Si（111）衬底上IBE法外延生长β-FeSi2薄膜的研究

于2010-11-23批量导入

Subsurface damage in optical substrates

The origin, character, analysis and treatment of subsurface damage (SSD) were summarized in this paper. SSD, which was introduced to substrates by manufacture processes, may bring about the decrease of laser-induced damage threshold (LIDT) of substrates and thin films. Nondestructive evaluation (NDE) methods for the measurement of SSD were used extensively because of their conveniences and reliabilities. The principle, experimental setup and some other technological details were given for total internal reflection microscopy (TIRM), high-frequency scanning acoustic microscopy (HFSAM) and laser-modulated scattering (LMS). However, the spatial resolution, probing depth and theoretic models of these NDE methods demanded further studies. Furthermore, effective surface treatments for minimizing or eliminating SSD were also presented in this paper. Both advantages and disadvantages of ion beam etching (IBE) and magnetorheological finishing (MRF) were discussed. Finally, the key problems and research directions of SSD were summarized. (c) 2005 Elsevier GmbH. All rights reserved.

Identification of induced reaction during XPS depth profile measurements of CeO2/Si films grown by ion beam epitaxy

An anomalous behavior was observed in X-ray photoelectron Spectroscopy (XPS) depth profile measurements conducted on CeO2/Si epilayers grown by ion beam epitaxy (IBE): the signals of Ce3+ and Ce4+ co-exist, and the ratio between them increases during the etching time and then tends to maintain a constant level before increasing again. The results of X-ray Diffraction (XRD), Auger Electron Spectroscopy (AES), and Rutherford Back-Scattering (RES) measurements proved that the reduction chemical reaction of CeO2 is induced by ion-etching. (C) 1998 Elsevier Science Ltd. All rights reserved.

Mechanism of induced reaction during XPS depth profile measurements of CeO2/Si films grown by ion beam epitaxy

In a search for the mechanism of the induced reduction reaction that occurred in X-ray photoelectron Spectroscopy (XPS) depth profiles measured experimentally on CeO2/Si epilayers grown by ion beam epitaxy (IBE), several possibilities have been checked. The first possibility, that the X-ray induces the reaction, has been ruled out by experimentation. Other possible models for the incident-ion induced reaction, one based on short-range interaction (direct collision) and the other based on long-range potential accompanied with the incident-ions, have been tested by simulation on computer. The results proved that the main mechanism is the former, not the latter. (C) 1998 Elsevier Science Ltd. All rights reserved.

稀土功能薄膜的离子束外延法制备生长研究

介绍了一种利用离子束外延（Ion-beam Epitaxy, IBE）技术制备生长高纯稀土功能薄膜的新方法. 以纯度要求不高的低成本稀土氯化物为原材料来产生大束流稀土元素离子, 通过准确控制双束合成或单束浅结注入掺杂的同位素纯低能离子的能量、束斑形状、沉积剂量与配比及生长温度, 在超高真空生长室内实现了稀土功能薄膜的高纯生长和低温优质外延. 文中除了对新方法的技术特点、实施方式和应注意的关键技术进行了阐述, 还结合CeO2, Gd2O3, GdxSi1-x等薄膜的制备研究, 讨论了离子的束流密度、剂量配比、能量和生长温度等生长参数对成膜质量的影响.

离子束外延β-FeSi_2/Si薄膜的电子能谱研究和表征

用电子能谱分析方法对低能离子束外延(IBE)生长的β-FeSi_2进行了详细研究，并对其电子能谱进行了表征。实测出XPS价带谱与有关理论计算结果相符，用XPS价带谱来表征β-FeSi_2比光电子峰更为清晰、可取。同时，对样品纵向分析表明界面处存在有较厚的过渡层。根据分析结果对低能IBE生长机理进行了探讨。经研究认为:Fe,Si通过空位机制进行的增强互扩散，在高温下生长出与Si晶格相匹配的β-FeSi_2。

对离子束外延氧化铈/硅热处理行为的初步研究

对不同的O,Ce束流比条件下用离子束外延(IBE)方法生长的氧化铈/硅薄膜在热处理前和在干氧气氛中经不同温度热退火后进行了俄歇电子能谱(AES)深度部剖析测量。结果显示出在Si衬底上生长的具有正化学配比的CeO_2和铈的低价氧化物具有明显不同的热处理行为，对与此有关物理过程作了初步探讨。结果还表明IBE CeO_2/Si结构经高温处理后在界面上形成了一层SiO_2,而外延层内的化学配比可接近正常值，从而显示出该材料工作温度尚可提高的可能性。

重离子辐照诱导的DNA双链断裂研究

目的：重离子辐射生物学效应机理和哺乳动物细胞对重离子的辐射敏感性机理在目前仍颇有争议，是辐射生物学研究的热点。材料与方法：采用兰州重离子研究装置(HIRFL)加速的碳、氧、氩等重离子辐照体外培养的贴壁细胞，以集落法测定细胞的存活率；辐照琼脂糖包埋的细胞样品或DNA样品，以脉冲场凝胶电泳(PFGE)分析辐照诱导的DNA双链断裂(DSB)。结果：1．DNA片段释放百分比(PR)值随着剂量的增加而增加，在超过一定剂量后趋于一个准阈值；而DNA断裂水平与剂量之间呈线性关系，DSB产额为O.19-1.55DSBs/100Mbp/Gy；以~(60)Co γ射线为参照，得到重离子辐照诱导DSB的相对生物效率(RBE)为0.73-2.72。2．剂量率是影响DSB诱导及其片段分布的因素之一，剂量率越大，DSB产额越高，DSB诱导截面越大。但剂量率低可以使片段的非随机分布更为明显。3．重离子辐照诱导的DSB可以修复，修复方式主要是小片段连接成大的片段。4．无论是~(60)Coγ射线，还是碳、氧、氩等重离子，直接辐照DNA分子和辐照完整细胞诱导DSB的比值为1.64-2.64。说明细胞组分对DNA分子有一定的保护作用。5．辐照DNA分子诱导DSB的RBE随传能线密度(LET)的变化而变化，但IBE最大值远小于细胞失活的RBE最大值。结论：1．重离子辐照DNA分子诱导的DSB初始产额与细胞失活机理之间有一定的联系，但以此来解释细胞失活还不够充分；而不可修复的DSB才是细胞失活最主要的原因。2．细胞对重离子的辐射敏感性与DSB初始产额的关系不明显，但与细胞对DSB的修复能力高低密切相关。3．重离子辐照诱导的DSB片段是非随机分布的，其产生与DNA序列有关，即DNA分子上存在对重离子辐照敏感的位点。重离子辐照沉积的能量可以直接或间接地沿DNA链迁移，从而使得DNA分子上相对较弱或亲电性较强的化学键优先断裂。敏感位点即这些相对较弱或亲电性较强的化学键，而这 种化学键的产生是与敏感位点邻近的几个核苷酸相互作用的结果，即敏感位点应该是一段DNA序列。