GAAS/GAALAS GRADED INDEX SEPARATE CONFINEMENT SINGLE QUANTUM-WELL SINGLE-MODE WAVE-GUIDE ELECTROABSORPTION LIGHT-MODULATOR
Data(s) |
1991
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Resumo |
A GaAs/GaAlAs graded-index separate confinement single quantum well heterostructure single-mode ridge waveguide electroabsorption modulator was fabricated and investigated. For the modulator with a quantum well width of 100 angstrom and device length of 700-mu-m, an on/off ratio of 29.7 dB and estimated absorption insertion loss of 3 dB were obtained for TE polarised light with wavelength 8650 angstrom, and for TM polarisation the on/off ratio was 28.5 dB. With a switching voltage of 1 V, an on/off ratio of 15 dB was achieved. Photocurrent spectra exhibited a red shift of 600 angstrom of the absorption edge when the voltage applied to the PIN diode was varied from 0.5 to -7 V. The corresponding shift of the room temperature exciton peak energy was 96 meV. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
ZHU LD; XIONG FK; WANG CM; CHEN ZH; HSIE YL; FEAK GAB; BALLANTYNE JM.GAAS/GAALAS GRADED INDEX SEPARATE CONFINEMENT SINGLE QUANTUM-WELL SINGLE-MODE WAVE-GUIDE ELECTROABSORPTION LIGHT-MODULATOR,IEE PROCEEDINGS-J OPTOELECTRONICS,1991,138(5):313-318 |
Palavras-Chave | #半导体器件 #GAALAS SEMICONDUCTOR-LASERS #OPTICAL MODULATION #ULTIMATE LIMIT #ABSORPTION #HETEROSTRUCTURE #DEPENDENCE #DIODE |
Tipo |
期刊论文 |