Growth Mechanism And Joint Structure Of Zno Tetrapods

Regular zinc oxide (ZnO) tetrapods with a flat plane have been obtained on Si(1 0 0) substrate via the chemical vapour deposition approach. The x-ray diffraction result suggests that these tetrapods are all single crystals with a wurtzite structure that grow along the (0 0 0 1) direction and corresponding electron backscatter diffraction analysis reveals the crystal orientation of growth and exposed surface. Furthermore, we find some ZnO tetrapods with some legs off and the angles between every two legs are measured with the aid of scanning electron microscopy and image analysis, which benefit to reveal the structure of ZnO tetrapods joint. The structure model and growth mechanism of ZnO tetrapods are proposed. Besides, the stable model of the interface was obtained through the density-functional theory calculation and the energy needed to break the twin plane junction was calculated as 5.651 J m(-2).

Structural characterization of AlGaN/GaN superlattices by x-ray diffraction and Rutherford backscattering

We report on structural characterization of AlGaN/GaN superlattices grown on sapphire. The superlattice formation is evidenced by high-resolution x-ray diffraction and transmission electron microscopy. The high resolution x-ray diffraction spectra exhibit a pattern of satellite peaks. The in-plane lattice constants of the superlattices indicate the coherent growth of the AlGaN layer onto GaN. The average At composition in the superlattices is determined to be 0.08 by Rutherford backscattering spectroscopy. The average parallel and perpendicular elastic strains for the SLs are determined to be (e(parallel to)) = +0.25% and (e(perpendicular to)) = -0.17%. (c) 2006 Elsevier Ltd. All rights reserved.

QtUCP-A program for determining unit-cell parameters in electron diffraction experiments using double-tilt and rotation-tilt holders

A computer program, QtUCP, has been developed based on several well-established algorithms using GCC 4.0 and Qt (R) 4.0 (Open Source Edition) under Debian GNU/Linux 4.0r0. it can determine the unit-cell parameters from an electron diffraction tilt series obtained from both double-tilt and rotation-tilt holders. In this approach, two or more primitive cells of the reciprocal lattice are determined from experimental data, in the meantime, the measurement errors of the tilt angles are checked and minimized. Subsequently, the derived primitive cells are converted into the reduced form and then transformed into the reduced direct primitive cell. Finally all the patterns are indexed and the least-squares refinement is employed to obtain the optimized results of the lattice parameters. Finally, two examples are given to show the application of the program, one is based on the experiment, the other is from the simulation. (C) 2008 Elsevier B.V. All rights reserved.

Depth dependent elastic strain in ZnO epilayer: combined Rutherford backscattering/channeling and X-ray diffraction

A ZnO layer was grown by metalorganic chemical vapor deposition (MOCVD) on a sapphire (0 0 0 1) substrate. The perpendicular and parallel elastic strain of the ZnO epilayer, e(perpendicular to) = 0.19%, e(parallel to) = -0.29%, respectively, were derived by using the combination of Rutherford backscattering (RBS)/channeling and X-ray diffraction (XRD). The ratio vertical bar e(parallel to)/ e(perpendicular to)vertical bar = 1.5 indicates that ZnO layer is much stiffer in the a-axis direction than in the c-axis direction. By using RBS/C, the depth dependent elastic strain was deduced. The strain is higher at the depth close to the interface and decreases towards the surface. The negative tetragonal distortion was explained by considering the lattice mismatch and thermal mismatch in ZnO thin film. (c) 2004 Elsevier B.V. All rights reserved.

Transfer property of electron pulse in a femto-second electron diffraction system

An ultra-fast electron diffraction system has been designed. The static and dynamic characters of an electron pulse with 150 fs temporal dispersion are studied during its transmission in the whole ultra-fast electron diffraction system, including the size of the electron spot, temporal dispersion, distribution of azimuths and elevation angles. The initial status of the photoelectrons are put down by Monte Carlo method, both the two dimensional and three dimensional electric fields are calculated by finite difference method and the magnetic flux are. calculated by finite element method.

MANY-BEAM SIMULATIONS AND OBSERVATIONS OF LARGE-ANGLE CONVERGENT-BEAM ELECTRON-DIFFRACTION IMAGING OF CRYSTAL DEFECTS

Many-beam dynamical simulations and observations have been made for large-angle convergent-beam electron diffraction (LACBED) imaging of crystal defects, such as stacking faults and dislocations. The simulations are based on a general matrix formulation of dynamical electron diffraction theory by Peng and Whelan, and the results are compared with experimental LACBED images of stacking faults and dislocations of Si angle crystals. Excellent agreement is achieved.

CONVERGENT-BEAM ELECTRON-DIFFRACTION STUDY OF GE0.5SI0.5/SI STRAINED-LAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY

Side bands due to purely composition and combined composition-strain modulation in plan-view specimens of a nominally Ge0.5Si0.5(5nm)/Si(25nm) superlattice have been obtained by large-angle convergent-beam electron diffraction. The intensities of the side bands have been calculated from a periodic tension-compression model of the superlattice bilayer using the kinematical theory of electron diffraction. Accurate values of elastic strains in the bilayer and of the Ge content can be obtained in this way.

Electron diffraction and photoemission studies of clean and water-covered Si(5,5,12) and Si(112) surfaces

The structure of silicon surfaces in the orientation range (113)-(5,5,12)-(337)-(112) has been investigated using high resolution LEED and photoemission both on a spherical and on flat samples. We find that Si(5,5,12) [5.3 degrees from (113) and 0.7 degrees from (937)] is the only stable orientation between (113) and (111) and confirm the result of Baski et al. [Science 269, 1556 (1995)] that it has a 2 x 1 superstructure with a very large unit cell of 7.68 x 53.5 Angstrom(2). Adsorption measurements of water on Si(5,5,12) yield a mobile precursor kinetics with two kinds of regions saturating at 0.25 and 0.15 ML which are related to adsorption on different sites. Using these results, a modified structure model is proposed. Surfaces between (113) and (5,5,12) separate into facets of these two orientations; between (5,5,12) and (112), they separate into (5,5,12) and (111) facets. (337) facets in this range may be considered as defective (5,5,12) facets.

ELECTRON-DIFFRACTION STUDY ON MONOLAYER LB FILMS OF LIQUID-CRYSTALLINE POLYACRYLATE CONTAINING PARA-NITRO AZOBENZENE

Monolayers of liquid-crystalline polyacrylate containing para-nitro azobenzene (HP6) on the water subphase were characterized by the surface pressure (pi)-area per monomer unit (A) isotherm and were successfully transferred onto glass substrates by the vertical lifting method. The monolayer Langmuis-Blodgett (LB) films transferred at different surface pressures were studied by electron diffraction. The thickness of the monolayer LB film was measured by the transmission electron microscopy folding method. The results of the electron diffraction of the monolayer LB films of HP6 showed that a two-dimensional arrangement exists in the transferred films. According to the results of the pi-A isotherm, electron diffraction and the measured thickness of the monolayer LB film, a molecular arrangement model of HP6 on the water subphase was proposed. The ordered monolayer formation of HP6 showed it to be promising as a second-order non-linear optical material.

Thickness And Component Distributions Of Yttrium-Titanium Alloy Films In Electron-Beam Physical Vapor Deposition

Thickness and component distributions of large-area thin films are an issue of international concern in the field of material processing. The present work employs experiments and direct simulation Monte Carlo (DSMC) method to investigate three-dimensional low-density, non-equilibrium jets of yttrium and titanium vapor atoms in an electron-beams physical vapor deposition (EBPVD) system furnished with two or three electron-beams, and obtains their deposition thickness and component distributions onto 4-inch and 6-inch mono-crystal silicon wafers. The DSMC results are found in excellent agreement with our measurements, such as evaporation rates of yttrium and titanium measured in-situ by quartz crystal resonators, deposited film thickness distribution measured by Rutherford backscattering spectrometer (RBS) and surface profilometer and deposited film molar ratio distribution measured by RBS and inductively coupled plasma atomic emission spectrometer (ICP-AES). This can be taken as an indication that a combination of DSMC method with elaborate measurements may be satisfactory for predicting and designing accurately the transport process of EBPVD at the atomic level.

Study of the surface structure of butterfly wings using the scanning electron microscopic moire method

Scanning electron microscopic (SEM) moire method was used to study the surface structure of three kinds of butterfly wings: Papilio maackii Menetries, Euploea midamus (Linnaeus), and Stichophthalma how-qua (Westwood). Gratings composed of curves with different orientations were found on scales. The planar characteristics of gratings and some other planar features of the surface structure of these wings were revealed, respectively, in terms of virtual strain. Experimental results demonstrate that SEM moire method is a simple, nonlocal, economical, effective technique for determining which grating exists on one whole scale, measuring the dimension and the whole planar structural character of the grating on each scale, as well as characterizing the relationship between gratings on different scales of each butterfly wing. Thus, the SEM moire method is a useful tool to assist with characterizing the structure of butterfly wings and explaining their excellent properties. (c) 2007 Optical Society of America.

Radiation damping effects on the ultrashort x-ray pulses generated by nonlinear Thomson backscattering

Nonlinear Thomson backscattering of an intense Gaussian laser pulse by a counterpropagating energetic electron is investigated by numerically solving the electron equation of motion taking into account the radiative damping force. The backscattered radiation characteristics are different for linearly and circularly polarized lasers because of a difference in their ponderomotive forces acting on the electron. The radiative electron energy loss weakens the backscattered power, breaks the symmetry of the backscattered-pulse profile, and prolongs the duration of the backscattered radiation. With the circularly polarized laser, an adjustable double-peaked backscattered pulse can be obtained. Such a profile has potential applications as a subfemtosecond x-ray pump and probe with adjustable time delay and power ratio. (c) 2006 American Institute of Physics.

Acceleration of ultra-thin electron layer.Analytical treatment compared with 1D-PIC simulation

In this paper, we apply an analytical model [V.V. Kulagin et al., Phys. Plasmas 14, 113101 (2007)] to describe the acceleration of an ultra-thin electron layer by a schematic single-cycle laser pulse and compare with one-dimensional particle-in-cell (1D-PIC) simulations. This is in the context of creating a relativistic mirror for coherent backscattering and supplements two related papers in this EPJD volume. The model is shown to reproduce the 1D-PIC results almost quantitatively for the short time of a few laser periods sufficient for the backscattering of ultra-short probe pulses.

Study of oscillatory behavior of recording process arising from electron-hole competition in strongly oxidized LiNbO3 : Ce : Cu

We have investigated ultraviolet (UV) photorefractive effect of lithium niobate doubly doped with Ce and Cu. It is found the diffraction efficiency shows oscillating behavior Under UV-1ight-recording. A model in which electrons and holes can be excited from impurity centers in the UV region is proposed to study the oscillatory behavior of the diffraction efficiency. Oil the basis of the material equations and the coupled-wave equations, we found that the oscillatory behavior is due to the oscillation of the relative spatial phase shift Phi. And the electron-hole competition may cause the oscillation of the relative spatial phase shift. A switch point from electron grating to hole grating is chosen to realize nonvolatile readout by a red light with high sensitivity (0.4 cm/J). (c) 2005 Elsevier GmbH. All rights reserved.

Femtosecond laser pulse irradiation of Sb-rich AgInSbTe films: Scanning electron microscopy and atomic force microscopy investigations

The single-layer and multilayer Sb-rich AgInSbTe films were irradiated by a single femtosecond laser pulse with the duration of 120 fs. The morphological feature resulting from the laser irradiation have been investigated by scanning electron microscopy and atom force microscopy. For the single-layer film, the center of the irradiated spot is a dark depression and the border is a bright protrusion; however, for the multilayer film, the center morphology changes from a depression to a protrusion as the energy increases. The crystallization threshold fluence of the single-layer and the multilayer films is 46.36 mJ/cm(2), 63.74 mJ/cm(2), respectively.