GaN1-xPx ternary alloys with high P composition grown by metal-organic chemical vapor deposition
Data(s) |
2003
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Resumo |
GaN1-xPx ternary alloys with high P compositions were deposited on sapphire substrates by means of metal-organic chemical vapor deposition. Depth profiles of the elements indicate that the maximum P/N composition ratio is about 17% and a uniform distribution of the P atoms in the alloys is achieved. 2theta/omega XRD spectra demonstrate that the (0002) peak of the GaN1-xPx alloys shifts to smaller angle with increasing P composition. From the photoluminescence (PL) spectra, the red shifts to the bandedge emission of GaN are determined to be 73, 78, 100 and 87 meV for the GaN1-xPx alloys with the P/N composition ratios of 3%, 11%, 15% and 17%, respectively. No PL peak related to GaP is observed, indicating that the phase separation between GaN and GaP is well suppressed in our GaN1-xPx samples. (C) 2003 Elsevier Science B.V. All rights reserved. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Chen DJ; Shen B; Bi ZX; Zhang KX; Gu SL; Zhang R; Shi Y; Zheng YD; Sun XH; Wan SK; Wang ZG .GaN1-xPx ternary alloys with high P composition grown by metal-organic chemical vapor deposition ,JOURNAL OF CRYSTAL GROWTH,2003 ,255 (1-2):52-56 |
Palavras-Chave | #半导体材料 #metalorganic chemical vapor deposition #nitrides #semiconducting III-V materials #MOLECULAR-BEAM EPITAXY #GAN-RICH SIDE #RADICAL CELL #III-V |
Tipo |
期刊论文 |