Improving response speed of electrooptical switch in silicon-on-insulator by modifying modulation area structure
Data(s) |
2003
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Resumo |
This paper reports on the simulation of two 2 x 2 electrooptical switches with different modulation area structures in silicon-on-insulator (SOI). A two-dimensional (2D) semiconductor device simulation tool PISCES-II has been used to analyze the dc and transient behaviors of the two devices. The modeling results show that the switch with an N+-I-P+-I-N+ modulation structure has a much faster response speed than the device with a P+-I-N+ modulation structure, although the former requires slightly stronger injection power. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Yan QF; Yu JZ .Improving response speed of electrooptical switch in silicon-on-insulator by modifying modulation area structure ,JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,2003,42 (7A):4361-4362 |
Palavras-Chave | #半导体物理 #electrooptical switch #silicon-on-insulator #modulation area structure #plasma dispersion effect #integrated opotoelectronics #WAVE-GUIDE #DEVICES |
Tipo |
期刊论文 |