A feasible approach to optical-electrical hybrid data storage using phase change material
Data(s) |
2008
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Resumo |
We present our experimental results supporting optical-electrical hybrid data storage by optical recording and electrical reading using Ge2Sb2Te5as recording medium. The sheet resistance of laser- irradiated Ge2Sb2Te5. lms exhibits an abrupt change of four orders of magnitude ( from 10 7 to 10 3./ sq) with increasing laser power, current- voltage curves of the amorphous area and the laser- crystallized dots, measured by a conductive atomic force microscope ( C- AFM), show that their resistivities are 2.725 and 3.375 x 10- 3., respectively, the surface current distribution in the. lms also shows high and low resistance states. All these results suggest that the laser- recorded bit can be read electrically by measuring the change of electrical resistivity, thus making optical electrical hybrid data storage possible. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Sun Hua-Jun;Hou Li-Song;Wu Yi-Qun;Zhai Feng-Xiao.,Chin. Phys. Lett.,2008,25(8):2915-2917 |
Palavras-Chave | #光存储 |
Tipo |
期刊论文 |