Sub-nanosecond silicon-on-insulator optical micro-ring switch with low crosstalk

We demonstrate a sub-nanosecond electro-optical switch with low crosstalk in a silicon-on-insulator (SOI) dual-coupled micro-ring embedded with p-i-n diodes. A crosstalk of -23 dB is obtained in the 20-mu m-radius micro-ring with the well-designing asymmetric dual-coupling structure. By optimizations of the doping profiles and the fabrication processes, the sub-nanosecond switch-on/off time of < 400 ps is finally realized under an electrical pre-emphasized driving signal. This compact and fast-response micro-ring switch, which can be fabricated by complementary metal oxide semiconductor (CMOS) compatible technologies, have enormous potential in optical interconnects of multicore networks-on-chip.

Monolithic Integration of Light Emitting Diodes, Photodetector and Receiver Circuit in Standard CMOS Technology

A monolithic silicon CMOS optoelectronic integrated circuit (OEIC) is designed and fabricated with standard 0.35 mu m CMOS technology. This OEIC circuit consists of light emitting diodes (LED), silicon dioxide waveguide, photodiodes and receiver circuit. The silicon LED operates in reverse breakdown mode and can be turned on at 8.5V 10mA. The silicon dioxide waveguide is composed of multiple layers of silicon dioxide between different metals layers. A two PN-junctions photodetector composed of n-well/p-substrate junction and p(+) active implantation/n-well junction maximizes the depletion region width. The readout circuitry in pixels is exploited to handle as small as 0.1nA photocurrent. Simulation and testing results show that the optical emissions powers are about two orders higher than the low frequency detectivity of silicon CMOS photodetcctor and receiver circuit.

Net-like Ferromagnetic Mnsb Film Deposited on Porous Silicon Substrates

MnSb films were deposited on porous silicon substrates by physical vapor deposition (PVD) technique. Modulation effects due to the substrate on microstructure and magnetic properties of the MnSb film's were studied by scanning electron microscope (SEM), X-ray diffraction (XRD) and measurements of hysteresis loops. SEM images of the MnSb films indicate that net-like structures were obtained because of the special morphology of the substrates. The net-like MnSb films exhibit some novel magnetic properties different from the unpatterned referenced samples. For example, in the case of net-like morphology, the coercive field is as low as 60 Oe.

Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization

Silicon carbide bulk crystals were grown in an induction-heating furnace using the physical vapor transport method. Crystal growth modeling was performed to obtain the required inert gas pressure and temperatures for sufficiently large growth rates. The SiC crystals were expanded by designing a growth chamber having a positive temperature gradient along the growth interface. The obtained 6H-SiC crystals were cut into wafers and characterized by Raman scattering spectroscopy and X-ray diffraction, and the results showed that most parts of the crystals had good crystallographic structures.

Friction and Wear Studies of Octadecyltrichlorosilane SAM on Silicon

A self-assembled monolayer of octadecyltrichlorosilane (OTS) was prepared on a single-crystal silicon wafer (111) and its tribological properties were examined with a one-way reciprocating tribometer. The worn surfaces and transfer film on the counterface were analyzed by means of scanning electron microscopy and X-ray photoelectron spectroscopy. The results show that, due to the wear of the OTS monolayer and the formation of the transfer film on the counterpart ball, the friction coefficient gradually increases from 0.06 to 0.13 with increasing sliding cycles and then keeps stable at a normal load of 0.5N. The transfer film is characterized by deposition, accumulation, and spalling at extended test duration. Though low friction coefficients of the monolayer in sliding against steel or ceramic counterfaces are recorded, poor load-carrying capacity and antiwear ability are also shown. Moreover, the monolayer itself or the corresponding transfer film on the counterface fails to lubricate even at a normal load of 1.0 N. Thus, the self-assembled monolayer of octadecyltrichlorosilane can be a potential boundary lubricant only at very low loads.

Preparation and Tribological Studies of Stearic Acid Self-Assembled Monolayers on Polymer-Coated Silicon Surface

We present a good alternative method to improve the tribological properties of polymer films by chemisorbing a long-chain monolayer on the functional polymer surface. Thus, a novel self-assembled monolayer is successfully prepared on a silicon substrate coated with amino-group-containing polyethyleneimine (PEI) by the chemical adsorption of stearic acid (STA) molecules. The formation and structure of the STA-PEI film are characterized by means of contact-angle measurement and ellipsometric thickness measurement, and of Fourier transformation infrared spectrometric and atomic force microscopic analyses. The micro- and macro-tribological properties of the STA-PEI film are investigated on an atomic force microscope (AFM) and a unidirectional tribometer, respectively. It has been found that the STA monolayer about 2.1-nm thick is produced on the PEI coating by the chemical reaction between the amino groups in the PEI and the carboxyl group in the STA molecules to form a covalent amide bond in the presence of N,N'-dicyclohexylcarbodiimide (DCCD) as a dehydrating regent. By introducing the STA monolayer, the hydrophilic PEI polymer surface becomes hydrophobic with a water contact angle to be about 105degrees. Study of the time dependence of the film formation shows that the adsorption of PEI is fast, whereas at least 24 h is needed to generate the saturated STA monolayer. Whereas the PEI coating has relatively high adhesion, friction, and poor anti-wear ability, the STA-PEI film possesses good adhesive resistance and high load-carrying capacity and anti-wear ability, which could be attributed to the chemical structure of the STA-PEI thin film. It is assumed that the hydrogen bonds between the molecules of the STA-PEI film act to stabilize the film and can be restored after breaking during sliding. Thus, the self-assembled STA-PEI thin film might find promising application in the lubrication of micro-electromechanical systems (MEMS).

Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals

The physical vapor transport (PVT) method is being widely used to grow large-size single SiC crystals. The growth process is associated with heat and mass transport in the growth chamber, chemical reactions among multiple species as well as phase change at the crystal/gas interface. The current paper aims at studying and verifying the transport mechanism and growth kinetics model by demonstrating the flow field and species concentration distribution in the growth system. We have developed a coupled model, which takes into account the mass transport and growth kinetics. Numerical simulation is carried out by employing an in-house developed software based on finite volume method. The results calculated are in good agreement with the experimental observation.

Feasibility of Protein a for the Oriented Immobilization of Immunoglobulin on Silicon Surface for a Biosensor with Imaging Ellipsometry

The feasibility of using protein A to immobilize antibody on silicon surface for a biosensor with imaging ellipsometry was presented in this study. The amount of human IgG bound with anti-IgG immobilized by the protein A on silicon surface was much more than that bound with anti-IgG immobilized by physical adsorption. The result indicated that the protein A could be used to immobilize antibody molecules in a highly oriented manner and maintain antibody molecular functional configuration on the silicon surface. High reproducibility of the amount of antibody immobilization and homogenous antibody adsorption layer on surfaces could be obtained by this immobilization method. Imaging ellipsometry has been proven to be a fast and reliable detection method and sensitive enough to detect small changes in a molecular monolayer level. The combination of imaging ellipsometry and surface modification with protein A has the potential to be further developed into an efficient immunoassay protein chip.

Study of the Adsorption of Fibrinogen on Gold-Coated Silicon Wafer by an Impedance Method

In 0.1 mol/l KH2PO4–Na2HPO4 (pH 7.80) buffer solution, the potential of zero charge (PZC) and the open circuit potential of gold-coated silicon were determined to be about −0.6 and +0.10 V (vs SCE), respectively. The open circuit potential was higher than the PZC, which indicated that the surface of the gold-coated electrode had a positive charge. The ellipsometry experiment showed that the adsorption of fibrinogen onto the gold-coated silicon wafer surface arrived at a saturated state when the adsorption time exceeded 50 min. The percentage of surface without adsorbed protein, θ, was about 63%. This means that the proportion of surface actually occupied by fibrinogen was only about 37% after the adsorption arrived at saturation. The solution/protein capacitance value was determined in an impulse state around −0.59 V (vs SCE) and was stable (4.2×10−5 F) at other potentials.

Refractive index and thickness analysis of natural silicon dioxide film growing on silicon with variable-angle spectroscopic ellipsometry

The refractive index and thickness of SiO2 thin films naturally grown on Si substrates were determined simultaneously within the wavelength range of 220-1100 nm with variable-angle spectroscopic ellipsometry. Different angles of incidence and wavelength ranges were chosen to enhance the analysis sensitivity for more accurate results. Several optical models describing the practical SiO2-Si system were investigated, and best results were obtained with the optical model, including an interface layer between SiO2 and Si, which proved the existence of the interface layer in this work as described in other publications.

Silicon Surface Modification with a Mixed Silanes Layer to Immobilize Proteins for Biosensor with Imaging Ellipsometry

One kind of surface modification method on silicon wafer was presented in this paper. A mixed silanes layer was used to modify silicon surface and rendered the surface medium hydrophobic. The mixed silanes layer contained two kinds of compounds, aminopropyltriethoxysilane (APTES) and methyltriethoxysilane (NITES). A few of APTES molecules in the layer was used to immobilize covalently human immunoglobulin G (IgG) on the silicon surface. The human IgG molecules immobilized covalently on the modified surface could retain their structures well and bind more antibody molecules than that on silicon surface modified with only APTES. This kind of surface modification method effectively improved the sensitivity of the biosensor with imaging ellipsometry.

A Molecular Dynamics Simulation: the Effect of Finite Size on the Thermal Conductivity in a Single Crystal Silicon

Non-equilibrium molecular dynamics (NEMD) simulations are performed to calculate thermal conductivity. The environment-dependent interatomic potential (EDIP) potential on crystal silicon is adopted as a model system. The issues are related to nonlinear response, local thermal equilibrium and statistical averaging. The simulation results by non-equilibrium molecular dynamics show that the calculated thermal conductivity decreases almost linearly as the film thickness reduced at the nanometre scale. The effect of size on the thermal conductivity is also obtained by a theoretic analysis of the kinetic theory and formulas of the heat capacity. The analysis reveals that the contributions of phonon mean free path (MFP) and phonon number in a finite cell to thermal conductivity are very important.

Md Simulation Of Dislocation Mobility During Cutting With Diamond Tip On Silicon

By means of Tersoff and Morse potentials, a three-dimensional molecular dynamics simulation is performed to study atomic force microscopy cutting on silicon monocrystal surface. The interatomic forces between the workpiece and the pin tool and the atoms of workpiece themselves are simulated. Two partial edge dislocations are introduced into workpiece Si, it is found that the motion of dislocations does not occur during the atomic force microscopy cutting processing. Simulation results show that the shear stress acting on dislocations is far below the yield strength of Si. (c) 2008 Elsevier Ltd. All rights reserved.

Formation Of Dendritic Nanostructures In Pyrex Glass Anodically Bonded To Silicon Coated With An Aluminum Thin Film

Anodic bonding with thin films of metal or alloy as an intermediate layer, finds increasing applications in micro/nanoelectromechanical systems. At the bonding temperature of 350 degrees C, voltage of 400 V, and 30 min duration, the anodic bonding is completed between Pyrex glass and crystalline silicon coated with an aluminum thin film with a thickness comprised between 50 and 230 nm. Sodium-depleted layers and dendritic nanostructures were observed in Pyrex 7740 glass adjacent to the bonding interface. The sodium depletion width does not increase remarkably with the thickness of aluminum film. The dendritic nanostructures result from aluminum diffusion into the Pyrex glass. This experimental research is expected to enhance the understanding of how the depletion layer and dendritic nanostructures affect the quality of anodic bonding. (C) 2007 Elsevier B.V. All rights reserved.