41 resultados para Low resistance lap joint

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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We present the fabrication process and experimental results of 850-nm oxide-confined vertical cavity surface emitting lasers (VCSELs) fabricated by using dielectric-free approach. The threshold current of 0.4 mA, which corresponds to the threshold current density of 0.5 kA/cm(2), differential resistance of 76 Omega, and maximum output power of more than 5 mW are achieved for the dielectric-free VCSEL with a square oxide aperture size of 9 mu m at room temperature (RT). L-I-V characteristics of the dielectric-free VCSEL are compared with those of conventional VCSEL with the similar aperture size, which indicates the way to realize low-cost, low-power consumption VCSELs with extremely simple process. Preliminary study of the temperature-dependent L-I characteristics and modulation response of the dielectric-free VCSEL are also presented.

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A temperature-controlled pool boiling (TCPB) device was developed to perform pool boiling heat transfer studies at both normal gravity on Earth and microgravity in the drop tower Beijing and aboard a Chinese recovery satellite. Two platinum wires of 60 ?m in diameter were simultaneously used as heaters and thermometers. The lengths were 30 mm and 40 mm, respectively. The ends of wires were soldered with copper poles to provide low resistance paths for the electric current. The heater resistance, and thus the heater temperature, was kept constant by a feedback circuit similar to that used in constant-temperature hot-wire anemometry. The fluid was R113 at 0.1 Mpa and subcooled by 30 ?C nominally for all cases. The results of the experiments at normal gravity were presented. Four modes, namely single-phase convection, nucleate boiling, transition two-mode boiling, and film boiling were observed. A few data obtained from several preliminary experiments at microgravity in the drop tower Beijing were also presented. A slight increase of the heat flux was obtained.

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We present our experimental results supporting optical-electrical hybrid data storage by optical recording and electrical reading using Ge2Sb2Te5as recording medium. The sheet resistance of laser- irradiated Ge2Sb2Te5. lms exhibits an abrupt change of four orders of magnitude ( from 10 7 to 10 3./ sq) with increasing laser power, current- voltage curves of the amorphous area and the laser- crystallized dots, measured by a conductive atomic force microscope ( C- AFM), show that their resistivities are 2.725 and 3.375 x 10- 3., respectively, the surface current distribution in the. lms also shows high and low resistance states. All these results suggest that the laser- recorded bit can be read electrically by measuring the change of electrical resistivity, thus making optical electrical hybrid data storage possible.

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To form low-resistance Ohmic contact to p-type GaN, InGaN/GaN multiple quantum well light emitting diode wafers are treated with boiled aqua regia prior to Ni/Au (5 nm/5 nm) film deposition. The surface morphology of wafers and the current-voltage characteristics of fabricated light emitting diode devices are investigated. It is shown that surface treatment with boiled aqua regia could effectively remove oxide from the surface of the p-GaN layer, and reveal defect-pits whose density is almost the same as the screw dislocation density estimated by x-ray rocking curve measurement. It suggests that the metal atoms of the Ni/Au transparent electrode of light emitting diode devices may diffuse into the p-GaN layer along threading dislocation lines and form additional leakage current channels. Therefore, the surface treatment time with boiled aqua regia should not be too long so as to avoid the increase of threading dislocation-induced leakage current and the degradation of electrical properties of light emitting diodes

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As-grown Fe-doped semi-insulating InP single crystal has been converted into n-type low-resistance material after high temperature annealing. Defects in the InP materials have been studied by conventional Hall effect measurement, thermally stimulated current spectroscopy, deep level transient spectroscopy and X-ray diffraction respectively. The results indicate that Fe atoms in the InP material change from the substitutional to the interstitial sites under thermal activation. Consequently, the InP material loses its deep compensation centers which results in the change in types of conduction. The mechanism and cause of the phenomena have been analyzed through comparison of the sites of Fe atom occupation and activation in doping, diffusion and ion implantation processes of InP.

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A low resistance and shallow ohmic contact to n-GaAs is performed by using Ge/Pd/GaAs trilayer structure and rapid thermal annealing process. The dependence of specific contact resistivity on the temperature of rapid thermal annealing is investigated. A good ohmic contact is formed after annealing at 400-500 degrees C for 60 s. The best specific contact resistivity is 1.4 x 10(-6) Omega cm(2). Auger electron spectroscopy (AES), secondary ion mass spectrometry (SIMS) and scanning electron microscopy (SEM) are used to analyze the interfacial microstructure. A strong correlation between the contact resistance and the film microstructure is observed.

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Electrical, structural and reaction characteristics of In-based ohmic contacts to n-GaAs were studied. Attempts were made to form a low-band-gap interfacial phase of InGaAs to reduce the barrier height at the metal/semiconductor junction, thus yielding low-resistance, highly reliable contacts. The contacts were fabricated by e-beam sputtering Ni, NiIn and Ge targets on VPE-grown n(+)-GaAs film (approximate to 1 mu m, 2 x 10(18) cm(-3)) in ultrahigh vacuum as the structure of Ni(200 Angstrom)/NiIn(100 Angstrom)/Ge(40 Angstrom)/n(+)-GaAs/SI-GaAs, followed by rapid thermal annealing at various temperatures (500-900 degrees C). In this structure, a very thin layer of Ge was employed to play the role of heavily doping donors and diffusion limiters between In and the GaAs substrate. Indium was deposited by sputtering NiIn alloy instead of pure In in order to ensure In atoms to be distributed uniformly in the substrate; nickel was chosen to consume the excess indium and form a high-temperature alloy of Ni3In. The lowest specific contact resistivity (rho(c)) of (1.5 +/- 0.5)x 10(-6) cm(2) measured by the Transmission Line Method (TLM) was obtained after annealing at 700 degrees C for 10 s. Auger sputtering depth profile and Transmission Electron Microscopy (TEM) were used to analyze the interfacial microstructure. By correlating the interfacial microstructure to the electronical properties, InxGa1-xAs phases with a large fractional area grown epitaxially on GaAs were found to be essential for reduction of the contact resistance.

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温度场是影响激光焊接焊缝成形质量的关键因素. 针对非熔透型激光搭接焊接头焊缝成"钉头"状的特点,通过分析焊接时材料吸收激光能量的分布情况,提出了高斯面热源加线性递增式柱热源的复合体热源模型. 模型考虑板间接触热阻的影响,并将计算结果和试验结果进行了对比,发现模拟出的焊缝形状和试验吻合较好;此外基于本模型对焊缝各处的热循环与焊缝组织形貌及显微硬度的关系进行了分析. 结果表明,焊缝组织形貌及显微硬度除与加热和冷却速率有关外,峰值温度对其也有重要影响;在热循环基本一致的情况下焊缝的性能相似. 该模型较准确地模拟了薄板激光深熔焊接熔池温度场,对研究激光深熔焊接温度场问题和激光工艺参数的优化选择具有参考价值

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Three molecularly imprinted monolithic columns with different length but almost identical column volume had been prepared. It was observed that the separation factors of diastereomers and enantiomers were almost unaffected by column length. However, the short column with dimension of 38 mm x 8 mm W. showed much lower resistance to flow rate so that it could be operated at much higher flow rates. By combining stepwise gradient elution with elevated flow rate, the diastereomers of cinchonine and cinchonidine and the enantiomers of Cbz-DL-Trp and Fmoc-DL-Trp were successfully separated within 3 min on the short column with dimension of 38 mm. x 8 mm i.d.. Based on the above results, a cinchonine imprinted monolithic disk with dimension of 10 mm x 16 mm W. was further developed. The SEM image and the pore size distribution profile showed that large flow-through pores are present on the prepared monolith, which allowed mobile phase to flow through the disk with very low resistance. Chromatographic performances on the monolithic disk were almost unchanged compared with the long columns. A rapid separation of cinchonine and cinchonidine was achieved in 2.5 min at the flow rate of 9.0 ml/min. Furthermore, it was observed that there was almost no effect of the flow rate on the dynamic binding capacity at high flow rates. In addition, the effect of the loading concentration of analytes on the dynamic binding capacity, namely adsorption isotherm, was also investigated. A non-linear adsorption isotherm of cinchonine was observed on the molecularly imprinted monolith with cinchonine as template, which might be a main reason to result in the peak tailing of template molecule. (C) 2004 Elsevier B.V. All rights reserved.

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Porous polytetrafluoroethylene (PTFE) membranes were used as support material for Nafion((R))/PTFE composite membranes. The composite membranes were synthesized by impregnating porous PTFE membranes with a self-made Nafion solution. The resulting composite membranes were mechanically durable and quite thin relative to traditional perfluorosulfonated ionomer membranes (PFSI); we expect the composite membranes to be of low resistance and cost. In this study, we used three kinds of porous PTFE films to prepare Nafion/PTFE composite membranes of different thickness. Scanning electron micrographs and oxygen permeabilities showed that Nafion resin is distributed uniformly in the composite membrane and completely plug the micropores, there is a continuous thin Nation film present on the PTFE surface. The variation in water content of the composite and Nafion 115 membranes with temperature was determined. At the same temperature, water content of the composite membranes was smaller than that of the Nafion 115. In both dry and wet conditions, maximum strength and break strength of C-325(#) and C-345(#) were larger than those of Nafion 112 due to the reinforcing effect of the porous PTFE films. And the PEMFC performances and the lifetime of the composite membranes were also tested on the self-made apparatus. Results showed that the bigger the porosity of the substrate PTFE films, the better the fuel cell performance; the fuel cell performances of the thin composite membranes were superior to that of Nation 115 membrane; and after 180 h stability test at 500 mA/cm(2), the cell voltage showed no obvious drop. (C) 2002 Published by Elsevier Science B.V.

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Direct methanol fuel cell (DMFC) has attracted wide attention due to its many advantages. However, its practical application is limited by the low electrocatalytic activity of the anodic Pt/C catalyst usually used for the methanol oxidation. In this paper, in order to increase the electrocatalytic performance of the Pt/C catalyst for the methanol oxidation, the black carbon, usually used as the supporter, was pretreated with CO2, air, HNO3 or H2O2. The cyclic voltarnmetric results indicated that the current densities of the anodic peak of methanol oxidation at the Pt/C catalysts with the black carbon pretreated with CO2,air, HN03, H202 and untreated black carbon were 39, 33, 32, 20 and 18 mA center dot cm(-2), respectively, illustrating that among the above five kinds of the Pt/C catalysts, the Pt/C catalyst with the black carbon pretreated with CO2 shows the best electrocatalytic activity and stability for the methanol oxidation. Its main reason is that the CO2 pretreatment could reduce the content of the oxygen-containing groups on the surface of the black carbon and increase the content of graphite in the black carbon, leading to the low resistance of the black carbon and the increase in the dispersion extent of the Pt particles in the Pt/C catalyst.

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The transfer of chloride ions into a low resistance anion exchange membrane (AEM) was investigated by cyclic voltammetry (CV) and electrochemical impedance spectra. In all cases, concentration polarization of Cl- ions is exterior to the membrane. It controls the flux and produces the limiting currents: either steady state or transient (peak type) current. In CV experiments, when the size of the holes in the membrane was much smaller than the distance between membrane holes, the Cl- anion transfer showed steady state voltammetric behavior. Each hole in the membrane can be regarded as a microelectrode and the membrane was equivalent to a microelectrode array in this condition. When the hole in the membrane was large or the distance between membrane holes was small, the CV curve of the Cl- anion transfer across the membrane showed a peak shape, which was attributed to linear diffusion. In AC impedance measurement, the impedance spectrum of the membrane system was composed of two semicircles at low DC bias, corresponding to the bulk characteristics of the membrane and the kinetic process of ion transfer, respectively. The bulk membrane resistance increases with increasing DC bias and only one semicircle was observed at higher DC bias. The parameters related to kinetic and membrane properties were discussed.

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The potential-response of a microdisk electrode made with a chloride-doped polypyrrole (PPY) film on a carbon fibre (CF) has been examined. The effect of the polymerization conditions on the response characteristics is discussed. The optimum conditions for preparing the electrode are: cycling potential from +0.8 to +1.0 V in 0.1-0.2M pyrrole (Py) containing 0.1M LiCl, electropolymerization time 15-20 min. The electrode gives a Nernstian response of 56-58 mV/pCl and a detection limit of 3.6 x 10(-5)M chloride. It has the advantages of low resistance, short conditioning time and fast response. It has been used satisfactorily for detection of chloride in serum.

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Located in the Paleozoic uplift along the southern margin of Tu-Ha basin in eastern Xinjiang, the newly discovered Hongshan Cu-Au deposit occurs in the superimposed Mesozoic volcanic basin upon the north section of later Paleozoic Dananhu-Tousuquan accretionary arc. Kalatage Cu-Au orebelt is controlled by NWW-trend faults, and includes Hongshan and Meiling Cu-Au deposits. The host rocks of Hongshan ore district are mainly rhyolitic-dacitic ignimbrites, whereas Cu-Au mineralization is closely related to quartz porphyry, rhyolitic porphyry and granitic porphyry. Mineralization styles are dominantly veinlet-disseminated and veinlet, occasionally stockwork. The mineral association is chalcopyrite, pyrite, bornite, chalcocite and sphalerite. The hydrothermal alteration consists of silicfication, sericitization, alunitization, pyrophylitization, illitization, hydromuscovitization, and chloritization. Hongshan Cu-Au deposit, on the edge of the desert, is one of the driest areas in eastrn Tianshan. Moreover, the highest temperature has been up to 60℃, and the average rainfall receives only 34.1mm/y. The light rainfall and rapid evaporation in the vicinity of this deposit have allowed the formation of a great variety of water-soluble sulfates. Oxidization zone of this deposit lies on the upper part of primary sulfide orebodies appearing with a depth of 50-60m, which is dominant in sulfate minerals. 1. Based on the field observation, the volcanic and sub-volcanic rock composition, hydrothermal alteration, ore structure and mineralization characteristics, this paper proposed that the Hongshan Cu-Au deposit belongs to a transitional type from high-sulfide epithermal to porphyry Cu-Au deposit, which corresponds with the typical HS-epithermal deposit such as Zijinshan Au-Cu deposit in Fujian Province, SE-China. 2. The Hongshan copper-gold deposit was controlled by the tectonic, stratum, magma activity and volcanic apparatus, whereas Au mineralization is closely related to quartz porphyry, rhyolitic porphyry and fine grained pyritization in hydrothermal activity, and Cu mineralization is closely related to quartz porphyry and hydrothermal explosive breccia. 3. Oxidation zone of Hongshan Cu-Au deposit lies on the upper part of primary sulfide orebodies deposit. 23 sulfate minerals were identified in this work. The results of samples XRD and chemical analysis were furthermore confirmed through thermal, infrared spectrum and mössbauer spectrum analysis. Among those, nine minerals as Ferricopiapite, Cuprocopiapite, Rhomboclase, Parabutlerite, Krausite, Yavapaiite, Metasideronatrite Kroehnkite and Paracoquimbite were founded in China for the first time. And Paracoquimbite was secondly reported in the world (first case reported at 1938 in Chile). 4. EPMA analysis shows that Al impurity in crystal lattice is important to polytype formation of paracoquimbite and coquimbite besides stack fault. 5. Compared with Meiling Cu-Au deposit in the same Kalatage ore belt from the characteristics of δ34S of barite, lithofacies, hydrothermal alteration and homogeneous temperature, Hongshan Cu-Au deposit belongs to the same metallogenic system of HS-epithermal type as Meiling Cu-Au deposit. But Hongshan Cu-Au deposit has less extensive alteration and shallower denudation. 6. Sulfur isotope analyses show that δ34S values of pyrites vary in the range of +1.86‰~+5.69‰, with an average of 3.70‰, mostly in the range of +1.86‰~+3.20‰, and δ34Scp<δ34Spy. Therefore ore-forming fluid of porphyry comes from mantle and was contaminated by the earth’s crust. Sulfur isotope has reached balance in ore-forming process. 7. Sulfur isotope analyses show that δ34S values of sulfates vary in the range of +2.15‰~+6.73‰, with an average of +3.74‰, mostly equals as δ34S values of primary sulfides in Hongshan Cu-Au deposit. So supergene sulfates inherit sulfur of primary sulfide. δ34S values are mostly same in different sulfates. As well as pyrite and chalcopyrite, volcanic hot spring and associated native sulfur underground also provide water medium and sulfur during the formation process of sulfate. 8. According to the EPMA of sample chalcopyrite and pyrite in Hongshan Cu-Au, the value of Cu/Ni is 0.98-34.72, mostly close to the value of 5, which shows that Hongshan deposit is a typical volcanogenic magmaic hypothermal deposit. Au and Ag, Zn, Te and Bi are positive correlation, Cu and Hg, Se, Sb are positive correlation, indicates Au and Cu don’t locate in the factor of mineralization of same mineralization groups. The reasons of gold concentration in the oxidation zone are: 1). Change of redox potential (Eh) makes gold to deposit from the liquid of mineralization zone; 2). PH is one of the most factors of gold’s deposition; 3). Soluble complex and colloid of gold can be adsorbed easily. 9. The biotite and hornblende K-Ar isotopic ages from the wall rock-quartz diorite, biotite granite and monzonite granite are 231.99±3.45Ma, 237.97±2.36Ma and 296.53±6.69Ma respectively. The ore-bearing rhyolitic breccia lava contains breccia of the biotite granite which indicates the volcanism and related Cu-Au mineralization occurred later than the granite, possibly in Mesozoic. K-Ar ages of granitoids in Sanya, Baishiquan and Hongliugou area and Molybdenite Re-Os age of Baishan Mo deposit all are in Triassic. Besides late Paleozoic magmatism, igneous magmatic event of Mesozoic was widespread in eastern Tianshan. 10. The K-Ar age dating indicates that the K-Ar age of Voltaite occurred below surface 1m is 56.02±3.98Ma, K-Ar age of Ferricopiapite occurred below surface 1.5m is 8.62±1.12Ma, K-Ar age of Yavapaiite occurred below surface 14 m is 4.07±0.39Ma, and K-Ar age of Voltaite occurred below surface 10 m is 14.73±1.73Ma. So the age interval of oxidation zone of Hongshan copper-golden bed is between 60 -3.38Ma. Oxidization occurred at Caenozoic era (from 65Ma), which can be identified through comparing with different deposits oxidation zone in other countries. The coupling between global tectonic event and climatic change event which occur from Caenozoic era has some effect on epigeosphere system, which can act on the surface of bed oxidation zone similarly. It induces that the age mentioned above coincide with collision of India-Asia and multistage uplifting of Qinhai-Tibet Plateau happened subsequently. Bed oxidation zone is the effect and record of collision and uplifting of Tibet Plateau. The strong chemical weathering of surface accumulation to which was leaded by PETM event occurred Paleocene and Eocene is the reason of Voltaite sharply rises. On the contrary, Ferricopiapite formed due to the global cold weather. The predecessor did much research through biota, isotopes, susceptibility, but this paper try to use different sulfate mineral instead of climatic change. So the research of sulfate minerals not only indicates a great deal of oxidized zone feature, but also the intergrowth of sulfate minerals may be used to trace paleoenviroment and paleoclimate of oxidation zone. 11. Analysis of the information of alteration and mineralization features of four bore cores, induced activity polarization well logging and Eh-4 geophysical section, deep mineralization anomaly objects of Hongshan ore districts shows low resistance, middle and high polarization, measurements of Eh-4 consecutive conductance section show the existing of concealed porphyry ore body deeper than 450m, on the top of and around rock body there are low resistance body ranged from 100-300Ω•m, this area may be the ore-bearing part. In a word, Hongshan Cu-Au deposit deposit is a combine of upper HS-style epithermal Au deposit and deeper porphyry mineralization system. It has great potential to find large HS-style epithermal-porphyry Au-Cu deposits. This paper consists of seven chapters and twenty seven sections. The geological character of deposit is basic condition in this work. Constitute of oxidation zone, research of sulfate mineral, relation between oxidation and primary zone, K-Ar ages of potassic sulfate are key parts of thesis. Genesis of ore deposit is the further expansion of this research. Analysis of ore-controlling factors is the penetration above basic. Analysis of potential is application of exploration.

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The 3-D velocity images of the crest and upper mantle beneath the region of 112° -124°E, 28°-39°N including the Dabie-Sulu orogenic belt are reconstructed by using 36405 P-wave arrivals of 3437 regional and 670 distant earthquakes during the period from 1981 to 1996, and gridding the area of 0.5° * 0.5°. The results of tomography demonstrate that: 1. The results of tomographic imaging show a broad heterogeneity in P wave velocity structure for the lithosphere beneath the Dabie-Sulu orogenic belt. 2. In the Dabie orogenic belt, the velocity patterns in the crust are different among various tectonic units. The Dabie and Qinling orogenic belts are remarkable in the tomographic images, and in mm the Hongan and Dabie blocks in the Dabie orogenic belt are also imaged very distinguishably. 3. A velocity (about 5.9~6.0 km/s) layer exists in the Dabie block at depth between 15~25 km, which is coincident with the low-resistance layer at the depth of 12-23 km, being inferred to be the tectonic detachment zone and suggesting that the extension detachment structure was formed in the middle crust. Beneath the southern and northerm Dabie tectonic units, the north-dipping high-velocity (at level of 6.5 ~ 6.6 km/s) block was developed in the crust, which might be correlated with the UHP rockswith low content of the meta-ultramafic rocks. This result is in agreement with the geological observation on the surface. 4. The velocity image at 40 km depth reveals the features at the top of mantle and the configuration of the Moho discontinuity. The depth of the Moho changes slightly along the trend of the orogenic belt. It in Hongan block is less than 40 km, but it is different in the western and eastern parts of the Dabie block, the former is more than 40 km, and the latter less than or equal to 40 km. The remnant of the mountain root exists between the Shangcheng-Macheng fault and the line of Huoshan-Yuexi-Yingshan in the Dabie orogenic belt, and beneath the southern and northern Dabie tectonic units. However, the thickness of the Moho is about 40 km and there is no obvious changes, which suggest that the Dabie orogenic belt has been experienced quite in the gravity equilibration. The Moho's depth in the Sulu is less than 40 km. 5. There is a dipping slab-like high-velocity body in the uppermost mantle. It is sandwiched by slow velocities and exists beneath the Dabie-Sulu orogenic belt in the range of depths between the Moho discontinuity and 110 km at least. This high-velocity body outlines a picture of the slab interpreted as the remnant of the Triassic subducted YZ. 6. The Sulu orogenic belt displays "crocodilian" velocity structure, the upper crust of the Yangtze thrusted over the Huabei crest, and the Huabei crust indented into the Yangtze crust, where the ancient subduction zone of the Yangtze lithosphere located. Based on the previous geological data, this structure is not related with the collision between the Yangtze and Sino-Korean Blocks, but caused by the sinistral offset of the Tan-Lu Fault. Studied on the velocity structure of the eastern Huabei lithosphere indicates: 1. The 'present-day' lithosphere of the eastern Huabei is between 40-100 km thick with greatly thinned lithosphere around the Bohai Sea. Generally, thickness of the lithosphere in this region decreased eastwards. 2. The attenuation of the lithosphere is attributed to the strongly uplift of the asthenosphere. In the area between the Taihang Mountains and the Tan-Lu Fault, there is a 'lever' with red low velocity belt, it is clearly defined, transverse continuity, depth between 100-150 km, local variations visible, and an upwards trend towards the Bohai Sea. Generally, the velocity structure in the mantle beneath the lithosphere displays irregular column-shape consisting of alternating high and low velocities, and when cold high velocity ancient lithosphere connects with the hot low velocity mantle materials forming precipitous compact structure. More heat pathways from the mantle occur towards the Tan-Lu Fault. 3. The strongly irregular characteristics of the contact between the asthenosphere and the lithosphere is induced by the long-term hot, chemical erosion and alteration on the contact. 4. There are still preserved high velocity lithosphedc root beneath Huabei with 'block-shape' distribution and surrounded by hot materials. Results of our studies indicate that the evolution models of the eastern China mantle are characterized by the direct contact between the uplifted lithosphere and the Huabei Craton accompanying the upwelling of the deep mantle materials. At the contact betwen the lithosphere and the asthenosphere, the upwelled mantle materials replaced and altered the lower lithosphere forming the metasome through the hot and chemical modifications impacted on the Craton lithosphere, and changed it into the lithosphere gradually, resulting in the lithospheric thinning. Thus, the lithospheric thinning is the result of the upwelling of the asthenosphere.