Growth mechanism of InGaAlAs waveguides by narrow stripe selective MOVPE
| Data(s) |
2006
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| Resumo |
Growth mechanism of InGaAlAs waveguides by narrow stripe selective MOVPE has been studied. Both the InGaAlAs bulk waveguides and the InGaAlAs MQW waveguides were successful grown on the patterned substrates at optimized growth conditions. The mask stripe width varied from 0 to 40 mu m, while the window region width between a pair of mask stripes was fixed 2.5 mu m. These selectively grown waveguides were covered by specific InP layers, which can keep the InGaAlAs waveguides from being oxidized during the fabrication of devices. In particular, there exhibit strong dependences of the photoluminescence (PL) spectrum on the mask stripe width for the samples. The results were explained in considering both the migration effect from a masked region (MMR) and the lateral vapor diffusion effect (LVD). Growth mechanism of InGaAlAs waveguides by narrow stripe selective MOVPE has been studied. Both the InGaAlAs bulk waveguides and the InGaAlAs MQW waveguides were successful grown on the patterned substrates at optimized growth conditions. The mask stripe width varied from 0 to 40 mu m, while the window region width between a pair of mask stripes was fixed 2.5 mu m. These selectively grown waveguides were covered by specific InP layers, which can keep the InGaAlAs waveguides from being oxidized during the fabrication of devices. In particular, there exhibit strong dependences of the photoluminescence (PL) spectrum on the mask stripe width for the samples. The results were explained in considering both the migration effect from a masked region (MMR) and the lateral vapor diffusion effect (LVD). zhangdi于2010-03-29批量导入 zhangdi于2010-03-29批量导入 Zhejiang Univ.; Royal Inst Technol.; Chinese Univ Hong Kong.; SUNY Buffalo.; IEEE LEOS. Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China Zhejiang Univ.; Royal Inst Technol.; Chinese Univ Hong Kong.; SUNY Buffalo.; IEEE LEOS. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
IEEE 345 E 47TH ST, NEW YORK, NY 10017 USA |
| Fonte |
Feng, W (Feng, W.); Pan, WWJQ (Pan, W. Wang J. Q.); Zhu, HL (Zhu, H. L.); Zhao, LJ (Zhao, L. J.); Zhou, F (Zhou, F.); Wang, LF (Wang, L. F.); Wang, BJ (Wang, B. J.); Bian, J (Bian, J.); An, X (An, X.) .Growth mechanism of InGaAlAs waveguides by narrow stripe selective MOVPE .见：IEEE .Proceedings of International Symposium on Biophotonics Nanophotonics and Metamaterials,345 E 47TH ST, NEW YORK, NY 10017 USA ,2006,284-287 |
| Palavras-Chave | #光电子学 #VAPOR-PHASE EPITAXY |
| Tipo |
会议论文 |
