内蒙古克氏针茅草原土壤呼吸作用研究

土壤呼吸是陆地生态系统碳循环中的重要环节，是土壤与大气之间碳交换的主要输出途径。草地生态系统土壤呼吸作用研究在全球碳循环研究中占有十分重要的地位和作用。本研究选取我国内蒙古锡林郭勒盟典型草原区内的克氏针茅草原作为研究对象，基于Li-6400-09便携式土壤呼吸观测系统2005年生长季的野外观测资料，研究了克氏针茅草原土壤呼吸速率的日、生长季动态及其影响因子。研究结果表明： (1)　2005年生长季，克氏针茅草原土壤呼吸速率的日、生长季动态均呈单峰型曲线变化;日最大值和最小值分别出现在10:0013:00和凌晨4:00左右;生长季日均最大值(0.14mgCO2m-2s-1)出现在6月份，日均最小值(0.03mgCO2m-2s-1)出现在8月份。与以往典型草原土壤呼吸研究相比，峰值和最低值出现时间均提前。 (2)　在日尺度上，随着生长期的变化，控制土壤呼吸变化的环境因子有所不同。其中生长季初期和末期土壤呼吸速率日动态的限制因子主要为总辐射，而生长季中期，控制因子为气温和土壤含水量(010cm、1020cm)。在整个生长季的尺度上，影响土壤呼吸动态的环境因子主要为土壤含水量(010cm、1020cm、2030cm)、总辐射和土壤温度(10cm、15cm、20cm)，其协同作用可解释土壤呼吸变化的92%。其中约有72％的土壤呼吸作用变异是由表层土壤含水量(010cm、1020cm)和总辐射共同决定的，而010cm土壤含水量可单独解释土壤呼吸生长季变异的51%。 (3)　克氏针茅草原地上生物量的生长季变化呈单峰曲线型，8月份达到峰值。地下生物量和总生物量(地上和地下之和)在整个生长季的变化比较平缓，但在6月份和9月份分别出现一个峰值。其中，地上生物量是决定同一时间不同地点土壤呼吸速率变化的主要影响因素;而地下生物量对同一地点不同时间土壤呼吸速率变化的作用更为显著。其中地下生物量可解释土壤呼吸速率在整个生长季变异的25％。 (4)　通过灰色关联度方法综合分析环境因子与生物因子(地上和地下生物量)得到各影响因子与日均土壤呼吸速率生长季变化密切程度的相对顺序：0~10cm土壤含水量>地下生物量>10~20cm土壤含水量>20~30cm土壤含水量>气温>20cm土壤温度>5cm土壤温度>15cm土壤温度>10cm土壤温度>地上生物量>总辐射。结果表明：在2005年生长季，土壤含水量(0~10cm)是控制克氏针茅草原日均土壤呼吸速率生长季变化的主导影响因素，其次是植被的地下生物量。气温与土壤呼吸生长季变化的密切程度大于各层土壤温度。而地上生物量和总辐射对日均土壤呼吸生长季变化的影响最弱。

Investigation of mode coupling in a microdisk resonator for realizing directional emission

Mode coupling between the whispering-gallery modes (WGMs) is numerically investigated for a two-dimensional microdisk resonator with an output waveguide. The equilateral-polygonal shaped mode patterns can be constructed by mode coupling in the microdisk, and the coupled modes can still keep high quality factors (Q factors). For a microdisk with a diameter of 4.5 mu m and a refractive index of 3.2 connected to a 0.6-mu m-wide output waveguide, the coupled mode at the wavelength of 1490 nm has a Q factor in the order of 10(4), which is ten times larger than those of the uncoupled WGMs, and the output efficiency defined as the ratio of the energy flux confined in the output waveguide to the total radiation energy flux is about 0.65. The mode coupling can be used to realize high efficiency directional-emission microdisk lasers. (C) 2009 Optical Society of America

川西亚高山森林生态系统辐射传输研究

辐射传输研究是贯穿森林生态系统的纽带，太阳辐射为植物的生长发育提供光合能量、适宜的环境温度以及发育信息。一方面，气候变化使到达地面辐射能的质和量发生变化，影响到植被的生长发育，改变森林的结构，而森林结构的变化又会影响林冠内辐射能的分配和质量，这些变化会进一步影响到林下土壤温度，改变森林根系活性以及土壤营养转化的效率；连锁反应的结果有可能会使森林生态系统的生产力发生变化，改变碳素和氮素源库的调节方向，从而反馈影响地球气候系统。另一方面，人类作为生态系统的成员，必然需要森林生态系统为其提供更多的原材料和更好的生态服务功能，如何实现这些目标，就需要人类适度调整干预方式和频度，达到预期的目的。本文在建立适合于川西亚高山森林的叶面积测量技术、光照辐射模型和土壤温度变化模型的基础上，对川西亚高山地带森林生态系统的辐射传输特征进行了分析，并从森林结构的角度探讨了林分内的辐射分布以及对土壤温度的影响。主要成果如下： 1. 提出了一种照相法测量叶面积的方法。通过对摆放在平面上的叶片照相，利用投影变化，把非正射图像转化为正射图像，然后经过计算机图像处理得到每一片叶片的面积、周长、长度、宽度等信息。这种方法可使用户以任意方向和距离拍摄处于平面上的叶片，能同时处理大量的叶片，适于野外离体或活体叶片测量。叶片面积分辨率可调，分辨率可以与常用的激光叶面积仪相近甚至更高，而且叶片图像可以存档查询。 2. 提出一种模拟林内光照变化的模型。利用林冠半球照片，记录视点以上半球内的林冠构件空间分布，作为林冠子模型；天空辐射子模型采用国际照明委员会(CIE)的标准晴天和阴天以及插值模型。该模型能够模拟林下某一位点处的实时光斑变化。 3. 提出一种土壤温度变化模型。把土壤视为具有容量和阻力性质的结构，利用电阻和电容器件构建土壤能量分布模型。外界太阳辐射能经过植被以及其它一些能量分配器后进入土壤，其中有一部分转化为土壤势能，即土壤温度。土壤温度的变化类似于电池的充放电过程。在已知模型参数的情况下，可以从太阳辐射计算土壤温度的变化。在模型参数未知的情况下，通过输入和输出值推算模型的参数，而模型参数中的时间常数与土壤组成和含水量有关，这样就可以知道土壤水分的变化情况。 4. 从王朗亚高山森林典型样地林分结构的测量获得林地三维结构图、树冠形态、叶面积密度等参数，这些参数输入到Brunner (1998)开发的tRAYci 模型中计算出一段时间内林分任意位置处的光照值。与林下辐射计测量值以及半球照片计算结果的比较，该模型基本上能够满足对林分光环境了解的要求。 5. 从川西亚高山森林生产力的角度，探讨了森林生产力研究的方法以及川西地区的研究历史和成果，发现了其中的一些规律和问题，特别是在叶面积测量上，还没有使用标准的叶面积指数定义。综合来看，川西地区针叶林叶面积指数(单位土地面积上植物冠层总叶面积的一半) 应在4-5 之间。降雨丰富的华西雨屏带是川西地区森林生产力最高的地区，而向西北森林生产力逐渐降低。川西地区云冷杉林森林生产力平均约为600 gDM m-2 a-1，但是根据辐射能计算的潜在生产力则达到1800 gDM m-2 a-1。实际与潜在森林生产力的巨大差异说明其它因子对生产力的影响。 6. 王朗亚高山3 个典型森林林分中，白桦林样地(BF) 林下草本以糙野青茅、牛至、紫菀等喜阳性物种为主，林下透光度较高；冷杉林样地(FF) 林下透光度最低，以喜阴性物种水金凤、蟹甲草、囊瓣芹等为主；而云杉林样地(SF)林分林龄最大，林下透光度介于冷杉林和白桦林之间，草本层仍然以喜阴性物种东方草莓、紫花碎米芥、酢浆草等为主。冷杉林和云杉林的灌木层也很丰富，卫矛属、五加属、茶藨子属、忍冬属植物很丰富，而在白桦林则以栒摘要子属、榛子属、鹅耳枥属等植物为主。藓类植物在云杉林中最丰富，并且形成毯状层，其它两个林分则很稀少。3 个样地林分结构与林下光环境有很强的相关性，从光环境特征可以在一定程度上推测林分的结构。各样地单纯从乔木层材积推算的NPP 排列顺序为BF>FF>SF，与林下辐射透射率和林分年龄的顺序相同，暗示辐射对群落演替过程的驱动作用。 7. 用半球照相法测得BF、FF 和SF 3 个样地的有效叶面积指数以SF 样地最高，BF 最低。如果考虑针叶树叶片在小枝上的丛聚分布，利用北方针叶林的数值进行校正，则SF 样地LAI 显著增加(达到89%)，其它样地的LAI 基本不变甚至有所下降。校正后的数值与文献中地面测量的结果较相近，说明在使用半球照相法测量川西亚高山针叶林LAI 时必须加以校正。 8. 在3 个样地中，白桦、岷江冷杉和方枝柏种群为丛聚分布，紫果云杉在FF和SF 样地中基本上为随机分布。3 个物种出现丛聚分布的最短距离约为2m，在最短距离以内则为随机分布。最短距离可能与树冠大小有关，种子传播特征以及对光照的需求状况可能是造成这种分布格局类型的原因。 Radiative transfer plays a key role in forest ecosystems. Solar radiation providesenergy for photosynthesis, appropriate ambient temperature and development informationfor plants. However, quality and quantity of radiation reaching land surface are affected byweather and subsequently influence the growth and development of plants, which in turnchanges the budget of radiation in forest. Soil temperature changes with the variation ofradiation under forest canopy and influences the activity of roots and rate of nutrientturnover. Thus, any changes of radiation will induce chain reactions in the entireecosystem and display in the value of net primary productivity which will possibly shiftthe relationship between carbon source and sink at local or regional scale and feed back tothe global climate system. On the other hand, as a component of ecosystems, humanbeings of course need to demand more materials and better service from ecosystems. Forthese purpose, man must adapt their pattern and frequency of interference to ecosystems.This paper aims to research on the canopy structure, the radiation distribution and theirinfluence on soil temperature from the process of radiative transfer in subalpine forestecosystem of western Sichuan. The main results are: 1 Present a new photogrammetric method for leaf area. The main idea is to convertnon-vertically taken images of planar leaves to orthoimages through projectivetransformation. The resultant images are used to get leaf morphological parametersthrough image processing. This method enables users to take photos at almost anyorientation and distance if only the leaves are placed on same plane, and to processlarge quantity of leaves in a short time, which is suitable for field measurement. Theresolution of leaf area is adjustable to fit for special requirement. 2 A model using hemispherical photos combining with solar tracks and radiation courseis provided to simulate light variation in forest. The hemispherical photos of canopyrecord the real spatial distribution of each element of plants viewed from a point. Skyradiance is simulated with CIE standard clear sky or cloudy sky model. This modelcan be used to simulate real time light variation under canopy. 3 Present a soil temperature model. Soil could be regarded as a body of resistor andcapacitor. Some of the budget of solar radiation in soil body is transformed into soilpotential energy, the soil temperature. Variation of soil temperature is driven by solarradiation, vegetation, soil properties, etc. This model has two parameters, one of whichis time constant and is related to soil water content. The inversed model can be used tosimulate the variation of soil water. 4 By using model tRAYci developed by Brunner (1998), the 3-D distribution of light inthree subalpine forest stands of Wanglang Nature Reserve has been simulated andvalidated with value of radiometers in these stands. This model can basically satisfythe need for understanding light regimes of these stands. 5 Present some principles and questions of NPP (net primary of productivity) researchesin western Sichuan. The standard leaf area index (LAI) defined by Chen and Black(1997) has not been used in this region. Total leaf area and projected leaf area indexare still used in NPP researches which may differ around 1-fold in magnitude. Thestandard LAI which is a half of total leaf area above unit land area should be between4 and 5 for typical subalpine coniferous forest of western Sichuan concluded fromliteratures. The maximum forest NPP occurs in West China rain belt and decreasesnorthwestwards. Average NPP of spruce-fir forest in western Sichuan is about600gDM m-2 a-1, which is below the potential NPP of 1800gDM m-2 a-1 based onmeasured radiation in this region. The significant difference between potential and realNPP suggests that other factors influence the growth of stands. 6 In the three subalpine forest stands of Wanglang Nature Reserve, herbage layer ofAbstractbirch stand (BF) with age of 40 is dominated by heliophytes of Deyeuxia scabrescens,Origanum vulgare, Aster tongoloa etc.. However, both of the other two stands aredominated by shade tolerent species, such as Impatiens noli-tangere, Impatiensdicentra, Cacalia deltophylla and Pternopetalum tanakae etc. in fir stand (FF) withage of 180 and Fragaria orientalis, Cardamine tangutorum and Oxalis corniculata etc.in spruce stand (SF) with age of 330. Shrub species in the latter two stands arerelatively rich, typical dominant genera being Euonymus, Acanthopanax, Ribes andLonicera. Birch stand has relatively sparse shrubs dominated by genera of Cotoneaster,Corylus and Carpinus. Mosses are significant only in spruce stand. The canopystructure controls the light regime of stand, which influence the composition of herblayers beneath the canopy. This light regime-community structure relationship can beused to infer the herb community from canopy structure. The NPP derived from timbervolume of arbor layer of the three stands decreases from BF to SF, which is in thesame order of transmitted total radiation under canopy and age of these stands,suggesting the driving effect of radiation in the succession of community. 7 The highest effective LAI of the three stands obtained by hemispherical photos is inplot SF and lowest in plot BF. After rectification of the clumping effect of leaves onshoot, the real LAI in plot SF increases significantly (89%) and approximate to theaverage LAI of coniferous forest in western Sichuan. Therefore, the LAI obtainedfrom hemispherical photos needs rectification for clumping effect. 8 Spatial distribution pattern for Betula platyphylla, Abies faxoniana and Sabinasaltuaria is clumpy, but Picea purpurea almost random in plot FF and SF. The shortestdistance for clumpy distribution for Betula platyphylla and Sabina saltuaria is 1.5m,and 2m for Abies faxoniana. And random pattern for these trees is exhibited within thisrange which almost coincides with the diameter of crown. Seed dispersalcharacteristics and light requirement may be the reason for different spatial pattern.

Formation of total-dose-radiation hardened materials by sequential oxygen and nitrogen implantation and multi-step annealing

Separation by implantation of oxygen and nitrogen (SIMON) silicon-on-insulator (SOI) materials were fabricated by sequential oxygen and nitrogen implantation with annealing after each implantation. Analyses of SIMS, XTEM and HRTEM were performed. The results show that superior buried insulating multi-layers were well formed and the possible mechanism is discussed. The remarkable total-dose irradiation tolerance of SIMON materials was confirmed by few shifts of drain leakage current-gate source voltage (I-V) curves of PMOS transistors fabricated on SIMON materials before and after irradiation.

Total Dose Radiation-Hard 0. SOI CMOS Transistors and ASIC

This paper presents the total dose radiation performance of 0. S^m SOI CMOS devices fabricated with full dose SIMOX technology. The radiation performance is characterized by threshold voltage shifts and leakage currents of transistors and standby currents of ASIC as functions of the total dose up to 500krad(Si) .The experimental results show that the worst case threshold voltage shifts of front channels are less than 320mV for pMOS transistors under off-gate radiation bias at lMrad(Si) and less than 120mV for nMOS transistors under on-gate radiation bias. No significant radiation-induced leakage current is observed in transistors to lMrad(Si). The standby currents of ASIC are less than the specification of 5μA over the total dose range of 500krad(Si).

Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides

In order to improve the total-dose radiation hardness of the buried oxides(BOX) in the structure of separa tion-by-implanted-oxygen(SIMOX) silicon-on-insulator(SOI), nitrogen ions are implanted into the buried oxides with two different doses,2 × 1015 and 3 × 1015 cm-2 , respectively. The experimental results show that the radiation hardness of the buried oxides is very sensitive to the doses of nitrogen implantation for a lower dose of irradiation with a Co-60 source. Despite the small difference between the doses of nitrogen implantation, the nitrogen-implanted 2 × 1015 cm-2 BOX has a much higher hardness than the control sample (i. e. the buried oxide without receiving nitrogen implantation) for a total-dose irradiation of 5 × 104rad(Si), whereas the nitrogen-implanted 3 × 1015 cm-2 BOX has a lower hardness than the control sample. However,this sensitivity of radiation hardness to the doses of nitrogen implantation reduces with the increasing total-dose of irradiation (from 5 × 104 to 5 × 105 rad (Si)). The radiation hardness of BOX is characterized by MOS high-frequency (HF) capacitance-voltage (C-V) technique after the top silicon layers are removed. In addition, the abnormal HF C-V curve of the metal-silicon-BOX-silicon(MSOS) structure is observed and explained.

Effects of solar ultraviolet radiation on photosynthesis of the marine red tide alga Heterosigma akashiwo (Raphidophyceae)

In order to assess the short- and long-term impacts of UV radiation (LTVR, 280-400 nm) on the red tide alga, Heterosigma akashiwo, we exposed the cells to three different solar radiation treatments (PAB: 280-700 rim, PA: 320-700 nm, R 400-700 nm) under both solar and artificial radiation. A significant decrease in the effective quantum yield () during high irradiance periods (i.e., local noon) was observed, but the cells partially recovered during the evening hours. Exposure to high irradiances for 15, 30, and 60 min under a solar simulator followed by the recovery (8 h) under dark, 9 and 100 mu mol photons m(-2) s(-1) of PAR, highlighted the importance of the irradiance level during the recovery period. Regardless the radiation treatments, the highest recovery (both in rate and total Y) was found at a PAR irradiance of 9 mu mol photons m(-2) s(-1), while the lowest was observed at 100 mu mol photons m(-2) s(-1). In all experiments, PAR was responsible for most of the observed inhibition; nevertheless, the cells exposed only to PAR had the highest recovery in any condition, as compared to the other radiation treatments. In long-term experiments (10 days) using semi-continuous cultures, there was a significant increase of UV-absorbing compounds (UVabc) per cell from 1.2 to > 4 x 10(-6) mu g UVabc cell(-1) during the first 3-5 days of exposure to solar radiation. The highest concentration of UVabc was found in samples exposed in the PAB as compared to PA and P treatments. Growth rates (mu) mimic the behavior of UV-absorbing compounds, and during the first 5 days mu increased from < 0.2 to ca. 0.8, and stayed relatively constant at this value during the rest of the experiment. The inhibition of the Y decreased with increasing acclimation of cells. All our data indicates that H. akashiwo is a sensitive species, but was able acclimate relatively fast (3-5 days) synthesizing UV-absorbing compounds and thus reducing any impact either on photosystem 11 or on growth. (c) 2006 Published by Elsevier B.V.

A novel technique for predicting ionizing radiation effects of commercial MOS devices

A nondestructive selection technique for predicting ionizing radiation effects of commercial metal-oxide-semiconductor (MOS) devices has been put forward. The basic principle and application details of this technique have been discussed. Practical application for the 54HC04 and 54HC08 circuits has shown that the predicted radiation-sensitive parameters such as threshold voltage, static power supply current and radiation failure total dose are consistent with the experimental results obtained only by measuring original electrical parameters. It is important and necessary to choose suitable information parameters. This novel technique can be used for initial radiation selection of some commercial MOS devices.

Radiation hardness improvement of separation-by-implantation-of-oxygen/silicon-on-insulator material by nitrogen ion implantation

In our work, nitrogen ions were implanted into separation-by-implantation-of-oxygen (SIMOX) wafers to improve the radiation hardness of the SIMOX material. The experiments of secondary ion mass spectroscopy (SIMS) analysis showed that some nitrogen ions were distributed in the buried oxide layers and some others were collected at the Si/SiO2 interface after annealing. The results of electron paramagnetic resonance (EPR) suggested the density of the defects in the nitrided samples changed with different nitrogen ion implantation energies. Semiconductor-insulator-semiconductor (SIS) capacitors were made on the materials, and capacitance-voltage (C-V) measurements were carried out to confirm the results. The super total dose radiation tolerance of the materials was verified by the small increase of the drain leakage current of the metal-oxide-semiconductor field effect transistor with n-channel (NMOSFETs) fabricated on the materials before and after total dose irradiation. The optimum implantation energy was also determined.

Improvement of the radiation hardness of SIMOX buried layers using nitrogen implantation

An investigation of hardening the buried oxides (BOX) in separation by implanted oxygen (SIMOX) silicon-on-insulator (SOI) wafers to total-dose irradiation has been made by implanting nitrogen into the BOX layers with a constant dose at different implantation energies. The total-dose radiation hardness of the BOX layers is characterized by the high frequency capacitance-voltage (C-V) technique. The experimental results show that the implantation of nitrogen into the BOX layers can increase the BOX hardness to total-dose irradiation. Particularly, the implantation energy of nitrogen ions plays an important role in improving the radiation hardness of the BOX layers. The optimized implantation energy being used for a nitrogen dose, the hardness of BOX can be considerably improved. In addition, the C-V results show that there are differences between the BOX capacitances due to the different nitrogen implantation energies.

Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOIPMOSFET

The effect of implanting nitrogen into buried oxide on the top gate oxide hardness against total irradiation does has been investigated with three nitrogen implantation doses (8 x 10(15), 2 x 10(16) and 1 x 10(17) cm(-2)) for partially depleted SOI PMOSFET. The experimental results reveal the trend of negative shift of the threshold voltages of the studied transistors with the increase of nitrogen implantation dose before irradiation. After the irradiation with a total dose of 5 x 10(5) rad(Si) under a positive gate voltage of 2V, the threshold voltage shift of the transistors corresponding to the nitrogen implantation dose 8 x 10(15) cm(-2) is smaller than that of the transistors without implantation. However, when the implantation dose reaches 2 x 10(16) and 1 x 10(17) cm(-2), for the majority of the tested transistors, their top gate oxide was badly damaged due to irradiation. In addition, the radiation also causes damage to the body-drain junctions of the transistors with the gate oxide damaged. All the results can be interpreted by tracing back to the nitrogen implantation damage to the crystal lattices in the top silicon.

JFET SOS devices: Processing and gamma radiation effects

A process for fabricating n channel JFET/SOS (junction field-effect transistors on silicon-on-sapphire) has been researched. The gate p(+)n junction was obtained by diffusion, and the conductive channel was gotten by a double ion implantation. Both enhancement and depletion mode transistors were fabricated in different processing conditions. From the results of the Co-50 gamma ray irradiation experimental we found that the devices had a good total dose radiation-hardness. When the tot;ll dose was 5Mrad(Si), their threshold voltages shift was less than 0.1V. The variation of transconductance and the channel leakage current were also little.

Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers

摘要: In order to improve the total-dose radiation hardness of the buried oxide of separation by implanted oxygen silicon-on-insulator wafers, nitrogen ions were implanted into the buried oxide with a dose of 10(16)cm(-2), and subsequent annealing was performed at 1100 degrees C. The effect of annealing time on the radiation hardness of the nitrogen implanted wafers has been studied by the high frequency capacitance-voltage technique. The results suggest that the improvement of the radiation hardness of the wafers can be achieved through a shorter time annealing after nitrogen implantation. The nitrogen-implanted sample with the shortest annealing time 0.5 h shows the highest tolerance to total-dose radiation. In particular, for the 1.0 and 1.5 h annealing samples, both total dose responses were unusual. After 300-krad(Si) irradiation, both the shifts of capacitance-voltage curve reached a maximum, respectively, and then decreased with increasing total dose. In addition, the wafers were analysed by the Fourier transform infrared spectroscopy technique, and some useful results have been obtained.

Radiation-use efficiency and the harvest index of winter wheat at different nitrogen levels and their relationships to canopy spectral reflectance

Radiation-use efficiency (RUE, g/MJ) and the harvest index (HI, unitless) are two helpful characteristics in interpreting crop response to environmental and climatic changes. They are also increasingly important for accurate crop yield simulation, but they are affected by various environmental factors. In this study, the RUE and HI of winter wheat and their relationships to canopy spectral reflectance were investigated based on the massive field measurements of five nitrogen (N) treatments. Crop production can be separated into light interception and RUE. The results indicated that during a long period of slow growth from emergence to regreening, the effect of N on crop production mainly showed up in an increased light interception by the canopy. During the period of rapid growth from regreening to maturity, it was present in both light interception and RUE. The temporal variations of RUEAPAR (aboveground biomass produced per unit of photosynthetically active radiation absorbed by the canopy) during the period from regreening to maturity had different patterns corresponding to the N deficiency, N adequacy and N-excess conditions. Moreover, significant relationships were found between the RUEAPAR and the accumulative normalised difference vegetation index (NDVI) in the integrated season (R-2 = 0.68), between the HI and the accumulative NDVI after anthesis (R-2 = 0.89), and between the RUEgrain (ratio of grain yield to the total amount of photosynthetically active radiation absorbed by the canopy) and the accumulative NDVI of the whole season (R-2 = 0.89) and that after anthesis (R-2 = 0.94). It suggested that canopy spectral reflectance has the potential to reveal the spatial information of the RUEAPAR, HI and RUEgrain. It is hoped that this information will be useful in improving the accuracy of crop yield simulation in large areas.

Strain H-2-419-4 of Haematococcus pluvialis induced by ethyl methanesulphonate and ultraviolet radiation

Two strains H-2-410 and H-2-419 were obtained from the chemically mutated survivors of wild Haematococcus pluvialis 2 by using ethyl methanesulphonate (EMS). Strains H2-410 and H2-419 showed a fast cell growth with 13% and 20% increase in biomass compared to wild type, respectively. Then H-2-419-4, a fast cell growth and high astaxanthin accumulation strain, was obtained by exposing the strain H2-419 to ultraviolet radiation (UV) further. The total biomass, the astaxanthin content per cell, astaxanthin production of H-2-4194 showed 68%, 28%, and 120% increase compared to wild H. pluvialis 2, respectively. HPLC (High Performance Liquid Chromatography) data showed also an obvious proportional variation of different carotenoid compositions in the extracts of H2-4194 and the wild type, although no peak of carotenoids appeared or disappeared. Therefore, the main compositions in strain H-2-419-4, like its wild one, were free of astaxanthin, monoester, and diester of astaxanthin. The asexual reproduction in survivors after exposed to UV was not synchronous, and different from the normal synchronous asexual reproduction as the mother cells were motile instead of non-motile. Interestingly, some survivors from UV irradiation produced many mini-spores (or gamete?), the spores moved away from the mother cell gradually 4 or 5 days later. This is quite similar to sexual reproduction described by Elliot in 1934. However, whether this was sexual reproduction remains questionable, as no mating process has been observed.