Photoluminescence study of InAs/GaAs self-organized quantum dots with bimodal size distribution


Autoria(s): Guo ZS; Wang HL; Ning D; Feng SL
Data(s)

2000

Resumo

We have investigated the temperature dependence of the photoluminescence (PL) spectrum of self-organized InAs/GaAs quantum dots. A distinctive double-peak feature of the PL spectra from quantum dots has been observed, and a bimodal distribution of dot sizes has also been confirmed by scanning tunneling microscopy image for uncapped sample. The power-dependent PL study demonstrates that the distinctive PL emission peaks are associated with the ground-state emission of islands in different size branches. The temperature-dependent PL study shows that the PL quenching temperature for different dot families is different. Due to lacking of the couple between quantum dots, an unusual temperature dependence of the linewidth and peak energy of the dot ensemble photoluminescence has not been observed. In addition, we have tuned the emission wavelength of InAs QDs to 1.3 mu m at room temperature.

Identificador

http://ir.semi.ac.cn/handle/172111/12614

http://www.irgrid.ac.cn/handle/1471x/65277

Idioma(s)

英语

Fonte

Guo ZS; Wang HL; Ning D; Feng SL .Photoluminescence study of InAs/GaAs self-organized quantum dots with bimodal size distribution ,CHINESE PHYSICS,2000,9(5):384-388

Palavras-Chave #半导体物理 #MOLECULAR-BEAM EPITAXY #ELECTRONIC-STRUCTURE #TEMPERATURE-DEPENDENCE #CARRIER RELAXATION #GROWTH
Tipo

期刊论文