Abatement of waste gases and water during the processes of semiconductor fabrication

The purpose of this article is to examine the methods and equipment for abating waste gases and water produced during the manufacture of semiconductor materials and devices. Three separating methods and equipment are used to control three different groups of electronic wastes. The first group includes arsine and phosphine emitted during the processes of semiconductor materials manufacture. The abatement procedure for this group of pollutants consists of adding iodates, cupric and manganese salts to a multiple shower tower (MST) structure. The second group includes pollutants containing arsenic, phosphorus, HF, HCl, NO2, and SO3 emitted during the manufacture of semiconductor materials and devices. The abatement procedure involves mixing oxidants and bases in an oval column with a separator in the middle. The third group consists of the ions of As, P and heavy metals contained in the waste water. The abatement procedure includes adding CaCO3 and ferric salts in a flocculation-sedimentation compact device equipment. Test results showed that all waste gases and water after the abatement procedures presented in this article passed the discharge standards set by the State Environmental Protection Administration of China.

Effects of coupling lens on optical refrigeration of semiconductors

Optical refrigeration of semiconductors is encountering efficiency difficulties caused by nonradiative recombination and luminescence trapping. A commonly used approach for enhancing luminescence efficiency of a semiconductor device is coupling a lens with the device. We quantitatively study the effects of a coupling lens on optical refrigeration based on rate equations and photon recycling, and calculated cooling efficiencies of different coupling mechanisms and of different lens materials. A GaAs/GaInP heterostructure coupled with a homo-epitaxial GaInP hemispherical lens is recommended.

Polarization effects simulation of AlGaN/GaN heterojunction by using a symbolistic delta-doping layer

Polarization effects in AlGaN/GaN heterojunction are simulated based on a traditional semiconductor device simulator. A delta doping layer is purposely inserted at the interface of the heterojunction in the simulation, so the ionized donors or acceptors can represent polarization-induced positive or negative fixed charges. The free electron distribution of single AlGaN/GaN heterostructures with Ga-face and N-face growth is compared, and the results of the simulation show that carrier confinement takes place only in the former structure. The dependence of sheet density of free electrons at the interface of Ga-face growth AlGaN/GaN on Al composition and the thickness of AlGaN is also investigated. The consistency of simulation results with the experiments and calculations reported by other researchers shows that this method can be effectively used to deal with the polarization effects in the simulation of GaN-based heterojunction devices. (C) 2004 Elsevier Ltd. All rights reserved.

Improving response speed of electrooptical switch in silicon-on-insulator by modifying modulation area structure

This paper reports on the simulation of two 2 x 2 electrooptical switches with different modulation area structures in silicon-on-insulator (SOI). A two-dimensional (2D) semiconductor device simulation tool PISCES-II has been used to analyze the dc and transient behaviors of the two devices. The modeling results show that the switch with an N+-I-P+-I-N+ modulation structure has a much faster response speed than the device with a P+-I-N+ modulation structure, although the former requires slightly stronger injection power.

The effect of dopant Si on the uniformity of self-organized InAs quantum dots

The photoluminescence in directly si-doped self-organized InAs quantum dots was systematically studied. With doping, a decrease in linewidth and a little blue shift in peak were observed by PL measurement. The results show that direct doping when growing InAs layer may be helpful to the formation of uniform small quantum dots. The work will be meaningful for the fabrication of self-organized InAs quantum dots semiconductor device.

A Radial Stub Test Circuit for Microwave Power Devices

With the principles of microwave circuits and semiconductor device physics, two microwave power device test circuits combined with a test fixture are designed and simulated, whose properties are evaluated by a parameter network analyzer within the frequency range from 3 to 8GHz. The simulation and experimental results verify that the test circuit with a radial stub is better than that without. As an example, a C-band AlGaN/GaN HEMT microwave power device is tested with the designed circuit and fixture. With a 5.4GHz microwave input signal, the maximum gain is 8.75dB, and the maximum output power is 33.2dBm.

High-speed electrooptical VOA integrated in silicon-on-insulator

In this paper, we present simulation results of an electrooptical variable optical attenuator (VOA) inte-grated in silicon-on-insulator waveguide. The device is functionally based on free carriers absorption toachieve attenuation. Beam propagation method (BPM) and two-dimensional semiconductor device simu-lation tool PISCES-Ⅱ were used to analyze the dc and transient characteristics of the device. The devicehas a response time (including rise time and fall time) less than 200 ns, much faster than the thermoopticand micro-electromechanical systems (MEMSs) based VOAs.

利用HIRFL评估半导体器件单粒子效应敏感度的研究

用55MeV/u的~(40)Ar，离子对国内第一台专用的单粒子效应加速器模拟实验装置的注时探测器、能量探测器以及均匀度探测器进行了刻度。利用高能~(136)Xe离子获得了静态存储器IDT71256的单粒子翻转饱和截面和单粒子闭锁截面，在国内首次得到了该器件完整的G一LET曲线。并用改进的FONT方法预示了该器件以及其它常用宇航器件的在轨翻转率；用FOM公式、Barak经验公式和Lar叮模型推算这些器件的质子饱爪佩截而，少一仁对二种方法推算的结果进行了比较；探讨了利用HIRFL提供的高能~(12)C离子来模拟质子引起的单粒子效应的可能性；利用翻转截面与离子入射角度的关系估算了IDT71256敏感区的厚度以及聚酞亚胺膜的厚度，获得了截面与离子沉积能量的关系，临界沉积能量与临界LET值吻合，聚酞亚胺膜的厚度与对同类器件测量的结果一致；研究了离子入射角度对多位翻转的影响，在高LET值轰击下以及高能离子掠射的情况下，IDT71256多位翻转的比例可以高达70％，对于MBU敏感区中沉积的总能量及其分布范围是两个重要的参数；IDT71256单粒子翻转截面的角度效应主要是多位翻转的贡献；对实验中各种误差来源进行了分析。部分研究结果己经应用于星载七卜算机系统的抗辐射加固设计，建立的实验方法和理论模型为利用HIRFL开展宇航器件单粒子效应敏感度的评估奠定了坚实的基础。

Multiple valley couplings in nanometer Si metal-oxide-semiconductor field-effect transistors

We investigate the couplings between different energy band valleys in a metal-oxide-semiconductor field-effect transistor (MOSFET) device using self-consistent calculations of million-atom Schrodinger-Poisson equations. Atomistic empirical pseudopotentials are used to describe the device Hamiltonian and the underlying bulk band structure. The MOSFET device is under nonequilibrium condition with a source-drain bias up to 2 V and a gate potential close to the threshold potential. We find that all the intervalley couplings are small, with the coupling constants less than 3 meV. As a result, the system eigenstates derived from different bulk valleys can be calculated separately. This will significantly reduce the simulation time because the diagonalization of the Hamiltonian matrix scales as the third power of the total number of basis functions. (C) 2008 American Institute of Physics.

Numerical analysis of gain saturation, noise figure, and carrier distribution for quantum-dot semiconductor-optical amplifiers

The gain saturation behaviors and noise figure are numerically analyzed for quantum-dot semiconductor optical amplifiers (QD-SOAs). The carrier and photon distributions in the longitudinal direction as well as the photon energy dependent facet reflectivity are accounted in the rate equations, which are solved with output amplified spontaneous emission spectrum as iterative variables. The longitudinal distributions of the occupation probabilities and spectral-hole burning are presented for electrons in the excited and ground states of quantum dots. The saturation output power 19.7 dBm and device gain 20.6 dB are obtained for a QD-SOA with the cavity length of 6 rum at the bias current of 500 mA. The influences of them electron intradot relaxation time and the QD capture time on the gain spectrum are simulated with the relaxation time of 1, 30, and 60 ps and capture time of 1, 5, and 10 ps. The noise figure as low as 3.5 dB is expected due to the strong polarization sensitive spontaneous emission. The characteristics of gain saturation and noise figure versus input signal power for QD-SOAs are similar to that of semiconductor. linear optical amplifiers with gain clamping by vertical laser fields.

GaSb based midinfrared equilateral-triangle-resonator semiconductor lasers

Theoretical calculations of the mode characteristics of an equilateral-triangle resonator (ETR) with a 10 mu m cavity side length show that the fundamental mode, with longitudinal mode index of 25, has a wavelength of 2.185 mu m and a longitudinal mode separation of 100 nm. This mode has a quality factor (similar to 2x10(5)) that is much larger than the first (similar to 5x10(4)) and second (similar to 3x10(4)) order modes, indicating that single fundamental mode lasing should be accessible over a broad wavelength tuning range. An electrically injected ETR based on this design is fabricated from an InGaAsSb/AlGaAsSb/GaSb, graded-index separate-confinement heterostructure, laser diode wafer with a 2.1 mu m emission wavelength. This device achieved single mode, continuous wave operation at 77 K with a threshold current of 0.5 mA and a single mode wavelength tuning range of 3.25 nm, which is accomplished by varying the injection current from 0.5 to 6.0 mA. (C) 2008 American Vacuum Society.

Diode-pumped self-starting mode-locked Nd : YVO4 laser with semiconductor saturable absorber output coupler

By using a semiconductor saturable-absorber output coupler as a mode-locking device, we experimentally realized the operation of a diode-pumped passively mode-locked Nd:YVO4 laser. Stable laser pulses with duration of 2.3 ps were generated at the output power of about 1 W. With increasing the pump power to 9 W, the maximum mode-locked power of 1.7 W was obtained, which corresponds to a slope conversion efficiency of 44% and optical-to-optical conversion efficiency of 19%.

MOVPE growth of grade-strained bulk InGaAs/InP for broad-band optoelectronic device applications

In this paper we present a novel growth of grade-strained bulk InGaAs/InP by linearly changing group-III TMGa source flow during low-pressure metalorganic vapor-phase epitaxy (LP-MOVPE). The high-resolution X-ray diffraction (HRXRD) measurements showed that much different strain was simultaneously introduced into the fabricated bulk InGaAs/InP by utilizing this novel growth method. We experimentally demonstrated the utility and simplicity of the growth method by fabricating common laser diodes. As a first step, under the injection current of 100 mA, a more flat gain curve which has a spectral full-width at half-maximum (FWHM) of about 120 nm was achieved by using the presented growth technique. Our experimental results show that the simple and new growth method is very suitable for fabricating broad-band semiconductor optoelectronic devices. (C) 2003 Elsevier B.V. All rights reserved.

Monolithically integrated semiconductor optical amplifier and electroabsorption modulator with dual-waveguide spot-size converter input and output

We have demonstrated an electroabsorption modulator and semiconductor optical amplifier monolithically integrated with novel dual-waveguide spot-size converters (SSC) at the input and output ports for low-loss coupling to a planar light-guide circuit silica waveguide or cleaved single-mode optical fibre. The device was fabricated by means of selective-area MOVPE growth, quantum well intermixing and asymmetric twin waveguide technologies with only a three-step low-pressure MOVPE growth. For the device structure, in the SOA/EAM section, a double ridge structure was employed to reduce the EAM capacitances and enable high bit-rate operation. In the SSC sections, buried ridge structure (BRS) was incorporated. Such a combination of ridge, ATG and BRS structure is reported for the first time in which it can take advantage of easy processing of the ridge structure and the excellent mode characteristic of BRS. At the wavelength range of 1550-1600 nm, lossless operation with extinction ratios of 25 dB dc and more than 10 GHz 3 dB bandwidth is successfully achieved, The beam divergence angles of the input and output ports of the device are as small as 8.0 degrees x 12.6 degrees, resulting in 3.0 dB coupling loss with a cleaved single-mode optical fibre.