Identified particle production, azimuthal anisotropy, and interferometry measurements in Au plus Au collisions at root s(NN)=9.2 GeV

We present the first measurements of identified hadron production, azimuthal anisotropy, and pion interferometry from Au + Au collisions below the nominal injection energy at the BNL Relativistic Heavy-Ion Collider (RHIC) facility. The data were collected using the large acceptance solenoidal tracker at RHIC (STAR) detector at root s(NN) = 9.2 GeV from a test run of the collider in the year 2008. Midrapidity results on multiplicity density dN/dy in rapidity y, average transverse momentum < p(T)>, particle ratios, elliptic flow, and Hanbury-Brown-Twiss (HBT) radii are consistent with the corresponding results at similar root s(NN) from fixed-target experiments. Directed flow measurements are presented for both midrapidity and forward-rapidity regions. Furthermore the collision centrality dependence of identified particle dN/dy, < p(T)>, and particle ratios are discussed. These results also demonstrate that the capabilities of the STAR detector, although optimized for root s(NN) = 200 GeV, are suitable for the proposed QCD critical-point search and exploration of the QCD phase diagram at RHIC.

气源分子束外延生长SiGe/Si材料的性质及HBT器件应用

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

SiGe/Si 射频功率HBT 器件的研制

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD

AlGaN/GaN npn heterojunction bipolar transistor structures were grown by low-pressure MOCVD. Secondary ion mass spectroscopy (SIMS) measurements were carried out to study the Mg memory effect and redistribution in the emitter-base junction. The results indicated that there is a Mg-rich film formed in the ongrowing layer after the Cp2Mg source is switched off. The Mg-rich film can be confined in the base section by switching off the Cp2Mg source for appropriate time before the end of base growth. Low temperature growth of the undoped GaN spacer suppresses the Mg redistribution from Mg rich film. The delay rate of the Mg profile in sample C with spacer growing in low temperature is about 56 nm/decade, which becomes sharper than 80 nm/decade of the samples A and B without low temperature spacer. (C) 2005 Elsevier Ltd. All rights reserved.

Simple method for estimating minimum bend radii of SOI single mode curved rib waveguides

A simple method based on the effective index method was used to estimate the minimum bend radii of curved SOI waveguides. An analytical formula was obtained to estimate the minimum radius of curvature at which the mode becomes cut off due to the side radiative loss.

The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure

An AlGaN/GaN HBT structure was grown by low-pressure metalorganic chemical vapor deposition (MOCVD) on sapphire substrate. From the high-resolution x-ray diffraction and transmission electron microscopy (TEM) measurements, it was indicated that the structure is of good quality and the AlGaN/GaN interfaces are abrupt and smooth. In order to obtain the values of Si doping and electronic concentrations in the AlGaN emitter and GaN emitter cap layers, Secondary Ion Mass Spectroscopy (SIMS) and electrochemical CV measurements were carried out. The results showed that though the flow rate of silane (SiH4) in growing the AlGaN emitter was about a quarter of that in growing GaN emitter cap and subcollector layer, the Si sputtering yield in GaN cap layer was much smaller than that in the AlGaN emitter layer. The electronic concentration in GaN was about half of that in the AlGaN emitter layer. It is proposed that the Si, Al co-doping in growing the AlGaN emitter layer greatly enhances the Si dopant efficiency in the AlGaN alloy. (c) 2006 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim.

Ge组分对SiGe HBT直流特性的影响

制作了基区Ge组分分别为0.20和0.23的多发射极指数双台面结构SiGe异质结双极型晶体管(HBT).实验结果表明,基区Ge组分的微小增加,引起了较大的基极复合电流,但减小了总的基极电流,提高了发射结的注入效率,电流增益成倍地提高.Ge组分从0.20增加到0.23,HBT的最大直流电流增益从60增加到158,提高了约2.6倍.

GSMBE生长的用于研制HBT的SiGe/Si异质结材料

用GSMBE法生长了Si/SiGe/Si异质结构材料。采用双台面结构制造了SiGe/Si NPN异质结晶体管。在发射结条宽为4μm，面积为4μm×18μm的条件下，其共发射极直流放大倍数为75，截止频率为20GHz。给出了结构设计、材料生长和器件制作工艺。

Anomaly in the charge radii and nuclear structure

The axially deformed relativistic mean field theory is applied to study the isotope shift of charge distributions of odd-Z Pr isotope chain. The nuclear structure associated with the shell and the isotope effect is investigated. The mechanism of link in the isotope shift at the neutron magic number N = 82 is revealed to be dependent on the neutron energy level structure at the Fermi energy, demonstrating that the spin-orbit coupling interaction and p-n attraction are well described by the relativistic mean field theory.

Crystal Radii and Their Application on the Study of Electronic Structures of LaX(X=N,P,As,Sb)

以Ｐｈｉｌｉｐｓ－ＶａｎＶｅｃｈｔｅｎ理论和晶体光学性质为基础，计算了ＬａＸ（Ｘ＝Ｎ，Ｐ，Ａｓ，Ｓｂ）晶体的离子半径（单位：ｎｍ）：（Ｌａ：Ｎ）为（０．１４１４，０．１２３６），（Ｌａ：Ｐ）为（０．１５１８，０．１４８９），（Ｌａ：Ａｓ）为（０．１５３６，０．１５２６），（Ｌａ：Ｓｂ）为（０．１５８６，０．１６５１）．用ＬＭＴＯ－ＡＳＡ方法对ＬａＸ系列晶体的能带结构进行了计算．所得到的能隙是：ＬａＮ为２．３０ｅＶ，ＬａＰ为２．０５ｅＶ，ＬａＡｓ为１．６６ｅＶ，ＬａＳｂ为１．３４ｅＶ．与实验结果相符．这也证明了作者得到的半径的合理性.

Thermocapillary flow in an annular liquid layer painted on a moving fiber

In the present paper, a theoretical model is studied on the flow in the liquid annular film, which is ejected from a vessel with relatively higher temperature and painted on the moving solid fiber. A temperature gradient, driving a thermocapillary flow, is formed on the free surface because of the heat transfer from the liquid with relatively higher temperature to the environmental gas with relatively lower temperature. The thermocapillary flow may change the radii profile of the liquid film. This process analyzed is based on the approximations of lubrication theory and perturbation theory, and the equation of the liquid layer radii and the process of thermal hydrodynamics in the liquid layer are solved for a temperature distribution on the solid fiber.

Calculations of longitudinal and transverse velocity structure functions using a vortex model of isotropic turbulence

The longitudinal structure function (LSF) and the transverse structure function (TSF) in isotropic turbulence are calculated using a vortex model. The vortex model is composed of the Rankine and Burgers vortices which have the exponential distributions in the vortex Reynolds number and vortex radii. This model exhibits a power law in the inertial range and satisfies the minimal condition of isotropy that the second-order exponent of the LSF in the inertial range is equal to that of the TSF. Also observed are differences between longitudinal and transverse structure functions caused by intermittency. These differences are related to their scaling differences which have been previously observed in experiments and numerical simulations.