Thickness And Component Distributions Of Yttrium-Titanium Alloy Films In Electron-Beam Physical Vapor Deposition

Thickness and component distributions of large-area thin films are an issue of international concern in the field of material processing. The present work employs experiments and direct simulation Monte Carlo (DSMC) method to investigate three-dimensional low-density, non-equilibrium jets of yttrium and titanium vapor atoms in an electron-beams physical vapor deposition (EBPVD) system furnished with two or three electron-beams, and obtains their deposition thickness and component distributions onto 4-inch and 6-inch mono-crystal silicon wafers. The DSMC results are found in excellent agreement with our measurements, such as evaporation rates of yttrium and titanium measured in-situ by quartz crystal resonators, deposited film thickness distribution measured by Rutherford backscattering spectrometer (RBS) and surface profilometer and deposited film molar ratio distribution measured by RBS and inductively coupled plasma atomic emission spectrometer (ICP-AES). This can be taken as an indication that a combination of DSMC method with elaborate measurements may be satisfactory for predicting and designing accurately the transport process of EBPVD at the atomic level.

Thermal stress wave and spallation induced by an electron beam

Thermal stress wave and spallation in aluminium alloy exposed to a high fluency and low energy electron beams are studied theoretically. A simple model for the study of energy deposition of electrons in materials is presented on the basis of some empirical formulae. Under the stress wave induced by energy deposition, microcracks and/or microvoids may appear in target materials, and in this case, the inelastic volume deformation should not vanish. The viscoplastic model proposed by Bodner and Partom with corresponding Gurson's yield function requires modification for this situation. The new constitutive model contains a scalar field variable description of the material damage which is taken as the void volume fraction of the polycrystalline material. Incorporation of the damage parameter permits description of rate-dependent, compressible, inelastic deformation and ductile fracture. The melting phenomenon has been observed in the experiment, therefore one needs to take into account the melting process in the intermediate energy deposition range. A three-phase equation of state used in the paper provides a more detailed and thermodynamical description of metals, particularly, in the melting region. The computational results based on the suggested model are compared with the experimental test for aluminium alloy, which is subjected to a pulsed electron beam with high fluency and low energy. (C) 1997 Elsevier Science Ltd.

A novel contactless method for characterization of semiconductors: Surface electron beam induced voltage in scanning electron microscopy

We present a novel contactless and nondestructive method called the surface electron beam induced voltage (SEBIV) method for characterizing semiconductor materials and devices. The SEBIV method is based on the detection of the surface potential induced by electron beams of scanning electron microscopy (SEM). The core part of the SEBIV detection set-up is a circular metal detector placed above the sample surface. The capacitance between the circular detector and whole surface of the sample is estimated to be about 0.64 pf It is large enough for the detection of the induced surface potential. The irradiation mode of electron beam (e-beam) influences the signal generation. When the e-beam irradiates on the surface of semiconductors continuously, a differential signal is obtained. The real distribution of surface potentials can be obtained when a pulsed e-beam with a fixed frequency is used for irradiation and a lock-in amplifier is employed for detection. The polarity of induced potential depends on the structure of potential barriers and surface states of samples. The contrast of SEBIV images in SEM changes with irradiation time and e-beam intensity.

Commissioning of electron cooling in CSRm

A new generation electron cooler has started operation in the heavy ion synchrotron CSRm which is used to increase the intensity of heavy ions. Transverse cooling of the ion beam after horizontal multi-turn injection allows beam accumulation at the injection energy. After optimization of the accumulation process an intensity increase in a synchrotron pulse by more than one order of magnitude has been achieved. In given accumulation time interval of 10 seconds, 108particles have been accumulated and accelerated to the final energy. The momentum spread after accumulation and acceleration in the 10−4 range has been demonstrated in six species of ion beams. Primary measurements of accumulation process varying with electron energy,electron beam current, electron beam profile, expansion factor and injection interval have been performed.The lifetimes of ion beams in the presence of electron beams were roughly measured with the help of DCCT signal.

高真空室中的水蒸气对HfO2薄膜性能的影响

本文研究了在镀膜过程中真空室内水蒸气的含量对HfO2薄膜物理性能的影响。用电子束蒸发和光电极值监控的方法在BK7基底上制备HfO2薄膜。利用残余气体分析仪在线监测了真空室内的残余气氛组成。分别用Lambda 900光谱仪、X射线衍射方法、表面热透镜技术和1064nm的激光器测试了薄膜的光学性能、微结构、吸收和激光损伤阈值。实验发现，附加冷阱装置有助于我们有效控制镀膜过程中的水汽含量，且在水蒸气含量较少的真空室内镀制的薄膜具有较高的折射率，较小的晶粒尺寸，较低的弱吸收值和较高的损伤阈值。

薄膜材料对TiO2基薄膜激光损伤阈值的影响

abstract {The optical property, structure, surface properties (roughness and defect density) and laser-induced damage threshold (LIDT) of TiO₂ films deposited by electronic beam (EB) evaporation of TiO₂ (rutile), TiO₂ (anatase) and TiO₂ + Ta₂O₅ composite materials are comparatively studied. All films show the polycrystalline anatase TiO₂ structure. The loose sintering state and phase transformation during evaporating TiO₂ anatase slice lead to the high surface defect density, roughness and extinction coefficient, and low LIDT of films. The TiO₂ + Ta₂O₅ composite films have the lowest extinction coefficient and the highest LIDT among all samples investigated. Guidance of selecting materials for high LIDT laser mirrors is given.}

用于掺钛蓝宝石激光系统的高反膜的激光损伤

用电子束蒸发制备了用于掺钛蓝宝石啁啾脉冲放大激光系统的TiO2/HfO2/SiO2高反膜，其带宽约为176nm（R>98%, λ0=800nm），激光损伤阈值（LIDT）为2.4 J/cm2。通过TiO2和HfO2单层膜的透过光谱计算了这两种材料的折射率和消光系数。高反膜的性能主要由高折射率材料决定：折射率越高，反射带越宽；消光系数越小，薄膜吸收越小，LIDT越高。最后，讨论了高反膜的激光损伤机制。

Ta2O5膜在532, 800 和 1064 nm波长的n-on-1体系下的激光损伤阈值研究

Ta2O5膜采用传统的电子束蒸发方法制备，并在氧气中673 K的条件下进行了退火12 h处理。首先在1-on-1体系下对Ta2O5膜进行了532和1064 nm波长下的激光损伤阈值（LIDT） 研究，然后在n-on-1体系下分别对532，800和1064 nm三种波长下的激光损伤阈值进行了研究。结果表明在n-on-1体系下Ta2O5膜在532和1064 nm波长下的阈值均高于1-on-1体系下的阈值。此外，在n-on-1体系下，薄膜的阈值随波长增加而增大。同时发现，在氧气中进行退火对Ta2O5膜的光学性能

Effects of oxygen partial pressure on packing density and laser damage threshold of TiO2 thin films

TiO2 films are deposited by electron beam evaporation as a function of oxygen partial pressure. The packing density, refractive index, and extinction coefficient all decrease with the increase of pressure, which also induces the change of the film's microstructure, such as the increase of voids and H2O concentration in the film. The laser-induced damage threshold (LIDT) of the film increases monotonically with the rise of pressure in this experiment. The porous structure and low nonstoichiometric defects absorption contribute to the film's high LIDT. The films prepared at the lowest and the highest pressure show nonstoichiometric and surface-defects-induced damage features, respectively.(C) 2007 American Institute of Physics.

Comparison of femtosecond and nanosecond laser-induced damage in HfO2 single-layer film and HfO2-SiO2 high reflector

HfO2 single layers, 800 run high-reflective (HR) coating, and 1064 ran HR coating were prepared by electron-beam evaporation. The laser-induced damage thresholds (LIDTs) and damage morphologies of these samples were investigated with single-pulse femtosecond and nanosecond lasers. It is found that the LIDT of the HfO2 single layer is higher than the HfO2-SiO2 HR coating in the femtosecond regime, while the situation is opposite in the nanosecond regime. Different damage mechanisms are applied to study this phenomenon. Damage morphologies of all samples due to different laser irradiations are displayed. (c) 2007 Optical Society of America.

LBO晶体上具有不同厚度过渡层的倍频增透膜的设计和制备

Design and preparation of frequency doubling antireflection coating with different thicknesses of interlayer were investigated for LiB₃O₅ (LBO) substrate. The design was based on the vector method. The thickness of the inserted SiO₂ interlayer could be changed in a wide range for the four-layer design with two zeros at 1064 and 532 nm. The coatings without any interlayer and with 0.1 quarter-wave (λ/4), 0.3 λ/4, 0.5 λ/4 SiO₂ interlayer were deposited respectively on LBO by using electron beam evaporation technique. All the prepared coatings with SiO₂ interlayer indicated satisfying optical behavior. This expanded our option for the thickness of an interlayer when coating on LBO substrate. The prepared films with SiO₂ interlayer showed better adhesion than that without any interlayer. The thickness of the interlayer affected the adhesion, the adhesion for the coating with 0.5 λ/4 SiO₂ interlayer was not as good as the other two.}

An Efficient Nanocrystalline La2O3:Tm3+ Blue Phosphor for Field-Emission Displays with High Color Purity

Nanocrystalline Tm3+-doped La2O3 phosphors were prepared through a Pechini-type sol-gel process. X-ray diffraction, field-emission scanning electron microscopy, photoluminescence, and cathodoluminescence spectra were utilized to characterize the synthesized phosphors. Under the excitation of UV light (234 nm) and low-voltage electron beams (1-3 kV), the Tm3+-doped La2O3 phosphors show the characteristic emissions of Tm3+(D-1(2), (1)G(4)-F-3(4), H-3(6) transitions).

LaGaO3 : A (A=Sm3+ and/or Tb3+) as promising phosphors for field emission displays

LaGaO3:Sm3+, LaGaO3:Tb3+ and LaGaO3: Sm3+, Tb3+ phosphors were prepared through a Pechini-type sol-gel process. X-Ray diffraction, field emission scanning electron microscopy, photoluminescence (PL), and cathodoluminescence (CL) spectroscopy were utilized to characterize the synthesized phosphors. Under excitation with ultraviolet light (250-254 nm), the LaGaO3: Sm3+, LaGaO3: Tb3+ and LaGaO3: Sm3+, Tb3+ phosphors mainly show the characteristic broadband emission (from 300 to 600 nm with a maximum around 430 nm) of the LaGaO3 host lattice, accompanied by the weak emission of Sm3+ ((4)G(5/2) -> H-6(5/2), H-6(7/2), H-6(9/2) transitions) and/or Tb3+ (D-5(3,4) -> F-7(6,5,4,3) transitions). However, under excitation by low-voltage electron beams (1-3 kV), the LaGaO3: Sm3+, LaGaO3: Tb3+ and LaGaO3: Sm3+, Tb3+ phosphors exhibit exclusively the characteristic emissions of Sm3+ and/or Tb3+ with yellow (Sm3+), blue (Tb3+, with low concentrations) and white (Sm3+ + Tb3+) colors, respectively.

One-dimensional CaWO4 and CaWO4:Tb3+ nanowires and nanotubes: electrospinning preparation and luminescent properties

One-dimensional CaWO4 and CaWO4:Tb3+ nanowires and nanotubes have been prepared by a combination method of sol-gel process and electrospinning. X-Ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), photoluminescence (PL), low voltage cathodoluminescence (CL) and time-resolved emission spectra, as well as kinetic decays were used to characterize the resulting samples. The results of XRD, FT-IR, TG-DTA indicate that the CaWO4 and CaWO4: Tb3+ samples begin to crystallize at 500 degrees C with the scheelite structure. Under ultraviolet excitation and low-voltage electron beams excitation, the CaWO4 samples exhibit a blue emission band with a maximum at 416 nm originating from the WO42- groups, while the CaWO4:Tb3+ samples show the characteristic emission of Tb3+ corresponding to (D4-F6,5,4,3)-D-5-F-7 transitions due to an efficient energy transfer from WO42- to Tb3+.

Synthesis and Luminescent Properties of LaAlO3:RE3+ (RE = Tm, Tb) Nanocrystalline Phosphors via a Sol-Gel Process

LaAlO3:Tm3+ and LaAlO3:Tb3+ phosphors were prepared through a Pechini-type sol-gel process. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), photoluminescence, and cathodoluminescence (CL) spectra were utilized to characterize the synthesized phosphors. The XRD results reveal that the fully crystalline pure LaAlO3 Phase can be obtained at 800 degrees C. The FE-SEM image indicates that the phosphor samples are composed of aggregated spherical particles with sizes ranging from 40 to 80 nm. Under the excitation of ultraviolet light (230 nm) and low-voltage electron beams (1-3 kV), the LaAlO3:Tm3+ and LaAlO3:Tb3+ phosphors show the characteristic emissions of Tb3+ (D-1(2)-> H-3(6,4),F-3(4) transitions) and Tm3+ (D-5(3,4)-> F-7(6,5,4,3) transitions) respectively. The CL of the LaAlO3:Tm3+ phosphors have high color purity and comparable intensity to the Y2SiO5:Ce3+ commercial product, and the CL colors of Tb3+-doped LaAlO3 phosphors can be tuned from blue to green by changing the doping concentration of Tb3+ to some extent.