Structural characterization of AlGaN/GaN superlattices by x-ray diffraction and Rutherford backscattering


Autoria(s): Zhou SQ (Zhou Shengqiang); Wu MF (Wu M. F.); Yao SD (Yao S. D.); Zhang BS (Zhang B. S.); Yang H (Yang H.)
Data(s)

2006

Resumo

We report on structural characterization of AlGaN/GaN superlattices grown on sapphire. The superlattice formation is evidenced by high-resolution x-ray diffraction and transmission electron microscopy. The high resolution x-ray diffraction spectra exhibit a pattern of satellite peaks. The in-plane lattice constants of the superlattices indicate the coherent growth of the AlGaN layer onto GaN. The average At composition in the superlattices is determined to be 0.08 by Rutherford backscattering spectroscopy. The average parallel and perpendicular elastic strains for the SLs are determined to be (e(parallel to)) = +0.25% and (e(perpendicular to)) = -0.17%. (c) 2006 Elsevier Ltd. All rights reserved.

Identificador

http://ir.semi.ac.cn/handle/172111/10388

http://www.irgrid.ac.cn/handle/1471x/64388

Idioma(s)

英语

Fonte

Zhou SQ (Zhou Shengqiang); Wu MF (Wu M. F.); Yao SD (Yao S. D.); Zhang BS (Zhang B. S.); Yang H (Yang H.) .Structural characterization of AlGaN/GaN superlattices by x-ray diffraction and Rutherford backscattering ,SUPERLATTICES AND MICROSTRUCTURES,2006,40(3):137-143

Palavras-Chave #光电子学 #nitride semiconductors #superlattice #Rutherford backscattering/channeling #transmission electron microscopy #x-ray diffraction #MULTIPLE-QUANTUM WELLS #OPTICAL-PROPERTIES #INGAN/GAN #STRAIN #INTERFACE #GROWTH #GAN
Tipo

期刊论文