Synthesis of novel functional polyolefin containing carboxylic acid via Friedel-Crafts acylation reaction

The strong polar group, carboxylic acid, has triumphantly been introduced into ethylene and allylbenzene copolymers without obvious degradation or crosslinking via Friedel-Crafts (F-C) acylation reaction with glutaric anhydride (GA), succinic anhydride (SA) and phthalic anhydride (PA) in the presence of anhydrous aluminum chloride in carbon disulfide. Some important reaction parameters were examined in order to optimize the acylation process. In the optimum reaction conditions, almost all of the phenyls can be acylated with any anhydride. The microstructure of acylated copolymer was characterized by Fr-IR, H-1 NMR and H-1-H-1 COSY. All the peaks of acylated copolymers can be accurately attributed, which indicates that all the acylation reactions occur only at the para-positions of the substituent of the aromatic rings. The thermal behavior was studied by differential scanning calorimetry (DSC), showing that the melting temperatures (T(m)s) of acylated copolymers with GA firstly decrease slowly and then increase significantly with the increase of the amount of carboxyl acid groups.

Synthesis of macrocyclic arylene ketone oligomers containing the phthaloyl moiety by Friedel-crafts acylation reaction

Two kinds of macrocyclic arylene ketone oligomers have been synthesized in high yield from phthaloyl dichloride and various bridge-linking electron-rich aromatic hydrocarbons via the modified Friedel-Crafts acylation reaction. The presence of a Lewis base in this reaction is demonstrated to be advantageous for forming macrocycle oligomers. These resultant oligomers can undergo melt ring-opening polymerization to give polymers with high T. and excellent thermal stability.

Friedel-crafts反应合成芳香环状齐聚物与开环聚合

芳香环状低聚物的合成是二十世纪八十年代末发展起来的研究领域，其特有的环状结构和可进行可控的开环聚合决定了芳香环状低聚物具有广阔的应用前景。本文从研究单体结构与成环反应的关系出发，开拓了一种合成芳香环状聚醚酮的新方法—改进的Friedel-Crafte反应法，采用该方法成功地合成了一系列新型结构的大环化合物，并首次利用流变仪对开环聚合过程中的流变行为进行了较为系统的观测。根据acoson-Stockmayer环化理论，应用基质辅助激光解吸离子化飞行时间质谱（MAIDL-TOF MS），对一系列芳香环状低聚物组分分布进行分析，研究了芳香环状低聚物的产率、组分分布与单体结构的关系。结果表明：芳香聚醋、聚麟酸醋及芳香聚醚环状低聚物系列中，InCn与1nn呈良好的线性关系，符合J-S理论分布。环状齐聚物的产率与组分分布受单体的中心键角影响，单体的中心键角在100°～120°范围内，其中心键角愈小，γ值愈大。γ值愈大，反应产物中小环化合物的含量越高，而小环化合物的含量的增加是高产率地合成环状齐聚物的前提之一。在此理论的指导下，通过对单体结构的模拟，高选择性地合成了一种新型结构的芳香环状聚硫醋二聚体，对其结构进行了精确的表征，在不同溶剂中得到了该环状二聚体的单晶，单晶X闪ray衍射表明该二聚体为环张力极小的大环化合物。基于上述理论，以有利于成环的邻苯二酞氯为酞基化试剂，对Friedel-Crafts酞基化反应在合成芳香环状齐聚物中的应用进行了系统研究，开拓了一种合成芳香环状预聚体的新方法—改进的Friedel-Crafts酞基化反应法。发现反应体系中Lewis碱的存在有利于选择性地形成环状产物。并进一步确定反应最佳条件为： Lewis碱和催化剂Alcl3与富电单体的摩尔比分别为1.2和3.4; 1,2-二氯乙烷为本反应的最佳溶剂；等当量的反应单体要求缓慢滴加到形成“假高稀”的溶剂体系中；Lewis碱NMP，DMF等都适用于本反应体系。在此优化条件下，以邻苯二酞氯和间苯二酞氯为酞基化试剂，室温下，合成了一系列芳香环状聚醚酮酮、聚醚酮、聚醚矾酮等新型结构的环状齐聚物，利用MALDI-TOF-MS，NMR，GPC，FTIR，DSC，元素分析等手段对环状结构进行了精确的表征；DSC分析表明含邻苯二拨基结构的环状齐聚物为无定型材料；部分产物的产率高达90％。在阴离子引发剂联苯双酚钾存在下，制备的环状齐聚物成功进行了熔融开环聚合，得到了相应结构的高分子量的线性开环聚合产物。其中，含邻苯二拨基结构的环状聚醚酮酮、环状聚醚酮矾的开环聚合产物的比浓粘度分别达到0.42dL／g，0.36 dL／g（0.5％的DMF溶液，25士0.1℃）；四种含间苯二锁基结构的环状齐聚物的开环聚合产物的Tg与常规亲电沉淀反应合成的线性高聚物的Tg相同。含侧甲基的开环聚合产物的Tg比对应的开环聚合的产物的Tg高约5℃。研究结果表明用亲电缩聚方法制备芳香环状聚醚酮与亲核缩聚法相比较，具有成本低廉、反应条件温和丫产率高、易于大规模制备等优势，开拓了一种制备环状化合物的方法。自从美国G.E.公司利用环状聚碳酸酷的开环聚合制备线性聚碳酸醋以来，对芳香环状低聚物的开环聚合过程的研究仅局限在由GPC监测反应某一时刻的产物的分子量，而缺乏对与应用更为接近的开环聚合中的粘度的变化的研究。本文以界面缩聚反应高产率地合成芳香环状双酚A聚酷二聚体为对象，研究了流变仪在开环聚合中的应用。利用流变仪对环状二聚体开环聚合过程进行了较为系统的观测，研究了不同条件下的开环聚合中的流变行为，结果表明，开环聚合存在引发期，而且在引发期，熔融体的粘度低于10Pa·S，超过引发期，粘度呈指数级增长。引发期的长短可以通过引发剂的种类、浓度、开环聚合的温度等条件进行有效地控制。芳香环状聚酷二聚体与环状聚碳酸醋的开环共聚合的流变行为的研究结果表明：开环共聚合可以降低开环聚合的温度，调整引发期，是提高聚合产物的分子量的有效途径。用流变仪对以改进的Friedel-Crafts反应合成的芳香环酮齐聚物的开环聚合中的流变行为进行了监控。在330℃，剪切速率为0.05S-l下，熔融的环状齐聚物的粘度为2.0Pa·S。通过对开环聚合的反应条件的控制，同样实现了开环聚合的可控，通过改变其开环聚合的引发期的长短及粘度的变化规律，可、适应不。条一定为加工设计与成型加工提供理论指导和模型设计，必将进一步推进开环聚合工 艺向应用方向的发展。

Liquid phase epitaxy growth of AlxGayIn1-x-yPzAs1-zGaAs with direct band gap up to 2.0 eV

III-V pentenary semiconductor AlGaInPAs with a direct band gap of up to 2.0 eV has been grown successfully on GaAs substrates by liquid phase epitaxy;(LPE). With the introduction of the energy bowing parameters of quaternaries, the theoretical calculations agree well with the measured PL peak energy data from pentenary samples.

Structural, Electrical, And Optical Properties Of Inasxsb1-X Epitaxial Films Grown By Liquid-Phase Epitaxy

The InAsxSb1-x films were grown on (100) GaSb substrates by liquid-phase epitaxy, and their structural, electrical, and optical properties were investigated. The high-resolution x-ray diffraction results reveal that the single crystalline InAsxSb1-x films with a midrange composition are epitaxially grown on the GaSb substrates. Temperature dependence of the Hall mobility was theoretically modeled by considering several predominant scattering mechanisms. The results indicate that ionized impurity and dislocation scatterings dominate at low temperatures, while polar optical phonon scattering is important at room temperature (RT). Furthermore, the InAsxSb1-x films with the higher As composition exhibit the better crystalline quality and the higher mobility. The InAs0.35Sb0.65 film exhibits a Hall mobility of 4.62x10(4) cm(2) V-1 s(-1). The cutoff wavelength of photoresponse is extended to about 12 mu m with a maximum responsivity of 0.21 V/W at RT, showing great potential for RT long-wavelength infrared detection. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2989116]

Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy

The Gal(1-x)Mn(x)Sb epilayer was prepared on the n-type GaSb substrate by liquid phase epitaxy. The structure of the Gal(1-x)Mn(x)Sb epilayer was analyzed by double-crystal X-ray diffraction. From the difference of the lattice constant between the GaSb substrate and the Ga1-xMnxSb epilayer, the Mn content in the Ga1-xMnxSb epilayer were calculated as x = 0.016. The elemental composition of Ga1-xMnxSb epilayer was analyzed by energy dispersive spectrometer. The carrier concentration was obtained by Hall measurement. The hole concentration in the Ga1-xMnxSb epilayer is 4.06 x 10(19)cm(-3). It indicates that most of the Mn atoms in Ga1-xMnxSb take the site of Ga, and play a role of acceptors. The current-voltage curve of the Ga1-xMnxSb/GaSb heterostructure was measured, and the rectifying effect is obvious. (C) 2003 Elsevier B.V. All rights reserved.

InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy

The growth of InAsxSb1-x films on (100) GaSb substrates by liquid-phase epitaxy (LPE) has been investigated and epitaxial InAs0.3Sb0.7 films with InAs0.9Sb0.09 buffer layers have been successfully obtained. The low X-ray rocking curve FHWM values of InAs0.3Sb0.7 layer shows the high quality of crystal-orientation structure. Hall measurements show that the highest electron mobility in the samples obtained is 2.9 x 10(4) cm(2) V-1 s(-1) and the carrier density is 2.78 x 10(16)cm(-3) at room temperature (RT). The In As0.3Sb0.7 films grown on (10 0) GaSb substrates exhibit excellent optical performance with a cut-off wavelength of 12 mu m. (c) 2007 Elsevier B.V. All rights reserved.

Preparation of crystalline beta barium borate thin films on Sr2+-doped alpha barium borate substrates by liquid phase epitaxy

Thin films of beta barium borate have been prepared by liquid phase epitaxy on Si2+-doped alpha-BaB2O4 (alpha-BBO, the high temperature phase of barium berate) (001) and (110) substrates. The results of X-ray diffraction indicate that the films show highly (001) preferred orientation on (001)-oriented substrates while the films grown on (110) substrates are textured with (140) orientation. The crystallinity of these films was found to depend on growth temperature, rotation rate, dip time and orientation of substrate. Growth conditions were optimized to grow films with (001) orientation on (001) substrates reproducibly. The films show second harmonic generation of 400 nm light upon irradiation with 800 nm Ti: Sapphire femtosecond laser light. (c) 2005 Elsevier B.V. All rights reserved.

Homoepitaxial growth of ZnO films via low-temperature liquid-phase epitaxy

Homoepitaxial ZnO films have been grown via liquid-phase epitaxy (LPE) on (000 1) oriented ZnO substrates. X-ray rocking curve revealed the high quality of the ZnO films with a FWHM of 40 arc sec. Films of thickness about 20 gm were gown in the temperature range 700-720 degrees C. The growth rate of ZnO films was estimated to be 0.3 mu m h(-1). Atomic force microscope analysis showed that the surface roughness of ZnO films was very low, which further confirmed the high crystallinity of ZnO films. (c) 2006 Elsevier B.V. All rights reserved.

Structural, electrical, and optical properties of InAsxSb1-x epitaxial films grown by liquid-phase epitaxy

The InAsxSb1-x films were grown on (100) GaSb substrates by liquid-phase epitaxy, and their structural, electrical, and optical properties were investigated. The high-resolution x-ray diffraction results reveal that the single crystalline InAsxSb1-x films with a midrange composition are epitaxially grown on the GaSb substrates. Temperature dependence of the Hall mobility was theoretically modeled by considering several predominant scattering mechanisms. The results indicate that ionized impurity and dislocation scatterings dominate at low temperatures, while polar optical phonon scattering is important at room temperature (RT). Furthermore, the InAsxSb1-x films with the higher As composition exhibit the better crystalline quality and the higher mobility. The InAs0.35Sb0.65 film exhibits a Hall mobility of 4.62x10(4) cm(2) V-1 s(-1). The cutoff wavelength of photoresponse is extended to about 12 mu m with a maximum responsivity of 0.21 V/W at RT, showing great potential for RT long-wavelength infrared detection. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2989116]

Liquid phase epitaxy of Al0.3Ga0.7As islands

Self-organized Al0.3Ga0.7As islands generated on the (100) facet are achieved by liquid phase epitaxy. Three particularly designed experimental conditions-partial oxidation, deficient solute and air quenching-result in defect-free nucleation. Micron-sized frustums and pyramids are observed by a scanning electron microscope. The sharp end of the tip has a radius of curvature less than 50 nm. It is proposed that such Al0.3Ga0.7As islands may be potentially serviceable in microscale and nanoscale fabrication and related spheres. (C) 2004 Elsevier B.V. All rights reserved.

Chemical liquid phase deposition of thin aluminum oxide films

Thin aluminum oxide films were deposited by a new and simple physicochemical method called chemical liquid phase deposition (CLD) on semiconductor materials. Aluminum sulfate with crystallized water and sodium bicarbonate were used as precursors for film growth, and the control of the system's pH value played an important role in this experiment. The growth rate is 12 nm/h with the deposition at [Al-2(SO4)(3)]=0.0837 mol.L-1, [NaHCO3]=0.214 mol.L-1, 15 degreesC. Post-growth annealing not only densifies and purifies the films, but results in film crystallization as well. Excellent quality of Al2O3 films in this work is supported by electron dispersion spectroscopy, Fourier transform infrared spectrum, X-ray diffraction spectrum and scanning electron microscopy photograph.

Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy

The Gal(1-x)Mn(x)Sb epilayer was prepared on the n-type GaSb substrate by liquid phase epitaxy. The structure of the Gal(1-x)Mn(x)Sb epilayer was analyzed by double-crystal X-ray diffraction. From the difference of the lattice constant between the GaSb substrate and the Ga1-xMnxSb epilayer, the Mn content in the Ga1-xMnxSb epilayer were calculated as x = 0.016. The elemental composition of Ga1-xMnxSb epilayer was analyzed by energy dispersive spectrometer. The carrier concentration was obtained by Hall measurement. The hole concentration in the Ga1-xMnxSb epilayer is 4.06 x 10(19)cm(-3). It indicates that most of the Mn atoms in Ga1-xMnxSb take the site of Ga, and play a role of acceptors. The current-voltage curve of the Ga1-xMnxSb/GaSb heterostructure was measured, and the rectifying effect is obvious. (C) 2003 Elsevier B.V. All rights reserved.

Silica and alumina thin films grown by liquid phase deposition

This work demonstrates the condition optimization during liquid phase deposition (LPD) Of SiO2/GaAs films. LPD method is further applied to form Al2O3 films on semiconductors with poison-free materials. Proceeding at room temperature with inexpensive equipment, LPD of silica and alumina films is potentially serviceable in microelectronics and related spheres.