Optical interconnection for neural networks by use of a self-imaging function

A grating-lens combination unit is developed to form a scaling self-transform function that can self-image on scale. Then an array of many such grating-lens units is used for the optical interconnection of a two-dimensional neural network, and experiments are carried out. We find that our idea is feasible, the optical interconnection system is simple, and optical adjustment is easy. (C) 1998 Optical Society of America.

Electromagnetically induced self-imaging

We study the self-imaging and image-transforming properties of a probe field in a cold atomic medium with electromagnetically induced transparency (EIT). Due to the similarities between the gradient-index medium and the inhomogeneous index distribution of an EIT medium under the conditions of a negative probe detuning and a Gaussian control field, we find based on analytical investigations that there exists a kind of electromagnetically induced self-imaging phenomenon in cold atomic media. Numerical simulations clearly show that electromagnetically induced self-imaging is observable and controllable. (c) 2007 Optical Society of America.

Structural and optical properties of InAs/In0.52Al0.48As self-assembled quantum wires on InP(001)

Six-stacked InAs/In0.52Al0.48As self-assembled quantum wires (QWRs) on InP(001) by molecular-beam epitaxy (MBE) have been studied by high-resolution transmission electron microscopy (HRTEM) and polarized PL measurements. We obtained the chemical lattice fringe (CLF) image of InAs self-assembled QWRs embedded in the In0.52Al0.48As matrix by the interference between the (002)-diffracted beam and the transmitted beam in the image plane of the objective lens. The results show that the InAs QWRs were bounded by (113), (001) and (114) facets. Both the size and strain distribution in QWRs were determined. It was found that with the growth of successive periods, the height and height fluctuation of InAs QWRs decreased from the bottom period to the upper one. Some suggestions are put forward for further improving the uniformity of the stacked InAs QWRs. (c) 2005 Elsevier B.V. All rights reserved.

Self-assembling of submicrometer three-dimensional photonic crystals in concave microzones etched on silicon substrates

By vertical sedimentation and oblique titration, silica microspheres were grown in different shapes of concave microzones that were etched on a (100) p-silicon substrate. Through scanning electron microscope observation and optical reflective spectra measurement, sedimentation of microspheres in those microzones was compared. An index was introduced to judge the efficiency of sedimentation. The comparison demonstrates that regular hexagons and triangles facilitate the growth of photonic crystals the most. (c) 2006 Optical Society of America

Photoluminescence study of InAs/GaAs self-organized quantum dots with bimodal size distribution

We have investigated the temperature dependence of the photoluminescence (PL) spectrum of self-organized InAs/GaAs quantum dots. A distinctive double-peak feature of the PL spectra from quantum dots has been observed, and a bimodal distribution of dot sizes has also been confirmed by scanning tunneling microscopy image for uncapped sample. The power-dependent PL study demonstrates that the distinctive PL emission peaks are associated with the ground-state emission of islands in different size branches. The temperature-dependent PL study shows that the PL quenching temperature for different dot families is different. Due to lacking of the couple between quantum dots, an unusual temperature dependence of the linewidth and peak energy of the dot ensemble photoluminescence has not been observed. In addition, we have tuned the emission wavelength of InAs QDs to 1.3 mu m at room temperature.

Pressure behaviour of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots with multi-modal distribution in size

The pressure behaviour of In0.55Al0.45As/Al0.5Ga0.5As self-assembled quantum dots (QDs) has been studied at 15 K in the pressure range of 0-1.3 GPa. The atomic force microscopy image shows that the QDs have a multi-modal distribution in size. Three emission peaks were observed in the photoluminescence (PL) spectra, corresponding to the different QD families. The measured pressure coefficients are 82, 93 and 98 meV GPa(-1) for QDs with average lateral size of 26, 52 and 62 nm, respectively. The pressure coefficient of small QDs is about 17% smaller than that of bulk In0.55Al0.45As An envelope-function calculation was used to analyse the effect of pressure-induced change of barrier height, effective mass and dot size on the pressure coefficients of QDs. The Gamma-X state mixing was also included in the evaluation of the reduction of the pressure coefficients. The results indicate that both the pressure-induced increase of effective mass and Gamma-X mixing respond to the decrease of pressure coefficients, and the Gamma-X mixing is more important for small dots. The calculated Gamma-X interaction potentials are 15 and 10 meV for QDs with lateral size of 26 and 52 nm, respectively. A type-II alignment for the X conduction band is suggested according to the pressure dependence of the PL intensities. The valence-band offset was then estimated as 0.15 +/- 0.02.

Temperature dependence of the optical properties of InAs/GaAs self-organized quantum dots with bimodal size distribution

In this work we report the optical and microscopic properties of self-organized InAs/GaAs quantum dots grown by molecular beam epitaxy on (1 0 0) oriented GaAs substrates. A distinctive double-peak feature of the PL spectra from quantum dots has been observed, and a bimodal distribution of dot sizes has also been confirmed by scanning tunneling microscopy (STM) image for uncapped sample. The power-dependent photoluminescence (PL) study demonstrates that the distinctive PL emission peaks are associated with the ground-state emission of islands in different size branches. The temperature-dependent PL study shows that the PL quenching temperature for different dot families is different. It is shown that the coupling between quantum dots plays a key role in unusual temperature dependence of QD photoluminescence. In addition, we have tuned the emission wavelength of InAs QDs to 1.3 mu m at room temperature. (C) 2000 Elsevier Science B.V. All rights reserved.

Red luminescence from self-assembled InAlAs AlGaAs quantum dots with bimodal size distribution

Red-emitting at about 640 nm from self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on GaAs substrate by molecular beam epitaxy are demonstrated, A double-peak structure of photoluminescence (PL) spectra from quantum dots was observed, and a bimodal distribution of dot sizes was also confirmed by an atomic force micrograph (AFM) image for uncapped sample. From the temperature and excitation intensity dependence of PL spectra, it is found that the double-peak structure of PL spectra from quantum dots is strongly correlated to the two predominant quantum dot families. Taking into account the quantum-size effect on the peak energy, it is proposed that the high (low) energy peak results from a smaller (larger) dot family, and this result is identical to the statistical distribution of dot lateral size from the AFM image.

Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001)

Red-emission at similar to 640 nm from self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on GaAs substrate by molecular beam epitaxy (MBE) has been demonstrated. We obtained a double-peak structure of photoluminescence (PL) spectra from quantum dots. An atomic force micrograph (AFM) image for uncapped sample also shows a bimodal distribution of dot sizes. From the temperature and excitation intensity dependence of PL spectra, we found that the double-peak structure of PL spectra from quantum dots was strongly correlated to the two predominant quantum dot families. Taking into account quantum-size effect on the peak energy, we propose that the high (low) energy peak results from a smaller (larger) dot family, and this result is identical with the statistical distribution of dot lateral size from the AFM image.

Structural and optical characteristics of self-organized InAs quantum dots grown on GaAs (3 1 1)A substrates

Structural and optical investigations of InAs QDs grown on GaAs (3 1 1)A by molecular beam epitaxy (MBE) were reported. InAs/GaAs (3 1 1)A QDs with nonconventional, faceted, arrowhead-like shapes aligned in the [ - 2 3 3] direction have been disclosed by AFM image. Low defect and dislocation density on the QDs interfaces were indicated by the linear dependence of photoluminescence (PL) intensity on the excitation power. The fast red shift of PL energy and the monotonic decrease of FWHM with increasing temperature were observed and explained by carriers being thermally activated to the energy barrier produced by the wetting layer and then retrapped and recombined in energetically low-lying QDs states. (C) 1999 Elsevier Science B.V. All rights reserved.

Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001)

Red-emission at similar to 640 nm from self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on GaAs substrate by molecular beam epitaxy (MBE) has been demonstrated. We obtained a double-peak structure of photoluminescence (PL) spectra from quantum dots. An atomic force micrograph (AFM) image for uncapped sample also shows a bimodal distribution of dot sizes. From the temperature and excitation intensity dependence of PL spectra, we found that the double-peak structure of PL spectra from quantum dots was strongly correlated to the two predominant quantum dot families. Taking into account quantum-size effect on the peak energy, we propose that the high (low) energy peak results from a smaller (larger) dot family, and this result is identical with the statistical distribution of dot lateral size from the AFM image.

Self-assembled monolayer growth of octanol on mica: Atomic force microscopy and Fourier-transform infrared spectroscopy studies

The growth kinetics of self-assembled monolayers formed by exposing freshly cleaved mica to octanol solution has been studied by atomic force microscopy (AFM) and Fourier-transform infrared spectroscopy (FTIR). AFM images of samples immersed in octanol for varying exposure times showed that before forming a complete monolayer the octanol molecules aggregated in the form of small islands on the mica surface. With the proceeding of immersion, these islands gradually grew and merged into larger patches. Finally, a close-packed film with uniform appearance and few defects was formed. The thickness of the final film showed 0.8 nm in height, which corresponded to the 40degrees tilt molecular conformation of the octanol monolayer. The growth mechanisms consisted of nucleation, growth, and coalescence of the submonolayer films. The growth process was also confirmed by FTIR. And the surface coverage of the submonolayer islands estimated from AFM images and FTIR spectra as a function of immersion time was quite consistent.

Layer-by-layer multilayer films self-assembled from a rare-earth-containing poly-oxometalate Na-9[Eu(W5O18)(2)] and poly (allylamine hydrochloride) and their photoluminescent properties

Ultrathin multilayer films of a rare-earth-containing polyoxometalate Na-9[Eu(W5O18)(2)] (EW) and Poly (allyamine hydrochloride) (PAH) have been prepared by layer-by-layer self-assembly from dilute aqueous solutions. The fabrication process of the EW/PAH multilayer films was followed by UV-vis spectroscopy and ellipsometry, which show that the deposition process is linear and highly reproducible from layer to layer. An average EW/PAH bilayer thickness of ca. 2.1 nm was determine,by ellipsometry. In addition, the scanning electron microscopy (SEM) image of the EW/PAH film indicates that the film sufface is relatively uniform and smooth. The photoluminescent properties of these films were also investigated by fluoresence spectroscopy.

Self-assembled monolayer of polyoxometalate on gold surfaces: Quartz crystal microbalance, electrochemistry, and in-situ scanning tunneling microscopy study

A new kind of inorganic self-assembled monolayer (SAM) was prepared by spontaneous adsorption of polyoxometalate anion, AsMo11VO404-, onto a gold surface from acidic aqueous solution. The adsorption process, structure, and electrochemical properties of the AsMo11VO404- SAM were investigated by quartz crystal microbalance (QCM), electrochemistry, and scanning tunneling microscopy (STM). The QCM data suggested that the self-assembling process could be described in terms of the Langmuir adsorption model, providing the value of the free energy of adsorption at -20 KJ mol(-1). The maximum surface coverage of the AsMo11VO404- SAM on gold surface was determined from the QCM data to be 1.7 x 10(-10) mol cm(-2), corresponding to a close-packed monolayer of AsMo11VO404- anion. The analysis of the voltammograms of the AsMo11VO404- SAM on gold electrode showed three pairs of reversible peaks with an equal surface coverage of 1.78 x 10(-10) mol cm(-2) for each of the peaks, and the value was agreed well with the QCM data. In-situ STM image demonstrated that the AsMo11VO404- SAM was very uniform and no aggregates or multilayer could be observed. Furthermore, the high-resolution STM images revealed that the AsMo11VO404- SAM on Au(lll) surface was composed of square unit cells with a lattice space of 10-11 Angstrom at +0.7 V (vs Ag\AgCl). The value was quite close to the diameter of AsMo11VO404- anion obtained from X-ray crystallographic study. The surface coverage of the AsMo11VO404- SAM on gold electrode estimated from the STM image was around 1.8 x 10(-10) mol cm(-2), which was consistent with the QCM and electrochemical results.