Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE

Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs multiple quantum wells (MQWs) has been successfully performed on patterned InP substrates by ultra-low pressure MOVPE. Flat and clear interfaces were obtained for the narrow stripe selectively grown MQWs under optimized growth conditions. These selectively grown MQWs were covered by specific InP layers, which can keep the MQWs from being oxidized during the fabrication of the devices. The characteristics of selectively grown MQWs were strongly dependent on the mask stripe width. In particular, a PL peak wavelength shift of 73 nm, a PL intensity of more than 57% and a PL FWHM of less than 102 meV were observed simultaneously with a small mask stripe width varying from 0 to 40 mu m. The results were explained by considering the migration effect from the masked region (MMR) and the lateral vapour diffusion effect (LVD).

Investigations on oxide-free InGaAlAs waveguides grown by narrow stripe selective MOVPE

Oxide-free InGaAlAs waveguides have been grown on the InP substrates patterned with pairs of SiO2 mask stripes using narrow stripe selective MOVPE. The mask stripe width is varied from 0 to 40 pm, while the window region width between a pair of mask stripes is fixed at 1.5, 2.5 and 3.5 mu m, respectively. Smooth surface s and flat interfaces are obtained in the selectively grown InQaAlAs waveguides. There exhibit strong dependences of the thickness enhancement ratio and the photoluminescence (PL) spectrum on the mask stripe width and the window region width for the InGaAlAs wavegwdes. A large PL peak wavelength shift of 79 nm and a PL full width of at half maximum (FWHM) of less than 64 meV are obtained simultaneously. Some possible interpretations for our investigations are presented by considering both the migration effect from a masked region (MMR) and the lateral vapor diffusion effect (LVD).

Growth mechanism of InGaAlAs waveguides by narrow stripe selective MOVPE

Growth mechanism of InGaAlAs waveguides by narrow stripe selective MOVPE has been studied. Both the InGaAlAs bulk waveguides and the InGaAlAs MQW waveguides were successful grown on the patterned substrates at optimized growth conditions. The mask stripe width varied from 0 to 40 mu m, while the window region width between a pair of mask stripes was fixed 2.5 mu m. These selectively grown waveguides were covered by specific InP layers, which can keep the InGaAlAs waveguides from being oxidized during the fabrication of devices. In particular, there exhibit strong dependences of the photoluminescence (PL) spectrum on the mask stripe width for the samples. The results were explained in considering both the migration effect from a masked region (MMR) and the lateral vapor diffusion effect (LVD).

Narrow stripe selective growth of InGaAlAs waveguides used for buried heterostructure lasers - art. no. 63210I

The narrow stripe selective growth of the InGaAlAs bulk waveguides and InGaAlAs MQW waveguides was first investigated. Flat and clear interfaces were obtained for the selectively grown InGaAlAs waveguides under optimized growth conditions. These selectively grown InGaAlAs waveguides were covered by specific InP layers, which can keep the waveguides from being oxidized during the fabrication of devices. PL peak wavelength shifts of 70 nm for the InGaAlAs bulk waveguides and 73 nm for the InGaAlAs MQW waveguides were obtained with a small mask stripe width varying from 0 to 40 gm, and were interpreted in considering both the migration effect from the masked region (MMR) and the lateral vapor diffusion effect (LVD). The quality of the selectively grown InGaAlAs MQW waveguides was confirmed by the PL peak intensity and the PL FWHM. Using the narrow stripe selectively grown InGaAlAs MQW waveguides, then the buried heterostructure (BH) lasers were fabricated by a developed unselective regrowth method, instead of conventional selective regrowth. The InGaAlAs MQW BH lasers exhibit good performance characteristics, with a high internal differential quantum efficiency of about 85% and an internal loss of 6.7 cm(-1).

The effect of low temperature GaAs nucleation on the growth of GaN on Silicon (001) during MOVPE process

High quality cubic GaN was grown on Silicon (001) by metalorganic vapor phase epitaxy (MOVPE) using a GaAs nucleation layer grown at low temperature. The influence of various nucleation conditions on the GaN epilayers' quality was investigated. We found that the GaAs nucleation layer grown by atomic layer epitaxy (ALE) could improve the quality of GaN films by depressing the formation of mixed phase. Photoluminescence (PL) and X-ray diffraction were used to characterize the properties of GaN epilayers. High quality GaN epilayers with PL full width at half maximum (FWHM) of 130meV at room temperature and X-ray FWHM of 70 arc-min were obtained by using 10-20nm GaAs nucleation layer grown by ALE.

Cd、Cu污染胁迫对拟南芥幼苗错配修复相关基因表达的影响

土壤重金属污染问题已成为影响我国持续农业和生态环境质量的重要因素，引起了人们的广泛关注。由于传统污染诊断方法的缺点，急需建立土壤污染生态毒理学诊断方法，生物标记物技术则是其中的研究热点之一。本文采用营养液培养的方法，以模式植物拟南芥为试材，采用半定量反转录聚合酶链式反应（RT-PCR）技术，结合传统分析方法研究了Cd、Cu在不同胁迫水平下对拟南芥幼苗的形态、生理及分子水平的毒性效应，并在此基础上，比较和分析不同测试指标对Cd、Cu胁迫响应的敏感性，进而筛选对Cd、Cu胁迫响应敏感的生物标记物。主要结果如下： 1 不同浓度Cd和Cu污染胁迫下，拟南芥幼苗生长均受到不同程度的影响 幼苗初生根伸长均受到明显抑制，而地上部叶片数、地上部鲜重却没有显著的变化。重金属首先作用于植物的根系，根系的生长对胁迫响应的敏感性高于地上部。 2 幼苗地上部的可溶性蛋白含量受到不同程度干扰，而在不同浓度的Cd、 Cu处理下，叶绿素含量变化不明显，表明幼苗地上部可溶性蛋白质含量对胁迫的敏感性高于叶绿素含量的变化。 3 幼苗地上部错配修复（MMR）和增殖细胞核抗原（PCNA）基因都明显 地出现了表达诱导或表达抑制，表明MMR和PCNA基因表达的变化对Cd、Cu胁迫表现出较高的敏感性。 4 幼苗地上部的可溶性蛋白质含量及幼苗地上部MMR和PCNA基因表达 均对Cd和Cu污染胁迫具有较高的敏感性，两者均可用于指示Cd和Cu污染的敏感生物标记物。基因表达变化图谱虽然对污染胁迫响应比较敏感，是一种污染胁迫响应敏感的生物标记物，但其在生态毒理诊断中的应用还需进一步的实验对其予以证明。

基于错配修复系统的基因突变检测生物芯片研究

许多人类疾病和微生物抗药性的产生都是由基因组中单个碱基的替换、插入或缺失等基因突变引起的。因此，迫切需要发展快速、高通量基因突变检测方法来实现对基因疾病和细菌抗药性的早期诊断。本研究针对匕述需求发展了纂于DN八错配修复系统的墓因突变检测生物芯片方法。根据DNA错配修复MtltS蛋白结构与功能上的高度保守性，通过PCR从E.coli K-12基因组中扩一增出DNA错配修复基因，甩石（2.56kb）。通过基因水平的分子操纵，构建了Trx-His6-MutS（THM）、Trx-His6-Linker peptide-Muts（THLM）、Trx-His6-GFP-Linker peptide-MutS（THGLM）和Trx-His6-Linker peptide-Strep-tagll-Linker peptide-MutS（THLSLM）的融合基因并在大肠杆菌中进行了IPTG诱导表达。SDS-PAGE分析表明均有一与预期分子量相应的诱导表达条带出现，其表达量占菌体蛋白的30％左右，且以可溶形式存在。融合蛋白中Trx和His6亲和肤能增加表达蛋白的可溶性及便于蛋白的纯化。连接肤的加入增大了融合蛋白各个成分之间的距离，减少空间位阻，使各个蛋白能够较大程度地保持其原有的生物活性。MLltS融合蛋白的生物活性鉴定结果表明：它们既能识别、结合含有错配碱基的DNA双链，又保留了其它融合成分的生物活性。利用融合蛋白THLSLM中的Strep-tagII与Streptavidin相互作用的天然特性，使融合蛋白THLSLM在StrePtavidin修饰过的芯片基质上自动布阵沉积，制作成蛋白质芯片来识别、结合样品中含有错配或未配刘碱基的DNA双链。THGLM、THLM-Cy3和THLSLM能够使MutS蛋白显示不同的标记信号，通过它们识别并结合固定在DNA芯片基质上的基因片段来发展基因突变检测DNA芯片方法。利用基于MutS的蛋白质芯片和DNA芯片方法对含有不同错配类型、不同长度的DNA片段和错配序列背景对错配结合的影响做了深入研究，证明了MutS介导的基因突变检测生物芯片方法的可行性。基于MutS蛋白的鳌因突变检测生物芯片方法借用了生物系统本身的DNA错配修复（Mismatch Repair，MMR）机制。DNA错配修复过程是许多修复蛋白之间的相互作用共同完成的，其中蛋白MutS、MutL和MutH在肠道细菌例如大肠杆菌的甲基定向错配修复中起决定作用。这些修复蛋白的相关研究也引起了越来越多学者的关注，但对于MutL蛋白的体外生物功能一直存在争议，从而限制了该蛋白的应用研究。本研究利用基因的体外拼接技术构建了融合蛋白Trx-Hi56-Linker peptide-MutL（THLL）、Trx-His6-GFP-Linker peptide-MutL（THGLL）和Trx-His6-Linker peptide-Strep-tagII-Linker peptide-MutL（THLSLL）。非变性凝胶电泳鉴定MutL融合蛋白体外生物功能结果表明：THLL、THGLL和THLsLL都能增加融合蛋白Trx-His6-Linker peptide-MutS（THLM）与含有错配碱基DNA双链的结合，但受ATP浓度变化的影响很大。通过融合蛋白THGLL中绿色荧光蛋白（Green Fluorescent Protein，GFP）的荧光信号或THLSLL中Strep-tagII的特性并利用酶学反应来指示该蛋白的存在，发展了体外研究DNA错配修复蛋白MtuS和MutL之间相互作用的简便方法。本研究以构建的MutS融合蛋白为分子识别元件发展了基因突变检测生物芯片并利用构建的MutL融合蛋白发展了体外研究DNA错配修复蛋白MLuS和MutL之间相互作用的简便方法。建立的融合分子系统方法也为研究其它的蛋白质或生物大分子之间的相互作用提供了一个技术平台。此外，本研究构建的融合蛋白THGLL及其 DNA错配修复蛋白与GFP的融合构想还可用来进行DNA错配修复基因产物的表达与基因突变频率和人类肿瘤恶性程度的相关性研究。

DNA错配修复系统研究进展

DNA错配修复 (mismatchrepair ,MMR)系统广泛存在于生物体中 .从原核生物大肠杆菌到真核生物及人类 ,MMR系统有不同的组成成分和修复机制 .人体内MMR基因缺陷会造成基因组的不稳定并诱发遗传性非息肉型直肠癌以及其他自发性肿瘤 .大肠杆菌MMR系统中的MutS蛋白可特异识别错配或未配对碱基 ,目前已经发展了多种基于MutS蛋白的基因突变 /多态性检测技术 .

The synthesis of some 1,1 '-ferrocene dichalcogenato complexes containing chromium, molybdenum and tungsten

Both dinuclear [3] ferrocenophane derivatives of the type Fe(C5H4E)(2)[MLn] [E = S,Se; MLn = Cp* - Cr(NO) (1), Cp* Mo(NO) (2a,2b), CpMo(NO) (3), Cp* W(NO) (4a,4b), Ca2Mo (6b), Cp2W (7a)] and trinuclear 1,1' - ferrocene dichalcogenato complexes Fe(C5H4E)(2)[MLn](2)[MLn = Cp* Cr(NO)(2), E = S(8a), Se(8b)] were synthesized and characterized by their IR, H-1 MMR and EI - MS spectra as well as their elemental analyses.