Total Dose Radiation-Hard 0. SOI CMOS Transistors and ASIC
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2006
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Resumo |
This paper presents the total dose radiation performance of 0. S^m SOI CMOS devices fabricated with full dose SIMOX technology. The radiation performance is characterized by threshold voltage shifts and leakage currents of transistors and standby currents of ASIC as functions of the total dose up to 500krad(Si) .The experimental results show that the worst case threshold voltage shifts of front channels are less than 320mV for pMOS transistors under off-gate radiation bias at lMrad(Si) and less than 120mV for nMOS transistors under on-gate radiation bias. No significant radiation-induced leakage current is observed in transistors to lMrad(Si). The standby currents of ASIC are less than the specification of 5μA over the total dose range of 500krad(Si). This paper presents the total dose radiation performance of 0. S^m SOI CMOS devices fabricated with full dose SIMOX technology. The radiation performance is characterized by threshold voltage shifts and leakage currents of transistors and standby currents of ASIC as functions of the total dose up to 500krad(Si) .The experimental results show that the worst case threshold voltage shifts of front channels are less than 320mV for pMOS transistors under off-gate radiation bias at lMrad(Si) and less than 120mV for nMOS transistors under on-gate radiation bias. No significant radiation-induced leakage current is observed in transistors to lMrad(Si). The standby currents of ASIC are less than the specification of 5μA over the total dose range of 500krad(Si). 于2010-11-23批量导入 zhangdi于2010-11-23 13:02:57导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-23T05:02:57Z (GMT). No. of bitstreams: 1 4257.pdf: 413720 bytes, checksum: c4fa0cf25f9f4cb74804bd9ed55bb768 (MD5) Previous issue date: 2006 IC Design Center, University of Electronic Science and Technology of China;The. 5&th Research Institute, China Electronics Technology Group Corporation;Institute of Semiconductors, Chinese Academy of Sciences |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Xiao Zhiqiang;Hong Genshen;Zhang Bo;Liu Zhongli.Total Dose Radiation-Hard 0. SOI CMOS Transistors and ASIC,半导体学报,2006,27(10):1750-1754 |
Palavras-Chave | #微电子学 |
Tipo |
期刊论文 |