合成孔径激光成像雷达(Ⅰ):离焦和相位偏置望远镜接收天线

把合成孔径激光成像雷达的目标衍射区分为三个区域,提出采用离焦或者附加空间相位调制板的光学接收望远镜补偿回波像差。当目标处于菲涅耳衍射区时可采用离焦或偏置望远镜补偿回波二次项离焦像差并产生用于孔径合成的二次项相位历程;目标处于夫琅和费衍射区时可以采用离焦或偏置望远镜补偿回波二次项离焦像差但不产生相位历程;目标处于瑞利-索末菲衍射区域时不可能补偿回波高阶像差。

合成孔径激光成像雷达(Ⅲ):双向环路发射接收望远镜

提出了一种用于合成孔径激光成像雷达的双向环路结构的发射接收望远镜,双向环路包括发射4-f转像系统、接收4-f转像系统和独立的望远镜。发射通道中设置离焦和相位调制平板偏置,接收通道中设置离焦和相位平板偏置。控制发射离焦量,发射相位调制函数,接收离焦量,接收相位调制函数,用同一个望远镜可以同时实现空间二次项相位附加偏置的激光发射和消除目标点散射回波接收波面像差的离焦光学接收,并产生雷达运动方向上合适的和可控制的相位二次项历程,从而实现孔径合成成像。详细介绍了系统设计,给出了从发射到光电外差接收的全过程传输方程。

Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures

Using the measured capacitance-voltage curves and the photocurrent spectrum obtained from the Ni Schottky contact on a strained Al0.3Ga0.7N/GaN heterostructure, the value of the relative permittivity of the AlGaN barrier layer was analysed and calculated by self-consistently solving Schrodinger's and Poisson's equations. It is shown that the calculated values of the relative permittivity are different from those formerly reported, and reverse biasing the Ni Schottky contact has an influence on the value of the relative permittivity. As the reverse bias increases from 0 V to - 3 V, the value of the relative permittivity decreases from 7.184 to 7.093.

Nanodiamond formation by hot-filament chemical vapor deposition on carbon ions bombarded Si

Nanocrystalline diamond films were grown by a two-step process on Si(1 0 0) substrate, which was first pretreated by pure carbon ions bombardment. The bombarded Si substrate was then transformed into a hot-filament chemical vapor deposition (HFCVD) system for further growth. Using the usual CH4/H-3 feed gas ratio for micro crystalline diamond growth, nanodiamond crystallites were obtained. The diamond nucleation density is comparable to that obtained by biasing the substrate. The uniformly distributed lattice damage is proposed to be responsible for the formation of the nanodiamond. (C) 2002 Elsevier Science B.V. All rights reserved.

Design, simulation and testing of large area silicon drift detectors and detector array for X-ray spectroscopy

Large area (25 mm(2)) silicon drift detectors and detector arrays (5x5) have been designed, simulated, and fabricated for X-ray spectroscopy. On the anode side, the hexagonal drift detector was designed with self-biasing spiral cathode rings (p(+)) of fixed resistance between rings and with a grounded guard anode to separate surface current from the anode current. Two designs have been used for the P-side: symmetric self-biasing spiral cathode rings (p(+)) and a uniform backside p(+) implant. Only 3 to 5 electrodes are needed to bias the detector plus an anode for signal collection. With graded electrical potential, a sub-nanoamper anode current, and a very small anode capacitance, an initial FWHM of 1.3 keV, without optimization of all parameters, has been obtained for 5.9 keV Fe-55 X-ray at RT using a uniform backside detector.

The investigations on semi-insulating GaAs by surface photovoltaic spectroscopy

The surface photovoltage (SPV) effect induced by the defect states in semi-insulating (SI) GaAs was studied. The PV response below the band edge was measured at room temperature with a de optical biasing. The spectra were found to be strongly dependent on the surface recombination and were attributed to formation of the carrier concentration gradient near the surface region, showing that SPV is a very sensitive and nondestructive technique for characterizing the surface quality of the SI-GaAs wafers.

PHOTOVOLTAIC EFFECT AND ITS POLARITY IN SI DOPING SUPERLATTICES

We have studied the photovoltaic effects in Si doping superlattices (nipi) under different excitation conditions with and without additional cw optical biasing using a He-Ne laser. On the basis of the photovoltaic theory of carrier spatial separation in superlattices, we propose the concept of spatial fixity of the photovoltage polarity in type-II superlattices and examine the experimental results. The photovoltaic effect in Si nipi is found mainly from the direct transitions related with shallow impurities in real space, not the electron-hole band-to-band process as in GaAs nipi.

WANNIER LOCALIZATION IN GAAS/GAALAS SUPERLATTICES UNDER ELECTRIC-FIELD

We have studied the Wannier-Stark effect in GaAs/GaAlAs short-period superlattices under applied electric field perpendicular to the layers by room- and low-temperature photocurrent measurements. The changes in the transition intensities with biasing are well fitted to a theoretical calculation based on the finite Kronig-Penney model on which the potential of an applied electric field is superposed. With increasing electric field, the 0h peak grows to a maximum while the -1h and +1h peaks monotonousely decrease. By a comparison of the spectra measured at different temperatures, the two peaks in the room temperature photocurrent spectra at relatively low electric field (1.0 X 10(4) V/cm) are identified to be caused by the Wannier localization effect instead of saddle-point excitons.

AIGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band

A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10×120μm transistors. A Wilkinson splitters and combining were used to divide and combine the power. By biasing the amplifier at V_(DS) =40V, I(DS)= 0. 9A, a maximum CW output power of 41. 4dBm with a maximum power added efficiency (PAE) of 32. 54% and a power combine efficiency of 69% was achieved at 5. 4GHz.

Design, simulation and testing of large area silicon drift detectors and detector array for X-ray spectroscopy

Large area (25 mm(2)) silicon drift detectors and detector arrays (5x5) have been designed, simulated, and fabricated for X-ray spectroscopy. On the anode side, the hexagonal drift detector was designed with self-biasing spiral cathode rings (p(+)) of fixed resistance between rings and with a grounded guard anode to separate surface current from the anode current. Two designs have been used for the P-side: symmetric self-biasing spiral cathode rings (p(+)) and a uniform backside p(+) implant. Only 3 to 5 electrodes are needed to bias the detector plus an anode for signal collection. With graded electrical potential, a sub-nanoamper anode current, and a very small anode capacitance, an initial FWHM of 1.3 keV, without optimization of all parameters, has been obtained for 5.9 keV Fe-55 X-ray at RT using a uniform backside detector.

Highly efficient electroluminescence from green-light-emitting electrochemical cells based on Cu-I complexes

The complexes [Cu(dnpb)(DPEphos)](+)(X-) (dnpb and DPEphos are 2,9-di-n-butyl-1,10-phenanthroline and bis[2-(diphenyl-phosphino)phenyl]ether, respectively, and X- is BF4-, ClO4-, or PF6-) can form high quality films with photoluminescence quantum yields of up to 71 +/- 7%. Their electroluminescent properties are studied using the device-structure indium tin oxide (ITO)/complex/metal cathiode. The devices emit green light efficiently, with an emission maximum of 523 nm, and work in the mode of light-emitting electrochemical cells. The response time of the devices greatly depends on the driving voltage, the counterions, and the thickness of the complex film. After pre-biasing at 25 V for 40 s, the devices turn on instantly, with a turn-on voltage of ca. 2.9 V. A current efficiency of 56 cd A(-1) and an external quantum efficiency of 16% are realised with Al as the cathode. Using a low-work-function metal as the cathode can significantly enhance the brightness of the device almost without affecting the turn-on voltage and current efficiency. With a Ca cathode, a brightness of 150 cd m(-2) at 6 V and 4100 cd m(-2) at 25 V is demonstrated. The electroluminescent performance of these types of complexes is among the best so far for transition metal complexes with counterions.