Investigations on oxide-free InGaAlAs waveguides grown by narrow stripe selective MOVPE


Autoria(s): Feng, W (Feng, W.); Pan, JQ (Pan, J. Q.); Zhou, F (Zhou, F.); Zhao, LJ (Zhao, L. J.); Zhu, HL (Zhu, H. L.); Wang, W (Wang, W.)
Data(s)

2006

Resumo

Oxide-free InGaAlAs waveguides have been grown on the InP substrates patterned with pairs of SiO2 mask stripes using narrow stripe selective MOVPE. The mask stripe width is varied from 0 to 40 pm, while the window region width between a pair of mask stripes is fixed at 1.5, 2.5 and 3.5 mu m, respectively. Smooth surface s and flat interfaces are obtained in the selectively grown InQaAlAs waveguides. There exhibit strong dependences of the thickness enhancement ratio and the photoluminescence (PL) spectrum on the mask stripe width and the window region width for the InGaAlAs wavegwdes. A large PL peak wavelength shift of 79 nm and a PL full width of at half maximum (FWHM) of less than 64 meV are obtained simultaneously. Some possible interpretations for our investigations are presented by considering both the migration effect from a masked region (MMR) and the lateral vapor diffusion effect (LVD).

Oxide-free InGaAlAs waveguides have been grown on the InP substrates patterned with pairs of SiO2 mask stripes using narrow stripe selective MOVPE. The mask stripe width is varied from 0 to 40 pm, while the window region width between a pair of mask stripes is fixed at 1.5, 2.5 and 3.5 mu m, respectively. Smooth surface s and flat interfaces are obtained in the selectively grown InQaAlAs waveguides. There exhibit strong dependences of the thickness enhancement ratio and the photoluminescence (PL) spectrum on the mask stripe width and the window region width for the InGaAlAs wavegwdes. A large PL peak wavelength shift of 79 nm and a PL full width of at half maximum (FWHM) of less than 64 meV are obtained simultaneously. Some possible interpretations for our investigations are presented by considering both the migration effect from a masked region (MMR) and the lateral vapor diffusion effect (LVD).

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IEEE. Princeton Univ

Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

IEEE. Princeton Univ

Identificador

http://ir.semi.ac.cn/handle/172111/9786

http://www.irgrid.ac.cn/handle/1471x/65894

Idioma(s)

英语

Publicador

IEEE

345 E 47TH ST, NEW YORK, NY 10017 USA

Fonte

Feng, W (Feng, W.); Pan, JQ (Pan, J. Q.); Zhou, F (Zhou, F.); Zhao, LJ (Zhao, L. J.); Zhu, HL (Zhu, H. L.); Wang, W (Wang, W.) .Investigations on oxide-free InGaAlAs waveguides grown by narrow stripe selective MOVPE .见:IEEE .2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings,345 E 47TH ST, NEW YORK, NY 10017 USA ,2006,306-309

Palavras-Chave #光电子学 #BURIED-HETEROSTRUCTURE LASERS #BANDGAP ENERGY CONTROL #VAPOR-PHASE EPITAXY #PRESSURE MOVPE #CONVERTER
Tipo

会议论文