO_4-P���SiO_3-Si的平均含量。悬浮颗粒物中TIP���BP���来源和循环控制机制不同，TISi、BSi有一定的相似性。稀释作用和表层沉积物中可交换态P���Si的循环控制上覆水体中P���Si的地球化学行为。颗粒物中TIP���TISi的行为受离子交换和化学吸附过程影响，其中化学吸附可能与Fe（III）的氧化物有关；生物过程对颗粒物中生源P���Si的地球化学行为有重要影响。渤海南部海域沉积物P���Si的分布特征及其成岩过程研究表明。表层沉积物可交换态磷中，OSF-P���磷的优势赋存形态，占总磷的10.7%；CF-Si是硅的优势赋存形态，占总硅的0.05%。 不同形态P���成岩过程有一定的相似性。TSi与其它相中的Si呈负相关或不呈显著相关，且可交换态Si的量仅占总Si的0.12%以下，说明以往采用测定总Si含量来研究Si的生物地球化学过程不可能得出有价值的信息。IMOF-P���OSF-P���IMOF-Si、CF-Si在P���Si的生物地球化学循环中有重要作用。CaCO_3、Fe（III）和Corg等对P���Si界面循环有重要影响，有机质的钙化导OSF-P���矿化作用而释放P���Fe（III）的还原引起IMOF-P��� CF-P���CF-Si对P���Si的释放。Corg的成岩过程对CF-Si有影响。约79%的BP���75%的BSi沉积后转化为相对稳定状态，在较短时间内不再参与循环。柱状沉积物中，OSF-P���CF-P���间存在沉积转化。CF-Si呈双指数分布。P���Si在表层沉积物中垂向分布的差异，表明底栖生物扰动对加强界面P���Si交换的作用。室内模拟沉积物-海水界面附近P���Si交换过程表明，P���Si在沉积物、上覆海水间的交换通量分别为0.8μ mol/ (m~2 · h)。P���Si的埋藏与释放主要受OSF-P���IMOF-Si 和平共处BSi的影响。对渤海P���Si年循环的估算显示，P���渤海湾、莱州湾的年循环量达30.9 * 10~5kg 和13.8 * 10~5kg， Si则分别为22.8 * 10~7 kg和15.5 * 10~7 kg，这其中沉积物向上覆海水扩散的P���87.7%和87.0%， Si占22.4%和14.2%。就整个渤海而言，沉积物向海水释放的磷、硅在其总循环中分别占88.7%和34.0%，所以沉积物-海水界面过程对磷、硅在渤海的生物地球化学循环有重要影响，是渤海P���Si循环的关键控制过程之一。

Ocean urea fertilization for carbon credits poses high ecological risks

The proposed plan for enrichment of the Sulu Sea, Philippines, a region of rich marine biodiversity, with thousands of tonnes of urea in order to stimulate algal blooms and sequester carbon is flawed for multiple reasons. Urea is preferentially used as a nitrogen source by some cyanobacteria and dinoflagellates, many of which are neutrally or positively buoyant. Biological pumps to the deep sea are classically leaky, and the inefficient burial of new biomass makes the estimation of a net loss of carbon from the atmosphere questionable at best. The potential for growth of toxic dinoflagellates is also high, as many grow well on urea and some even increase their toxicity when grown on urea. Many toxic dinoflagellates form cysts which can settle to the sediment and germinate in subsequent years, forming new blooms even without further fertilization. If large-scale blooms do occur, it is likely that they will contribute to hypoxia in the bottom waters upon decomposition. Lastly, urea production requires fossil fuel usage, further limiting the potential for net carbon sequestration. The environmental and economic impacts are potentially great and need to be rigorously assessed. (C) 2008 Elsevier Ltd. All rights reserved.

Cloning of two novel P-III class metalloproteinases from Trimeresurus stejnegeri venom gland

Hemorrhagic toxins are widely distributed in viperid and crotalid snake venoms. Envenomation of Trimeresurus stejnegeri, a member of Crotalidae family, caused potent systemic and local hemorrhage. Up to now, there is no report on hemorrhage toxins from th

Lanthanide-hinged calixarene bicapsules: Discrete hexanuclear Ln(III)/phenanthroline/p-sulfonatocalix[4]arene oligomers (Ln = Gd, Tb)

The dumbbell-like calixarene bicapsule in two novel Ln(III)-C4AS compounds was found to be a hexanuclear Ln(III)/phenanthroline/p-sulfonatocalix[4]arene oligomer. The magnetic and luminescent properties of these compounds were examined.

Two Mn(2)(II)Ln(4)(III) (Ln = Gd, Eu) hexanuclear compounds of p-tert-butylsulfinylcalix[4]arene

Two 3d-4f heterometallic compounds of p-tert-butylsulfinylcalix[4] arene were synthesized by the solvothermal method and characterized by some hinged double-dumbbell-like subunits in which two perpendicular dumbbell entities were constructed by an in-between isosceles triangle Mn(II)Ln(2)(III), and two tail-to-tail calixarene molecules, and hinged by the lanthanide-sulfinyl group bonding. The magnetic properties of the title compounds were examined.

Chemical trends of defect formation in Si quantum dots: The case of group-III and group-V dopants

Using first-principles methods, we have systematically calculated the defect formation energies and transition energy levels of group-III and group-V impurities doped in H passivated Si quantum dots (QDs) as functions of the QD size. The general chemical trends found in the QDs are similar to that found in bulk Si. We show that defect formation energy and transition energy level increase when the size of the QD decreases; thus, doping in small Si QDs becomes more difficult. B-Si has the lowest acceptor transition energy level, and it is more stable near the surface than at the center of the H passivated Si QD. On the other hand, P-Si has the smallest donor ionization energy, and it prefers to stay at the interior of the H passivated Si QD. We explained the general chemical trends and the dependence on the QD size in terms of the atomic chemical potentials and quantum confinement effects.

GaN1-xPx ternary alloys with high P composition grown by metal-organic chemical vapor deposition

GaN1-xPx ternary alloys with high P compositions were deposited on sapphire substrates by means of metal-organic chemical vapor deposition. Depth profiles of the elements indicate that the maximum P/N composition ratio is about 17% and a uniform distribution of the P atoms in the alloys is achieved. 2theta/omega XRD spectra demonstrate that the (0002) peak of the GaN1-xPx alloys shifts to smaller angle with increasing P composition. From the photoluminescence (PL) spectra, the red shifts to the bandedge emission of GaN are determined to be 73, 78, 100 and 87 meV for the GaN1-xPx alloys with the P/N composition ratios of 3%, 11%, 15% and 17%, respectively. No PL peak related to GaP is observed, indicating that the phase separation between GaN and GaP is well suppressed in our GaN1-xPx samples. (C) 2003 Elsevier Science B.V. All rights reserved.

Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices

Various techniques on the growth of self-assembled compound semiconductor nano-structures (quantum dots, QDs) have been tried to enhance the controlling on size, density, emitting wavelength, uniformity in size and ordering in location of the QDs. Optimized growth conditions have been used in the application of the QD materials in opto-electronic devices. High-power long-lifetime quantum-dot laser-diodes (QD-LDs) emitting near 1 mu m, QD-LDs emitting in red-light range, 1.3 mu m QD-LDs on GaAs substrate and quantum-dot super-luminescent diodes (QD-SLDs) have successfully been achieved.

Self-heating effect in 1.3 mu m p-doped InAs/GaAs quantum dot vertical cavity surface emitting lasers

The self-heating effect in 1.3 mu m p-doped InAs/GaAs quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) has been investigated using a self-consistent theoretical model. Good agreement is obtained between theoretical analysis and experimental results under pulsed operation. The results show that in p-doped QD VCSELs, the output power is significantly influenced by self-heating. About 60% of output power is limited by self-heating in a device with oxide aperture of 5x6 mu m(2). This value reduces to 55% and 48%, respectively, as the oxide aperture increases to 7x8 and 15x15 mu m(2). The temperature increase in the active region and injection efficiency of the QDs are calculated and discussed based on the different oxide aperture areas and duty cycle.

稀土(III)及铜(II)、锌(II)有机磷（膦）酸酯配合物的晶体结构和振动光谱研究

本文包括标题配合物的结构和振动光谱两部分，共涉及了M(DMP)_n {n=2.3, M=2a, Nd, Cu. Zn}, Ln(DPP)_3{2n=2a-2u, Y}和Ln(BBP)_3 {Ln=La-Lu. Y}三类三十四个配合物。在结构方面，首次测定了Zn(DMP)_2和Cu(DMP)_2呈现出链状配位高聚结构，而La(DMP)_3, La(DMP)_3则为平面网状配位高聚结构。在Zn(DMP)_2, La(DMP)_3和Nd(DMP)_3中，配体以对称“O－P���O”桥键与金属原子配位，在相邻金属原子间形成双桥键。在Zn(DMP)_2中，每个Zn原子通过“O－P���O”双桥键与另两个Zn原子连接，Zn原子配位数为4，配位多面体为四面体构型；在La(DMP)_3和Nd(DMP)_3中，每个稀土原子通过“O－P���O”双桥键与另外三个稀土原子相连接，稀土原子的配位数为6，配位多面体LnO_6为八面体构型。在Cu(DMP)_3中， 配体以对称和非对称“O－P���O”桥键两种形式存在，其中非对称配位的配体形成为“Cu-O-P_O-Cu"-Cu，在铜原之间形成了一个单氧桥键。每个Cu原子通过双“O－P���O”桥键以及双单氧原子桥键与另外三个Cu原子相连接，Cu原子配位数为5，配位多面体为四角锥构型。在振动光谱方面，得到了上述配合物较为完整的光谱数据，并对主要光谱带进行了归属，如V_(M-O), V_(PO_2), V_(P-O(c)),VC-O, VP-C及σ_PO_2等。在稀土配合物中，稀土配位键的伸缩振动V_(vn-o)位于250cm~(-1)附近。V_(Cu)和V_(Zn-o)，在Cu(DMP)_2和Zn(DMP)_2中，分别为(412cm~(-1), 370cm~(-1))和(393cm~(-1), 386cm~(-1))。V_(as)PO_2和V_sPO_2，在配合物振动光谱中，分别在1130－1249cm~(-1)区和1084－1156cm~(-1)区。在稀土配合物中，VL_(n-o), V_(as)PO_2频率值，随镧系收缩逐渐递增。在Cu(DMP)_2红外谱中，非对称配体和对称配体的V_(as)PO_2和V_sPO_2, 分别为(1249cm~(-1)，1156cm~(-1))及(1177cm~(-1)，1090cm~(-1))，其劈裂值△V(V_(as)PO_2-V_sPO_2)为93cm~(-1)和87cm~(-1)。通过对配合物的常温和低温红外光谱的比较，确认了La(DMP)3和Nd(DMP)_3的176cm~(-1)、Ln(DPP)_3和Ln(BBP)_3的150cm~(-1)附近吸收为晶格振动。Ln(DPP)_3、Ln(BBP_3)的光谱性质与Ln(DMP)_3相似，我们认为它们之间具有相同的骨架结构－平面网状配位高聚结构。

铜（III）及相关化合物的合成和性质的研究，稀土复合氟化物电性、氧敏和氢敏性质

本论文包括两部分内容。第一部分为“Cu(III)及相关化合物的合成和性质的研究”；第二部分为“稀土复合氟化物的电性、氧敏和氢敏性质”。第一部分的主要内容有：1.制备了Na_4H[Cu(H_2TeO_6)_2]·17H_2O和Na_4K[Cu(HIO_6)_2]·12H_2O的Cu(III)单晶配合物。2.在比较相应的Cu(II)化合物的条件下，详细地研究了这二个Cu(III)配合物的电子光谱和Cu2p���电子能谱，由于价态升高，场强参数增大，Cu(III)化合物的d-d跃迁相对于Cu(II)化合物d-d跃迁，发生“蓝移”。3.成功地实现了用O_3和电化学方法对强碱溶液中Cu(II)配合物的氧化，获得了二个新的Cu(III)固态配合物Ba_4K[Cu(H_2TeO_6)_2] (OH)_4·6H_2O和Ba_3K[Cu(HIO_6)_2] (KOH)_(0.5)(OH)_2·8H_2O利用化学分析、磁学性质、电子光谱和Cu2p XPS，对这二个化合物进行了表征。4.对BaCuO_(2.5)的合成、电学性质、磁学性质、Cu(III) ESR和Cu2p XPS进行了研究。5.以Na_4K[Cu(HIO_6)_2]·12H_2O和BaCuO_(2.5)为参照物，用电子光谱和Cu2p XPS，确认了YBa_2Cu_3O_(7-5)中的高价态的铜。6.考察了以Cu（III）化合物作为Cu部分原料所合成的YBCO系超导材料的电学性质。第二部分的主要内容有：1.测试了元件“BiF_3(Bi)/Ce_(0.95)Ca_(0.05)F_(2.95)/Pt”的氧敏、氢敏等性能。从室温到130 ℃，元件的氧敏机理为“双电子反应”，电动势（EMF）与氧分压遵循Nernst关系式。室温时，元件对空气中100Pa或1000Pa氢气的响应时间仅为15秒或短于5秒；氢分压在16Pa～1000Pa范围内，EMF与氢分压的对数呈线性关系，斜率为-116mV/decade, 敏感机理表现为“混合电极电势”。元件具有良好的氢敏性能，并有一定的选择性。2.合成并测试了La_(1-x)Pb_xF_(3-x)(X = 0.00 ～ 0.15)的电导率，La_(0.95)Pb_(0.05)F_(2.95)的电导率最高，比LaF_3高约一个数量级。以La_(0.95)Pb_(0.05)F_(2.95)为固体电解质材料，Pd或Pt为敏感电极，BiF_3(Bi)或PbF_2(Pb)为参比电极，制成了四个元件。其中，“BiF_3(Bi)/La_(0.95)Pb_(0.05)F_(2.95)/Pt”具有最好的氧敏、氢敏性能。从室温到150 ℃，元件的EMF与1gPo_2附合Nernst关系式。150 ℃时，元件对氧气的响应时间仅为80秒。室温下，元件对空气中100Pa或1000Pa氢气的响应时间仅为75秒或15秒，元件的电动势EMF与氢分压的关系可表示为“E=E_o-96lgP_(H2)(mV)”。元件对CO有较差的敏感性能，而对空气中甲烷、乙烷或乙炔（≤1000Pa）不具敏感性能。3.合成并测试了Ln_(1-x)Pb_xF_(3-x)(Ln=Ce、Pr、Nd和Gd、Dy、Ho、Yb)的电性。前四个系列为离子导体材料，后三个系列可能为P���半导体。随着Ln原子序数增大，LnF_3导电性能变差；La~(3+)、Ce~(3+)、Pr~(3+)、Nd~(3+)与Pb~(2+)离子半径差异较小，LnF_3和PbF_2可以形成固溶体；而Gd~(3+)、Dy~(3+)、Ho~(3+)、Yb~(3+)与Pb~(2+)离子半径差异较大，LnF_3和PbF_2难以形成固溶体。

Guest inducing p-sulfonatocalix[4] arene into three-dimensional capsule architecture and a mixed A-B double layer framework

The reactions of sodium p-sulfonatocalix[4]arene (Na5L) and terbium/europium(III) chloride in the presence of pyrazine-N,N'-dioxide (PNNO) in aqueous solutions gave the crystalline complexes 1 and 2. Both structures contain molecular capsules of p-sulfonatocalix[4] arene with PNNO as guest molecules in the cavity of the calix[4]arenes. The molecular capsules are connected through sodium and terbium (or europium) centers forming a three-dimensional framework.

Synthesis, structural characterization, and ethylene polymerization behavior of the vanadium(III) complexes bearing salicylaldiminato ligands

Vanadium(III) complexes bearing salicylaldiminato ligands (2a-k) [RN=CH(Ar0)]VCl2(THF)2 (Ar C61714, R = Ph, 2a; p-CF3Ph, 2b; p-CH3Ph, 2c; 2,6-Me2Ph, 2d; 2,6-iPr2Ph, 2e; cyclohexyl, 2f; Ar = C6H3tBu(2), R = Ph, 2g; 2,6-iPr2Ph, 2h; Ar = C6H2tBU2(2,4), R = Ph, 2i; 2,6-iPr2Ph, 2j; Ar = C6H2Br2, R = Ph, 2k) were prepared from VC13(THF)3 by treating with 1.0 equiv of (RN=CH)ArOH in tetrahydrofuran (THF) in the presence of excess triethylamine (TEA).

Injection, Transport, Absorption and Phosphorescence Properties of a Series of Blue-Emitting Ir(III) Emitters in OLEDs: a DFT and Time-Dependent DFT Study

Quantum-chemistry methods were explored to investigate the electronic structures, injection and transport properties, absorption and phosphorescence mechanism of a series of blue-emitting Ir(III) complexes {[(F-2-ppy)(2)Ir(pta -X/pyN4)], where F-2-ppy = (2,4-difluoro)phenylpyridine; pta = pyridine-1,2,4-triazole; X = phenyl(1); p-tolyl (2); 2,6-difluororophenyl (3); -CF3 (4), and pyN4 = pyridine-1,2,4-tetrazolate (5)}, which are used as emitters in organic light-emitting diodes (OLEDs). The mobility of hole and electron were studied computationally based on the Marcus theory. Calculations of Ionization potentials (IPs) and electron affinities (EAs) were used to evaluate the injection abilities of holes and electrons into these complexes.