173 resultados para III-V NITRIDE
em Chinese Academy of Sciences Institutional Repositories Grid Portal
Resumo:
Excitonic states in AlxGa1-xN/GaN quantum wells (QWs) are studied within the framework of effective-mass theory. Spontaneous and piezoelectric polarizations are included and their impact on the excitonic states and optical properties are studied. We witnessed a significant blue shift in transition energy when the barrier width decreases and we attributed this to the redistribution of the built-in electric field between well layers and barrier layers. For the exciton the binding energies, we found in narrow QWs that there exists a critical value for barrier width, which demarcates the borderline for quantum confinement effect and the quantum confined Stark effect. Exciton and free carrier radiative lifetimes are estimated by simple argumentation. The calculated results suggest that there are efficient non-radiative mechanisms in narrow barrier QWs. (C) 2002 Elsevier Science Ltd. All rights reserved.
Resumo:
A theoretical model accounting for the macropolarization effects in wurtzite III-V nitrides quantum wells (QWs) is presented. Energy dispersions and exciton binding energies are calculated within the framework of effective-mass theory and variational approach, respectively. Exciton-associated transitions (EATs) are studied in detail. An energy redshift as high as 450 meV is obtained in Al0.25GaN0.75/GaN QWs. Also, the abrupt reduction of optical momentum matrix elements is derived as a consequence of quantum-confined Stark effects. EAT energies are compared with recent photoluminescence (PL) experiments and numerical coherence is achieved. We propose that it is the EAT energy, instead of the conduction-valence-interband transition energy that is comparable with the PL energy. To restore the reduced transition rate, we apply an external electric field. Theoretical calculations show that with the presence of the external electric field the optical matrix elements for EAT increase 20 times. (C) 2001 American Institute of Physics.
Resumo:
We report experiments on high de current stressing in commercial III-V nitride based heterojunction light-emitting diodes. Stressing currents ranging from 100 mA to 200 mA were used. Degradations in the device properties were investigated through detailed studies of the current-voltage (I-V) characteristics, electroluminescence, deep-level transient Fourier spectroscopy and flicker noise. Our experimental data demonstrated significant distortions in the I-V characteristics subsequent to electrical stressing. The room temperature electro-luminescence of the devices exhibited a 25% decrement in the peak emission intensity. Concentration of the deep-levels was examined by deep-level transient Fourier spectroscopy, which indicated an increase in the density of deep-traps from 2.7 x 10(13) cm(-3) to 4.2 x 10(13) cm(-3) at E-1 = E-C - 1.1 eV. The result is consistent with our study of 1/f noise, which exhibited up to three orders of magnitude increase in the voltage noise power spectra. These traps are typically located at energy levels beyond the range that can be characterized by conventional techniques including DLTS. The two experiments, therefore, provide a more complete picture of trap generation due to high dc current stressing.
Resumo:
We report experiments on hot-electron stressing in commercial III-V nitride based heterojunction fight-emitting diodes. Stressing currents ranging from 100 mA to 200 mA were used. Degradations in the device properties were investigated through detailed studies of the I-V characteristics, electroluminescence, Deep-Level Transient Fourier Spectroscopy and flicker noise. Our experimental data demonstrated significant distortions in the I-V characteristics. The room temperature electroluminescence of the devices exhibited 25% decrement in the peak emission intensity. Concentration of the deep-levels was examined by measuring the Deep-Level Transient Fourier Spectroscopy, which indicated an increase in the density of deep-traps from 2.7 x 10(13) cm(-3) to 4.21 x 10(13) cm(-3) at E-1 = E-C - 1.1eV. The result is consistent with our study of 1/f noise, which exhibited up to three orders of magnitude increase in the voltage noise power spectra. Our experiments show large increase in both the interface traps and deep-levels resulted from hot-carrier stressing.
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Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z
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Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z
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Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z
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Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z
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Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z
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Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z
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Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z
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Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z
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Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z
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Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z
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Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z