Oxygen Carrier Based on Hemoglobin/Poly(L-lysine)-block-poly(L-phenylalanine) Vesicles

An oxygen carrier was prepared by encapsulating carbonylated hemoglobin (CO-Hb) molecules into polypeptide vesicles made from poly(L-lysine)-block-poly(L-phenylalanine) (PLL-b-PPA) diblock copolymers in aqueous medium at pH 5.8. The encapsulation was confirmed by confocal laser scanning microscopy (CLSM). The morphology and size of the Vesicles were studied by field-emission scanning electron microscopy (ESEM). They had a spherical shape with it mean diameter of about 4 to 5 mu m. The encapsulation efficiency of hemoglobin was 40 wt %, and the hemoglobin content in the vesicles was 32 wt %. The CO-Hb encapsulated in the PLL-b-PPA vesicles was more stable than free CO-Hb under ambient conditions, In the presence of a O-2 atmosphere, the CO-Hb in the vesicle could be converted into oxygen-binding hemoglobin (O-2-Hb) under irradiation of visible light for 2 h. Therefore, the CO-Hb/PLL-b-PPA vesicles are expected to be used its red blood cell substitutes.

Synthesis Gas Generation by Chemical-Looping Reforming Using Ce-Based Oxygen Carriers Modified with Fe, Cu, and Mn Oxides

Chemical-looping reforming (CLR) is a technology that can be used for partial oxidation and steam reforming of hydrocarbon fuels. It involves the use of a metal oxide as an oxygen carrier, which transfers oxygen from combustion air to the fuel. Composite oxygen carriers of cerium oxide added with Fe, Cu, and Mn oxides were prepared by co-precipitation and investigated in a thermogravimetric analyzer and a fixed-bed reactor using methane as fuel and air as oxidizing gas. It was revealed that the addition of transition-metal oxides into cerium oxide can improve the reactivity of the Ce-based oxygen carrier. The three kinds of mixed oxides showed high CO and H-2 selectivity at above 800 degrees C. As for the Ce-Fe-O oxygen carrier, methane was converted to synthesis gas at a H-2/CO molar ratio close to 2:1 at a temperature of 800-900 degrees C; however, the methane thermolysis reaction was found on Ce-Cu-O and Ce-Mn-O oxygen carriers at 850-900 degrees C. Among the three kinds of oxygen carriers, Ce-Fe-O presented the best performance for methane CLR. On Ce-Fe-O oxygen carriers, the CO and H-2 selectivity decreased as the Fe content increased in the carrier particles. An optimal range of the Ce/Fe molar ratio is Ce/Fe > 1 for Ce-Fe-O oxygen carriers. Scanning electron microscopy (SEM) analysis revealed that the microstructure of the Ce-Fe-O oxides was not dramatically changed before and after 20 cyclic reactions. A small amount of Fe3C was found in the reacted Ce-Fe-O oxides by X-ray diffraction (XRD) analysis.

Hemoglobin conjugated micelles based on triblock biodegradable polymers as artificial oxygen carriers

An artificial oxygen carrier is constructed by conjugating hemoglobin molecules to biodegradable micelles. Firstly a series of triblock copolymers (PEG-PMPC-PLA) in which the middle block contains pendant propargyl groups were synthesized and characterized. After the amphiphilic copolymer was self-assembled into core-shell micelles in aqueous solution, azidized hemoglobin molecules protected by carbon monoxide (CO) were conjugated to the micelles via click reaction between the propargyl and azido groups. The conjugation causes an increase of the micelle's mean diameter. Maximum conjugation ratio is 250 wt% in the hemoglobin-conjugated micelles (HCMs). Oxygen-binding ability of the HCMs was demonstrated by converting the CO-binding state of the HCMs into O-2-binding state.

Origin of insulating behavior of the p-type LaAlO3/SrTiO3 interface: Polarization-induced asymmetric distribution of oxygen vacancies

It is revealed from first-principles calculations that polarization-induced asymmetric distribution of oxygen vacancies plays an important role in the insulating behavior at p-type LaAlO3/SrTiO3 interface. The formation energy of the oxygen vacancy (V-O) is much smaller than that at the surface of the LaAlO3 overlayer, causing all the carriers to be compensated by the spontaneously formed V-O's at the interface. In contrast, at an n-type interface, the formation energy of V-O is much higher than that at the surface, and the V-O's formed at the surface enhance the carrier density at the interface. This explains the puzzling behavior of why the p-type interface is always insulating but the n-type interface can be conducting.

Oxygen pressure dependences of structure and properties of ZnO films deposited on amorphous glass substrates by pulsed laser deposition

ZnO films are prepared on glass substrates by pulsed laser deposition (PLD) at different oxygen pressures, and the effects of oxygen pressure on the structure and optoelectrical properties of as-grown ZnO films are investigated. The results show that the crystallite size and surface roughness of the films increase, but the carrier concentration and optical energy gap E-g decrease with increasing oxygen pressure. Only UV emission is found in the photoluminescence (PL) spectra of all the samples, and its intensity increases with oxygen pressure. Furthermore, there are marked differences in structure and properties between the films grown at low oxygen pressures (0.003 and 0.2 Pa) and the films grown at high oxygen pressures (24 and 150 Pa), which is confirmed by the fact that the crystallite size and UV emission intensity markedly increase, but the carrier concentration markedly decreases as oxygen pressure increases from 0.2 to 24 Pa. These results show that the crystal quality, including the microstructural quality and stoichiometry proportion, of the prepared ZnO films improves as oxygen pressure increases, particularly from 0.2 to 24 Pa.

Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth

Argon gas, as a protective environment and carrier of latent heat, has an important effect on the temperature distribution in crystals and melts. Numeric simulation is a potent tool for solving engineering problems. In this paper, the relationship between argon gas flow and oxygen concentration in silicon crystals was studied systematically. A flowing stream of argon gas is described by numeric simulation for the first time. Therefore, the results of experiments can be explained, and the optimum argon flow with the lowest oxygen concentration can be achieved. (C) 2002 Elsevier Science B.V. All rights reserved.

ELECTRICAL CHARACTERS OF OXYGEN DEFECTS IN SILICON SUBJECTED TO INTRINSIC GETTERING TREATMENT

The influence of oxygen defects on the resistivity and mobility of silicon wafers is discussed. Grinding processes were performed on the surfaces of samples in order to obtain the information on interior defects of the samples. Spreading resistivity and Hall measurements prove that SiO(x) complexes alone result in resistivity increase and mobility decrease. Deep level transient spectroscopy experiments prove that SiO(x) complexes alone are electrically active. A mechanism of carrier scattering by electrically active SiO(x) complex is proposed to explain the changes of resistivity and mobility.

Low-temperature (10 K) infrared measurement of interstitial oxygen in heavily antimony-doped silicon via wafer thinning

A new technique is reported for the rapid determination of interstitial oxygen in heavily Sb-doped silicon. This technique includes wafer thinning and low-temperature 10 K infrared measurement on highly thinned wafers. The fine structure of the interstitial oxygen absorption band around 1136 cm(-1) is obtained. Our results show that this method efficiently reduces free-carrier absorption interference, allowing a high reliability of measurement, and can be used at resistivities down to 1 x 10(-2) Omega cm for heavily Sb-doped silicon.

Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth

Argon gas, as a protective environment and carrier of latent heat, has an important effect on the temperature distribution in crystals and melts. Numeric simulation is a potent tool for solving engineering problems. In this paper, the relationship between argon gas flow and oxygen concentration in silicon crystals was studied systematically. A flowing stream of argon gas is described by numeric simulation for the first time. Therefore, the results of experiments can be explained, and the optimum argon flow with the lowest oxygen concentration can be achieved. (C) 2002 Elsevier Science B.V. All rights reserved.

Affinity and Specificity of Levamlodipine-Human Serum Albumin Interactions: Insights into Its Carrier Function

The affinity and specificity of drugs with human serum albumin (HSA) are crucial factors influencing the bioactivity of drugs. To gain insight into the carrier function of HSA, the binding of levamlodipine with HSA has been investigated as a model system by a combined experimental and theoretical/computational approach. The fluorescence properties of HSA and the binding parameters of levamlodipine indicate that the binding is characterized by one binding site with static quenching mechanism, which is related to the energy transfer. As indicated by the thermodynamic analysis, hydrophobic interaction is the predominant force in levamiodipine-HSA complex, which is in agreement with the computational results. And the hydrogen bonds can be confirmed by computational approach between levamlodipine and HSA. Compared to predicted binding energies and binding energy spectra at seven sites on HSA, levamlodipine binding HSA at site I has a high affinity regime and the highest specificity characterized by the largest intrinsic specificity ratio (ISR). The binding characteristics at site I guarantee that drugs can be carried and released from HSA to carry out their specific bioactivity.

Modified Simplified Rate Equation Model of Flowing Chemical Oxygen-Iodine Laser and its Application

A modified simplified rate equation (RE) model of flowing chemical oxygen-iodine laser (COIL), which is adapted to both the condition of homogeneous broadening and inhomogeneous broadening being of importance and the condition of inhomogeneous broadening being predominant, is presented for performance analyses of a COIL. By using the Voigt profile function and the gain-equal-loss approximation, a gain expression has been deduced from the rate equations of upper and lower level laser species. This gain expression is adapted to the conditions of very low gas pressure up to quite high pressure and can deal with the condition of lasing frequency being not equal to the central one of spectral profile. The expressions of output power and extraction efficiency in a flowing COIL can be obtained by solving the coupling equations of the deduced gain expression and the energy equation which expresses the complete transformation of the energy stored in singlet delta state oxygen into laser energy. By using these expressions, the RotoCOIL experiment is simulated, and obtained results agree well with experiment data. Effects of various adjustable parameters on the performances of COIL are also presented.

Surface Tension and Its Temperature Coefficient of Molten Tin Determined with the Sessile Drop Method at Different Oxygen Partial Pressures

The surface tension of molten tin has been determined by the sessile drop method at The surface tension of molten tin has been determined by the sessile drop method at temperatures ranging from 523 to 1033 K and in the oxygen partial pressure (P-O2) range from 2.85 x 10(-19) to 8.56 x 10(-6) MPa, and its dependence on temperature and oxygen partial pressure has been analyzed. At P-O2 = 2.85 x 10(-19) and 1.06 x 10(-15) MPa, the surface tension decreases linearly with the increase of temperature and its temperature coefficients are -0.151 and -0.094 mNm(-1) K-1, respectively. However, at high P-O2 (3.17 x 10(-10), 8.56 x 10(-6) MPa), the surface tension increases with the temperature near the melting point (505 K) and decreases above 723 K. The surface tension decrease with increasing P-O2 is much larger near the melting point than at temperatures above 823 K. The contact angle between the molten tin and the alumina substrate is 158-173degrees, and the wettability is poor.

Performance analyses of flowing chemical oxygen-iodine laser

A modified simplified rate-equation model that utilizes the Voigt profile function and another gain saturation model deduced from the kinetic equations are presented for performance analyses of a flowing chemical oxygen-iodine laser. Both models are adapted to both the condition of homogeneous broadening and that of inhomogeneous broadening being of importance and the condition of inhomogeneous broadening being predominant. Effects of temperature and iodine density on the output power and on variations of output power, optical intensity, and saturation intensity with flow distance are presented as well. There are differences between results of two models, but both qualitatively agree with known results.

Effects of Translational Nonequilibrium on Performance of Flowing Chemical Oxygen-Iodine Laser

The effect of the translational nonequilibrium on performance modeling of flowing chemical oxygen-iodine lasers (COIL) is emphasized in this paper. The spectral line broadening (SLB) model is a basic factor for predicting the performances of flowing COIL. The Voigt profile function is a well-known SLB model and is usually utilized. In the case of gas pressure in laser cavity less than 5 torr, a low pressure limit expression of the Voigt profile function is used. These two SLB models imply that ail lasing particles can interact with monochromatic laser radiation. Basically, the inhomogeneous broadening effects are not considered in these two SLB models and they cannot predict the spectral content. The latter requires consideration of finite translational relaxation rate. Unfortunately, it is rather difficult to solve simultaneously the Navier-Stokes (NS) equations and the conservation equations of the number of lasing particles per unit volume and per unit frequency interval. In the operating condition of flowing COIL, it is possible to obtain a perturbational solution of the conservational equations for lasing particles and deduce a new relation between the gain and the optical intensity, i.e., a new gain-saturation relation. By coupling the gain-saturation relation with other governing equations (such as the NS equations, chemical reaction equations and the optical model of gain-equal-loss), We have numerically calculated the performances of flowing COIL. The present results are compared with those obtained by the common rate-equation (RE) model, in which the Voigt profile function and its low pressure limit expression are used. The difference of different model's results is great. For instance, in the case of lasing frequency coinciding with the central frequency of line profile and very low gas pressure, the gain-saturation relation of the present model is quite different with that of the RE model.

Carrier concentration profiling in magnetic GaMnSb/GaSb investigated by electrochemistry capacitance-voltage profiler

Depth profiles of carrier concentrations in GaMnSb/GaSb are investigated by electrochemistry capacitance-voltage profiler and electrolyte of Tiron. The carrier concentration in GaMnSb/GaSb measured by this method is coincident with the results of Hall and X-ray diffraction measurements. It is indicated that most of the Mn atoms in GaMnSb take the site of Ga, play a role of acceptors, and provide shallow acceptor level(s).