Electro-optic integration of embedded electrodes and waveguides in LiNbO3 using a femtosecond laser

We describe the fabrication of a Mach-Zehnder optical modulator in LiNbO3 by femtosecond laser micormachining, which is composed of optical waveguides inscripted by a femtosecond laser and embedded microelectrodes subsequently using femtosecond laser ablation and selective electroless plating. A half-wave voltage close to 19 V is achieved at a wavelength of 632.8 nm with an interaction length of 2.6 mm. This simple and cost-effective technique opens up new opportunities for fabricating integrated electro-optic devices. (C) 2008 Optical Society of America

Structural Integration of Tellurium Oxide into Mixed-Network-Former Glasses: Connectivity Distribution in the System NaPO3–TeO2

FSodium phosphate tellurite glasses in the system (NaPO3)(x)(TeO2)(1-x) were prepared and structurally characterized by thermal analysis, vibrational spectroscopy, X-ray photoelectron spectroscopy (XPS) and a variety of complementary solid-state nuclear magnetic resonance (NMR) techniques. Unlike the situation in other mixed-network-former glasses, the interaction between the two network formers tellurium oxide and phosphorus oxide produces no new structural units, and no sharing of the network modifier Na2O takes place. The glass structure can be regarded as a network of interlinked metaphosphate-type P(2) tetrahedral and TeO4/2 antiprismotic units. The combined interpretation of the O 1s XPS data and the P-31 solid-state NMR spectra presents clear quantitative evidence for a nonstatistical connectivity distribution. Rather the formation of homootomic P-O-P and Te-O-Te linkages is favored over mixed P-O-Te connectivities. As a consequence of this chemical segregation effect, the spatial sodium distribution is not random, as also indicated by a detailed analysis of P-31/No-23 rotational echo double-resonance (REDOR) experiments. ACHTUNGTRENUNG(TeO2)1 x were prepared and structurally characterized by thermal analysis,vibrat ional spectroscopy,X-ray photoelectron spectroscopy (XPS) and a variety of complementary solid-state nuclear magnetic resonance (NMR) techniques. Unlike the situation in other mixed-network-former glasses,the interaction between the two network formers tellurium oxide and phosphorus oxide produces no new structural units,and no sharing of the network modifier Na2O takes place. The glass structure can be regarded as a network of interlinked metaphosphate-type P(2) tetrahedral and TeO4/2 antiprismatic units. The combined interpretation of the O 1s XPS data and the 31P solid-state NMR spectra presents clear quantitative evidence for a nonstatistical connectivity distribution. Rather,the formation of homoatomic P O P and Te O Te linkages is favored over mixed P O Te connectivities. As a consequence of this chemical segregation effect,the spatial sodium distribution is not random,as also indicated by a detailed analysis of 31P/23Na rotational echo double-resonance (REDOR) experiments.

Cytological Mechanism on the Integration of Heterologous Genome or Chromosomes in the Unique Gynogenetic Carassius auratus gibelio

银鲫（ＣａｒａｓｉｕｓａｕｒａｔｕｓｇｉｂｅｌｉｏＢｌｏｃｈ）是行天然雌核发育生殖的两性型三倍体鱼类，与普通两性融合生殖鱼类相比，具有独特的育种优势。八十年代以来，异育银鲫、复合四倍体异育银鲫的发现表明，雌核发育卵子不但具有保持自身全部染色体的能力，还能整合异源精子的部分遗传物质或整个基因组，影响雌核发育后代的性状。因此，搞清楚异源基因组的整合机制对于进一步弄清其发育模式以及诱导复合多倍体银鲫均具有十分重要的作用。两性融合发育鱼类的精子入卵后，精核在促精核活化因子的诱导下，可以逐渐解凝并形成雄性原核；而在

Integration of double-fluorescence expression vectors into zebrafish genome for the selection of site-directed knockout/knockin

Production of zebrafish by modifying endogenous growth hormone (GH) gene through homologous recombination is described here. We first constructed the targeting vectors pGHT1.7k and pGHT2.8k, which were used for the knockout/knockin of the endogenous GH gene of zebrafish, and injected these two vectors into the embryos of zebrafish. Overall, the rate of targeted integration with the characteristic of germ line transmission in zebrafish was 1.7x10(-6). In one experimental patch, the integrating efficiency of pGHT2.8k was higher than that of pGHT1.7k, but the lethal effect of pGHT2.8k was stronger than that of pGHT1.7k. The clones with the correct integration of target genes were identified by a simple screening procedure based on green fluorescent protein (GFP) and RFP dual selection, which corresponded to homologous recombination and random insertion, respectively. The potential homologous recombination zebrafish was further bred to produce a heterozygous F-1 generation, selected based on the presence of GFP. The potential targeted integration of exogenous GH genes into a zebrafish genome at the P-0 generation was further verified by polymerase chain reaction and Southern blot analysis. Approximately 2.5% of potential founder knockout and knockin zebrafish had the characteristic of germ line transmission. In this study, we developed an efficient method for producing the targeted gene modification in zebrafish for future studies on genetic modifications and gene functions using this model organism.

Monolithic integration of sampled grating DBR with electroabsorption modulator by combining selective-area-growth MOCVD and quantum-well intermixing

We present the monolithic integration of a sampled-grating distributed Bragg reflector (SC-DBR) laser with a quantum-well electroabsorption modulator (QW-EAM) by combining ultra-low-pressure (55 mbar) selective-area-growth (SAG) metal-organic chemical vapour deposition (MOCVD) and quantum-well intermixing (QWI) for the first time. The QW-EAM and the gain section can be grown simultaneously by using SAG MOCVD technology. Meanwhile, the QWI technology offers an abrupt band-gap change between two functional sections, which reduces internal absorption loss. The experimental results show that the threshold current I-th = 62 mA, and output power reaches 3.6 mW. The wavelength tuning range covers 30 nm, and all the corresponding side mode suppression ratios are over 30 dB. The extinction ratios at available wavelength channels can reach more than 14 dB with bias of -5 V.

Design of novel three port optical gates scheme for the integration of large optical cavity electroabsorption modulators and evanescently-coupled photodiodes

This paper presents a novel scheme to monolithically integrate an evanescently-coupled uni-travelling carrier photodiode with a planar short multimode waveguide structure and a large optical cavity electroabsorption modulator based on a multimode waveguide structure. By simulation, both electroabsorption modulator and photodiode show excellent optical performances. The device can be fabricated with conventional photolithography, reactive ion etching, and chemical wet etching.

Integration of a photonic crystal polarization beam splitter and waveguide bend

In this work, we present the design of an integrated photonic-crystal polarization beam splitter (PC-PBS) and a low-loss photonic-crystal 60 waveguide bend. Firstly, the modal properties of the PC-PBS and the mechanism of the low-loss waveguide bend are investigated by the two-dimensional finite-difference time-domain (FDTD) method, and then the integration of the two devices is studied. It shows that, although the individual devices perform well separately, the performance of the integrated circuit is poor due to the multi-mode property of the PC-PBS. By introducing deformed airhole structures, a single-mode PC-PBS is proposed, which significantly enhance the performance of the circuit with the extinction ratios remaining above 20dB for both transverse-electric (TE) and transverse-magnetic (TM) polarizations. Both the specific result and the general idea of integration design are promising in the photonic crystal integrated circuits in the future. (C) 2009 Optical Society of America

Monolithic integration of an InGaAsP-InP strained DFB laser and an electroabsorption modulator by ultra-low-pressure selective-area-growth MOCVD

The design and basic characteristics of a strained InGaAsP-InP multiple-quantum-well (MQW) DFB laser monolithically integrated with an electroabsorption modulator (EAM) by ultra-low-pressure (22 mbar) selective-area-growth (SAG) MOCVD are presented. A fundamental study of the controllability and the applicability of band-gap energy by using the SAG, method is performed. A large band-gap photoluminescence wavelength shift of 88 mn. was obtained with a small mask width variation (0-30 mu m). The technique is then applied to fabricate a high performance strained MQW EAM integrated with a DFB laser. The threshold current of 26 mA at CW operation of the device with DFB laser length of 300 mu m and EAM length of 150 mu m has been realized at a modulator bias of 0 V. The devices also exhibit 15 dB on/off ratio at an applied bias voltage of 5 V.

A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor

This paper reports that the structures of AlGaAs/InGaAs high electron mobility transistor (HEMT) and AlAs/GaAs resonant tunnelling diode (RTD) are epitaxially grown by molecular beam epitaxy ( MBE) in turn on a GaAs substrate. An Al0.24Ga0.76As chair barrier layer, which is grown adjacent to the top AlAs barrier, helps to reduce the valley current of RTD. The peak-to-valley current ratio of fabricated RTD is 4.8 and the transconductance for the 1-mu m gate HEMT is 125mS/mm. A static inverter which consists of two RTDs and a HEMT is designed and fabricated. Unlike a conventional CMOS inverter, the novel inverter exhibits self-latching property.

Monolithic integration of electroabsorption modulator and DFB laser for 10-Gb/s transmission

A strained InGaAsP-InP multiple-quantum-well DFB laser monolithically integrated with electroabsorption modulator by ultra-low-pressure (22 mbar) selective-area-growth is presented. The integrated chip exhibits superior characteristics, such as low threshold current of 19 mA, single-mode operation around 1550 nm range with side-mode suppression ratio over 40 dB, and larger than 16 dB extinction ratio when coupled into a single-mode fiber. More than 10 GHz modulation bandwidth is also achieved. After packaged in a compact module, the device successfully performs 10-Gb/s NRZ transmission experiments through 53.3 km of standard fiber with 8.7 dB dynamic extinction ratio. A receiver sensitivity of -18.9 dBm at bit-error-rate of 10(-1)0 is confirmed. (c) 2005 Elsevier B.V. All rights reserved.

Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate

We successfully used the metal mediated-wafer bonding technique in transferring the as-grown cubic GaN LED structure of Si substrate. The absorbing GaAs substrate was removed by using the chemical solutions of NH4OH : H2O2=1 : 10. SEM and PL results show that wafer bonding technique could transfer the cubic GaN epilayers uniformly to Si without affecting the physical and optical properties of epilayers. XRD result shows that there appeared new peaks related to AgGa2 and Ni4N diffraction, indicating that the metals used as adhesive and protective layers interacted with the p-GaN layer during the long annealing process. It is just the reaction that ensures the reliability of the integration of GaN with metal and minor contact resistance on the interface.

Photonic switch and NOT logic gate based on the hybrid integration of a GaAsVCSEL and a GaAs MISS

The hybrid integrated photonic switch and not logic gate based on the integration of a GaAs VCSEL (Vertical Cavity Surface Emitting Lasers) and a MISS (Metal-Insulator-Semiconductor Switches) device are reported. The GaAs VCSEL is fabricated by selective etching and selective oxidation. The Ultra-Thin semi-Insulating layer (UTI) of the GaAs MISS is formed by using oxidation of A1As that is grown by MBE. The accurate control of UTI and the processing compatibility between VCSEL and MISS are solved by this procedure. Ifa VCSEL is connected in series with a MISS, the integrated device can be used as a photonic switch, or a light amplifier. A low switching power (10 mu W) and a good on-off ratio (17 dB contrast) have been achieved. If they are connected in parallel, they perform a photonic NOT gate operation.

Monolithic Integration of Light Emitting Diodes, Photodetector and Receiver Circuit in Standard CMOS Technology

A monolithic silicon CMOS optoelectronic integrated circuit (OEIC) is designed and fabricated with standard 0.35 mu m CMOS technology. This OEIC circuit consists of light emitting diodes (LED), silicon dioxide waveguide, photodiodes and receiver circuit. The silicon LED operates in reverse breakdown mode and can be turned on at 8.5V 10mA. The silicon dioxide waveguide is composed of multiple layers of silicon dioxide between different metals layers. A two PN-junctions photodetector composed of n-well/p-substrate junction and p(+) active implantation/n-well junction maximizes the depletion region width. The readout circuitry in pixels is exploited to handle as small as 0.1nA photocurrent. Simulation and testing results show that the optical emissions powers are about two orders higher than the low frequency detectivity of silicon CMOS photodetcctor and receiver circuit.

Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators

We report on chip-scale optical gates based on the integration of evanescent waveguide unitraveling-carrier photodiodes (EC-UTC-PDs) and intra-step quantum well electroabsorption modulators (IQW-EAMs) on n-InP substrates. These devices exhibit simultaneously 2.1 GHz and -16.2 dB RF-gain at 21 GHz with a 450 Omega thin-film resistor and a bypass capacitor integrated on a chip.