Approximate analytical description for fundamental-mode fields of graded-index fibers: Beyond the Gaussian approximation

An approximate analytical description for fundamental-mode fields of graded-index fibers is explicitly presented by use of the power-series expansion method, the maximum-value condition at the fiber axis, the decay properties of fundamental-mode fields at large distance from the fiber axis, and the approximate modal parameters U obtained from the Gaussian approximation. This analytical description is much more accurate than the Gaussian approximation and at the same time keep the simplicity of the latter. As two special examples, we present the approximate analytical formulas for the fundamental-mode fields of a step profile fiber and a Gaussian profile fiber, and we find that they are both highly accurate in the single-mode range by comparing them with the corresponding exact solutions.

Beam collimation of high-power laser diode array with graded-index fiber lens array

Graded-index (GRIN) fiber lens arrays are fabricated from commercial GRIN fibers to collimate a high-power laser diode array. The beam divergence angles are reduced to 4.2 and 14.7 mrad in the fast and slow axes, respectively. The influences of smile and fluctuation in fiber length are discussed. Using an aspherical focal lens system, about 74% power can be launched into a fiber with a numerical aperture (NA) of 0.22 and a core diameter of 400 mu m. (c) 2008 Society of Photo-Optical Instrumentation Engineers.

Graded index 532HR/1064HT filter by glancing angle deposition

Glancing angle deposition is a novel method to prepare graded index coatings. By using this method and physical vapour deposition, ZrO2 is used to engineer graded index filter on BK7 glass substrate. Controlling the deposition rate and the periodic oscillation of oblique angle of deposited material, a 10-period graded index ZrO2 filter with high reflection near 532 nm and high transmittance at wavelength 1064 nm is fabricated. The causes of difference between the theoretical and experimental results are discussed in detail. The material properties and electron gun nonlinearity are possibly the main origins of the difference, which result in the variations in both thickness control and deposition rate of the Elm material.

GAAS/GAALAS GRADED INDEX SEPARATE CONFINEMENT SINGLE QUANTUM-WELL SINGLE-MODE WAVE-GUIDE ELECTROABSORPTION LIGHT-MODULATOR

A GaAs/GaAlAs graded-index separate confinement single quantum well heterostructure single-mode ridge waveguide electroabsorption modulator was fabricated and investigated. For the modulator with a quantum well width of 100 angstrom and device length of 700-mu-m, an on/off ratio of 29.7 dB and estimated absorption insertion loss of 3 dB were obtained for TE polarised light with wavelength 8650 angstrom, and for TM polarisation the on/off ratio was 28.5 dB. With a switching voltage of 1 V, an on/off ratio of 15 dB was achieved. Photocurrent spectra exhibited a red shift of 600 angstrom of the absorption edge when the voltage applied to the PIN diode was varied from 0.5 to -7 V. The corresponding shift of the room temperature exciton peak energy was 96 meV.

Planar waveguides formed in a new chemically stable Er3+/Yb3+ co-doped phosphate glass

A new Er(3+)/Yb(3+) co-doped phosphate glass has been prepared, which exhibits good chemical durability and spectralproperties. Planar graded index waveguides have been fabricated in the glass by (Ag+)-Na(+) ion exchange in a mixed melt of silver nitrate and potassium nitrate. Ion exchange is carried out by varying the process parameters such as temperature, diffusion time, and molten salt compositions. The diffusion parameters, diffusion coefficients, and activation energy are determined by the guidelines of fabricated waveguides, which are determined by the input prism coupling technique.

斜角入射沉积法制备渐变折射率薄膜的理论探讨

从理论上分析了单一膜料倾斜入射沉积时的折射率与填充密度的关系，给出了三种不同的表达式；然后从正变和负变、完整周期和存在半周期以及不同的周期数等几个方面探讨了膜层的填充密度按照线性变化时的渐变折射率薄膜的光学特性，并将折射率的不同理论表达式对光学特性的影响进行了对比，最后讨论了单一膜料倾斜入射沉积渐变折射率薄膜的方法、填充密度线性变化时的渐变折射率薄膜的应用及制备中需要进一步解决和处理的问题．

共蒸法制备非均匀膜的速率控制分析

渐变折射率薄膜，又称为非均匀膜。利用德鲁德理论分析了混合介质膜的介电常量与各个膜料的介电常量之间的关系，介绍了共蒸法制备非均匀膜的制备机理。对混合膜的沉积速率为两种膜料的沉积速率之和的情况，分别从两种膜料的单分子体积是否相等和总的沉积速率是否为常数两个方面，探讨了双源共蒸法制备的非均匀膜的折射率分布规律与膜料的沉积速率之间的关系，并给出了几种常见的折射率分布如线性变化、正弦变化、指数变化和双曲变化规律的膜料沉积速率表达式。最后以混合介质膜的总沉积速率为常数、折射率按照线性变化为例进行了说明。

Wideband antireflection film fabricated by glancing angle deposition

Graded-index ZrO2 films has been fabricated on K9 glass by glancing angle deposition. Because the index mismatch at the interface has been reduced, the film results in wideband high-transmission antireflection. From 400nm to 1200nm, the film reflection is lower than 0.8% and the lowest value is 0.2% at 432nm.

斜角入射沉积法制备渐变折射率薄膜的折射率分析

斜角入射沉积法是一种制备薄膜的新颖方法，它可以用来制备渐变折射率薄膜．本文首先探讨了膜料的沉积入射角为α，薄膜柱状生长倾斜角为β时的薄膜的填充系数；之后利用drude理论，分析研究了斜角入射沉积法制备渐变折射率薄膜的折射率与薄膜的入射角和生长方向的关系．

周期性梯度折射率多层膜的软X射线反射率

由于界面互扩散的存在，实际的超薄多层膜很难具有清晰的界面结构，假设超薄多层膜为具有周期性梯度折射率的多层膜结构，用直线模型和余弦模型模拟了周期性梯度折射率多层膜的软X射线反射率，结果证明，折射率余弦渐变的多层膜虽然不具有清晰的界面，但它同样具有很高的反射率。

线性共蒸法制备非均匀膜的误差特性模拟分析

对双源线性共蒸法制备的非均匀薄膜折射率分布与光学特性的关系作了探讨，并与均匀介质膜的光学特性作了对比；从折射率正变和负变两个方面．讨论了混合介质膜折射率不同变化规律对光学性能带来的影响；讨论了厚度误差和折射率极值误差对非均匀膜光学性能的影响。结果发现：折射率变化规律误差主要对非均匀膜的应用波段范围产生影响，而膜层厚度误差和折射率极值误差超过一定值时，将对薄膜光学特性产生重要影响。

渐变折射率薄膜的分层评价探讨

首先阐述了将渐变折射率薄膜细分为多层均匀薄膜的分层介质理论，接着给出了一种获得最佳分层数目的分层评价方法，最后以线性变化渐变折射率薄膜为例说明了如何优化获得渐变折射率薄膜的分层数目．研究发现：渐变折射率薄膜的分层数目与薄膜的厚度和薄膜的折射率变化快慢有关，在一定的折射率变化范围内，渐变折射率薄膜的分层数目随着薄膜厚度的增加先减小后增大．

GaSb based midinfrared equilateral-triangle-resonator semiconductor lasers

Theoretical calculations of the mode characteristics of an equilateral-triangle resonator (ETR) with a 10 mu m cavity side length show that the fundamental mode, with longitudinal mode index of 25, has a wavelength of 2.185 mu m and a longitudinal mode separation of 100 nm. This mode has a quality factor (similar to 2x10(5)) that is much larger than the first (similar to 5x10(4)) and second (similar to 3x10(4)) order modes, indicating that single fundamental mode lasing should be accessible over a broad wavelength tuning range. An electrically injected ETR based on this design is fabricated from an InGaAsSb/AlGaAsSb/GaSb, graded-index separate-confinement heterostructure, laser diode wafer with a 2.1 mu m emission wavelength. This device achieved single mode, continuous wave operation at 77 K with a threshold current of 0.5 mA and a single mode wavelength tuning range of 3.25 nm, which is accomplished by varying the injection current from 0.5 to 6.0 mA. (C) 2008 American Vacuum Society.