HIRFL双丝束流剖面监测器的研制

兰州重离子加速器（HIRFL）是一个等时性回旋加速系统，它包括一台能量常数K=69的扇聚焦回旋加速器(SFC)和一台K=450的分离扇回旋加速器(SSC)。加速器的束流诊断对加速器的运行而言是必不可少的，为加速器的调束提供直接的依据，在束流参数调整、运行状态监测和优化束流品质方面发挥着重要作用。 本论文主要描述了双丝束流剖面监测器的研制，对其各组成部分、设计和测试都做了详细的介绍。双丝束流剖面监测器使用钨丝作为探针，当带电粒子打到钨丝上，与钨丝中的电子作用使之激发并发射，即产生二次电子。通过把这一过程中形成的电流转化为电压量进行数据采集，便可以得到在钨丝移动方向上的一维束流强度分布。其中，钨丝的移动由运动控制系统来实现。双丝束流剖面监测器只使用了两根钨丝，在测量过程中对束流分布产生的破坏很小，因而属于非拦截式的束流诊断元件。 双丝束流剖面监测器已经在HIRFL前束运线上进行了测试，它能够在较短时间内测量出束流的剖面，结果较好，达到了预期的要求。 由于双丝束流剖面监测器的非拦截性，而且具有使用灵活、测量准确等优点，它必将成为束流诊断中的一个有力的工具

Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on GaAs (311)A substrate by molecular beam epitaxy

Atomic hydrogen assisted molecular beam epitaxy (MBE) is a novel type of epitaxial growth of nanostructures. The GaAs (311)A surface naturally forms one-dimensional step arrays by step bunching along the direction of (-233) and the space period is around 40nm. The step arrays extend over several mum without displacement. The InGaAs quantum wire arrays are grown on the step arrays as the basis. Our results may prompt further development of more uniform quantum wire and quantum dot arrays.

Probe beam deflection combined with cyclic voltammetry studies of C-60-modified electrode film

C-60 films, prepared by solution casting, were studied by means of in situ probe beam deflection (PBD) combined with cyclic voltammetry (CV). PBD is a powerful technique for investigation of phenomena at the electrode/electrolyte interface in acetonitrile with quaternary ammonium and alkali metal salts as supporting electrolytes. In tetra-n-butylammonium (TBA(+)) salt solution, a stable CV can be obtained during the first two reduction/reoxidation waves. On reduction, injection of cations to maintain charge balance and dissolution of small amount of C-60(-) (TEA(+)) and/or C-60(2-) (TBA(+))(2) are detected. During the reoxidation process ejection of cations and injection of anions occur simultaneously, especially for the second reoxidation wave. In the case where TBABr is the supporting electrolyte, the accompanied behavior is more complicated than in TBABF(4), TBAClO(4), and TBAPF(6) solutions. A small pair of prewaves in CV are proposed due to oxidation/reduction of C-60 domains but not dissolution/redeposition of C-60 film. Extending the potential scan range to the third reduction wave, no apparent corresponding reoxidation wave is related to the third reduction wave, the electroactivity of the film disappears rapidly and dissolution of C-60 film is observed. In tetraethylammonium (TEA(+)) and NAClO(4) solutions, the electrochemistry of the C-60 films is unstable, and potential scans lead to dissolution of flaking of the film.

A novel in-situ spectroelectrochemical technique with probe beam deflection: For study of the ion exchange between films on electrode surface and solutions

A novel in-situ spectroelectrochemical technique, the combination of probe beam deflection (PBD) with cyclic voltammetry (CV), was used to study the ion exchange process of prussian blue(PB) modified film electrode in contact with various electrolyte solutions. The ion exchange mechanism was verified as following: (K2Fe2+FeII)(CN)(6) -e(-)-k(+)reversible arrow +e(-)+k(+) (KFe3+FeII)(CN)(6) -ke(-)-xk(+)reversible arrow +xe(-)+kk(+) [(Fe3+FeIII)(CN)(6)](x)[(KFe3+FeII)(CN)(6)](1-x) where on reduction PB film in contact with an acidic KCl electrolyte, it was confirmed that protons enter into the PB film before K+ cations.

Snap-through and pull-in instabilities of an arch-shaped beam under an electrostatic loading

The snap-through and pull-in instabilities of the micromachined arch-shaped beams under an electrostatic loading are studied both theoretically and experimentally. The pull-in instability that results in a system collision with an electrode substrate may lead to a system failure and, thus, limits the system maximum displacement. The beam/plate structure with a flat initial configuration under an electrostatic loading can only experience the pull-in instability. With the different arch configurations, the structure may experience either only the pull-in instability or the snap-through and pull-in instabilities together. As shown in our computation and experiment, those arch-shaped beams with the snap-through instability have the larger maximum displacement compared with the arch-shaped beams with only the pull-in stability and those with the flat initial configuration. The snap-through occurs by exerting a fixed load, and the structure experiences a discontinuous displacement jump without consuming power. Furthermore, after the snap-through jump, the structures are demonstrated to have the capacity to withstand further electrostatic loading without pull-in. Those properties of consuming no power and increasing the structure deflection range without pull-in is very useful in microelectromechanical systems design, which can offer better sensitivity and tuning range.

Experimental investigation of optical beam deflection based on PLZT electro-optic ceramic

Based on the optical characteristics of PLZT electro-optic ceramic, two kinds of electro-optic deflectors, triangular electrode structure and optical phased array technology, are studied in detail by using transverse electro-optic effect. Theoretically, the electro-optic deflection characteristics and mechanisms of the deflectors are analyzed. Experimentally, the optical characteristics of ceramic wafer, such as the phase modulation, the hysteresis and the electro-induced loss characteristics, are measured firstly, and then the beam deflection experiments are designed to verify the theoretical results. Moreover, the effect of temperature on the performance of triangular electrode deflector is investigated. The characteristics of both deflectors are also compared and illuminated. (c) 2007 Optical Society of America.

Fabrication of a Low-Loss SSC Using High-Dose Electron Beam Lithography Exposure With Negative PMMA Resist

A silicon-on-insulator optical fiber-to-waveguide spot-size converter (SSC) using Poly-MethylMethAcrylate (PMMA) is presented for integrated optical circuits. Unlike the conventional use of PMMA as a positive resist, it has been successfully used as a negative resist with high-dose electron exposure for the fabrication of ultrafine silicon wire waveguides. Additionally, this process is able to reduce the side-wall roughness, and substantially depresses the unwanted propagation loss. Exploiting this technology, the authors demonstrated that the SSC can improve coupling efficiency by as much as over 2.5 dB per coupling facet, compared with that of SSC fabricated with PMMA as a positive resist with the same dimension.

Temperature-dependent transport and spin accumulation in a quantum wire with Rashba spin-orbit interaction

We study the theory of temperature-dependent electron transport, spin polarization, and spin accumulation in a Rashba spin-orbit interaction (RSOI) quantum wire connected nonadiabatically to two normal conductor electrode leads. The influence of both the wire-lead connection and the RSOI on the electron transport is treated analytically by means of a scattering matrix technique and by using an effective free-electron approximation. Through analytical analysis and numerical examples, we demonstrate a simple way to design a sensitive spin-transfer switch that operates without applying any external magnetic fields or attaching ferromagnetic contacts. We also demonstrate that the antisymmetry of the spin accumulation can be destroyed slightly by the coupling between the leads and the wire. Moreover, temperature can weaken the polarization and smear out the oscillations in the spin accumulation.

A photonic wire-based directional coupler based on SOI

A photonic wire-based directional coupler based on SOI was fabricated by e-beam lithography (EBL) and the inductively coupled plasma (ICP) etching method. The size of the sub-micron waveguide is 0.34 mu m x 0.34 mu m, and the length in the coupling region and the separation between the two parallel waveguides are 410 and 0.8 mu m, respectively. The measurement results are in good agreement with the results simulated by 3D finite-difference time-domain method. The transmission power from two output ports changed reciprocally with about 23 nm wavelength spacing between the coupled and direct ports. The extinction ratio of the device was between 5 and 10 dB, and the insertion loss of the device in the wavelength range 1520-1610 nm was between 22 and 24 dB, which included an about 18.4 +/- 0.4 dB coupling loss between the taper fibers and the polished sides of the device. (c) 2008 Elsevier B.V. All rights reserved.

Room-temperature continuous-wave operation of InAs quantum-wire laser on InP(001) substrate

A self-assembled quantum-wire laser structure was grown by solid-source molecular beam epitaxy in an InAlGaAs-InAlAs matrix oil InP(001) substrate. Ridge-waveguide lasers were fabricated and demonstrated to operate at a heatsink temperature tip to 330 K in continuous-wave (CW) mode. The emission wavelength of the lasers with 5 mm-long cavity was 1.713 mu m at room temperature in CW mode. The temperature stability of the devices was analysed and the characteristic temperature was found to be 47 K in the mnge of 220-320 K.

Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate

Diagonal self-assembled InAs quantum wire (QWR) arrays with the stacked InAs/In0.52Al0.48As structure are grown on InP substrates, which are (001)-oriented and misoriented by 6degrees towards the [100] direction. Both the molecular beam epitaxy (MBE) and migration enhanced epitaxy (MEE) techniques are employed. Transmission electron microscopy reveals that whether a diagonal InAs QWR array of the stacked InAs/InAlAs is symmetrical about the growth direction or not depends on the growth method as well as substrate orientation. Asymmetry in the diagonal MEE-grown InAs QWR array can be ascribed to the influence of surface reconstruction on upward migration of adatoms during the self-assembly of the InAs quantum wires.

Exciton localization in In0.15Ga0.85As/GaAs quantum wire structures grown on (553)B-oriented GaAs substrate

Using time-resolved photoluminescence (PL) measurements, we have studied the exciton localization effect in InGaAs/GaAs quantum wire (QWR) structures formed in corrugated narrow InGaAs/GaAs quantum wells (QWs) grown on (553)B GaAs substrate. The PL decay time in the QWR structure was found to be independent of the temperature for T < 70 K, showing a typical dynamical behavior of the localized excitons. This result is in striking contrast to the corresponding quantum well structures, where a linear increase of the PL decay time was observed. In addition, an increase of the exciton lifetime was observed at low temperature for the QWR structure as compared to a reference InGaAs/GaAs quantum well sample (1200 vs 400 ps). The observed longer decay time was attributed to the reduction in the spatial coherence of excitons in the QWR-like structure. In PL measurements, a significant polarization anisotropy was also found in our narrow InGaAs/GaAs QWs grown on (553)B GaAs. (C) 2001 American Institute of Physics.

Self-ordering of quasi-quantum wire in InAlAs/AlGaAs multilayer nanostructure and its optical anisotropy

Self-ordering of quasi-quantum wires in multilayer InAlAs/AlGaAs nanostructures grown by molecular beam epitaxy is identified. The chain-like structures along the [1 (1) over bar 0] Of direction formed by coalescence of quantum dots were observed. The photoluminescence of the nanostructures is partially polarized along the [1 (1) over bar 0] direction. The polarization ratio depends on the wavelength and the maximum polarization is on the lower energy side. The maximum polarization increases from 0.32 at 10 K to 0.53 at 100 K, and the energy position of maximum polarization moves near to PL peak with increasing temperature. They are all related to the existence of isolated islands and quasi-quantum wires in our sample. This result provides a novel approach to produce narrow quantum wires. (C) 2000 Elsevier Science B.V. All rights reserved.

Self-organization of wire-like InAs nanostructures on InP

The initial InAs growth on InP(1 0 0) during molecular beam epitaxy has been investigated. The as-grown islands were shaped like nanowires and formed dense arrays over the entire surface in the 3-6 monolayer InAs deposition range. The wires were oriented along the [(1) over bar 1 0] direction. Transmission electron microscopy images confirm that the wires are coherently grown on the substrates. Our results suggest that the coherent wire-shaped island formation may be a possible method to fabricate self-organized InAs nanowires. (C) 1999 Elsevier Science B.V. All rights reserved.