Effects of electric field on the electronic structure and optical properties of quantum rods with wurtzite structure

The Hamiltonian of wurtzite quantum rods with an ellipsoidal boundary under electric field is given after a coordinate transformation. The electronic structure and optical properties are studied in the framework of the effective-mass envelope-function theory. The quantum-confined Stark effect is illustrated by studying the change of the electronic structures under electric field. The transition probabilities between the electron and hole states decrease sharply with the increase of the electric field. The polarization factor increases with the increase of the electric field. Effects of the electric field and the shape of the rods on the exciton effect are also investigated. The exciton binding energy decreases with the increase of both the electric field and the aspect ratio. In the end, considering the exciton binding energy, we calculated the band gap variation of size- and shape-controlled colloidal CdSe quantum rods, which is in good agreement with experimental results.

The effects of electric field on the electronic structure of a semiconductor quantum dot

The effect of electric field on the electronic structure of a spherical quantum dot is studied in the framework of the effective-mass envelope-function theory. The dependence of the energy of electron states and hole states on the applied electric field and on the quantum dot size is investigated; the mixing of heavy holes and light holes is taken into account. The selection rule for the optical transition between the conduction band and valence band states is obtained. The exciton binding energies are calculated as functions of the quantum dot radius and the strength of the electric field. (C) 1998 American Institute of Physics.

Electric field enhancement in guided-mode resonance filters

Electric fields inside guided-mode resonance filters (GMRFs) may be intensified by resonance effects. The electric field enhancement is investigated in two GMRFs: one is resonant at normal incidence, the other at oblique incidence. It is shown that the two GMRFs exhibit different behaviors in their electric enhancement. Differences between the electric field distributions of the two GMRFs arise because coupling between counter-propagating modes occurs in the first case. It is also shown that the order of the electric field of maximum amplitude can be controlled by modulation of the dielectric constant of the grating. (c) 2006 Optical Society of America.

Electric field distribution in resonant reflection filters under normal incidence

Electric field distributions inside resonant reflection filters constructed using planar periodic waveguides are investigated in this paper. The electric fields may be intensified by resonance effects. Although the resonant reflection peaks can be quite narrow using weakly modulated planar periodic waveguides, the strong electric field enhancement limits their use in high-power laser systems. Strongly modulated waveguides may be used to reduce the electric field enhancement and a cover layer may be used to narrow the bandwidth at the same time. Desired results (i.e. almost no electric field enhancement together with narrow bandwidth) can be realized using this simple structure.

The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots

The refractive nonlinearities of InAs/GaAs quantum dots under a dc electric field at photon energies above its band gap energy have been studied using the reflection Z-scan technique. The effect of the dc electric field on the nonlinear response of InAs/GaAs quantum dots showed similar linear and quadratic electro-optic effects as in the linear response regime at low fields. This implies that the electro-optic effect in the nonlinear regime is analogous to the response in the linear regime for semiconductor quantum dots. Our experimental results show the potential for voltage tunability in InAs quantum dot-based nonlinear electro-optic devices.

Electric field tunable electron g factor and high asymmetrical Stark effect in InAs1-xNx quantum dots

The electronic structure, electron g factor, and Stark effect of InAs1-xNx quantum dots are studied by using the ten-band k center dot p model. It is found that the g factor can be tuned to be zero by the shape and size of quantum dots, nitrogen (N) doping, and the electric field. The N doping has two effects on the g factor: the direct effect increases the g factor and the indirect effect decreases it. The Stark effect in quantum ellipsoids is high asymmetrical and the asymmetry factor may be 319. (c) 2007 American Institute of Physics.

Rashba spin-orbit coupling in InSb nanowires under transverse electric field

We investigate the Rashba spin-orbit coupling brought by transverse electric field in InSb nanowires. In small k(z) (k(z) is the wave vector along the wire direction) range, the Rashba spin-orbit splitting energy has a linear relationship with k(z), so we can define a Rashba coefficient similarly to the quantum well case. We deduce some empirical formulas of the spin-orbit splitting energy and Rashba coefficient, and compare them with the effective-mass calculating results. It is interesting to find that the Rashba spin-orbit splitting energy decreases as k(z) increases when k(z) is large due to the k(z)-quadratic term in the band energy. The Rashba coefficient increases with increasing electric field, and shows a saturating trend when the electric field is large. As the radius increases, the Rashba coefficient increases at first, then decreases. The effects of magnetic fields along different directions are discussed. The case where the magnetic field is along the wire direction or the electric field direction are similar. The spin state in an energy band changes smoothly as k(z) changes. The case where the magnetic field is perpendicular to the wire direction and the electric field direction is quite different from the above two cases, the k(z)-positive and negative parts of the energy bands are not symmetrical, and the energy bands with different spins cross at a k(z)-nonzero point, where the spin splitting energy and the effective g factor are zero.

Influence of longitudinal electric field on the hot-phonon effect in quantum wells

Using the Huang-Zhu model [K. Huang and B.-F. Zhu, Phys. Rev. B 38, 13377 (1988)] for the optical phonons and associated carrier-phonon interactions in semiconductor superlattices, the effects of longitudinal electric field on the energy-loss rates (ELRs) of hot carriers as well as on the hot-phonon effect (HPE) in GaAs/AlAs quantum wells (QWs) are studied systematically. Contributions of various bulklike and interface phonons to the hot-carrier relaxation are compared in detail, and comprehensively analyzed in relation to the intrasubband and intersubband scatterings for quantum cascade lasers. Due to the broken parity of the electron (hole) states in the electric field, the bulklike modes with antisymmetric potentials are allowed in the intrasubband relaxation processes, as well as the modes with symmetric potentials. As the interface phonon scattering is strong only in narrow wells, in which the electric field affects the electron (hole) states little, the ELRs of hot carriers through the interface phonon scattering are not sensitive to the electric field. The HPE on the hot-carrier relaxation process in the medium and wide wells is reduced by the electric field. The influence of the electric field on the hot-phonon effect in quantum cascade lasers is negligible. When the HPE is ignored, the ELRs of hot electrons in wide QWs are decreased noticeably by the electric field, but slightly increased by the field when considering the HPE. In contrast with the electrons, the ELRs of hot holes in wide wells are increased by the field, irrespective of the HPE. (c) 2006 American Institute of Physics.

ELECTRIC-FIELD-INDUCED EXCITON-LINEWIDTH BROADENING IN SHORT-PERIOD GAAS/GAXAL1-XAS SUPERLATTICES

We have investigated the Wannier-Stark effect in GaAs/GaAl1-xAs superlattices under electric fields by photocurrent spectroscopy measurements in the range of temperatures 10-300 K. The linewidth of the Oh Stark-ladder exciton was found to increase significantly along with an increase in peak intensity when the electric field increases. We present a mechanism based on an enhanced interface roughness scattering of electronic states due to Wannier-Stark localization in order to explain this increased broadening with electric field. This electric-field-related scattering mechanism will weaken the negative differential conductance effects in superlattices predicted by Esaki and Tsu.

Effect of a step quantum well structure and an electric-field on the Rashba spin splitting

Spin splitting of conduction subbands in Al_(0.3)Ga_(0.7)As/GaAs/Al_xGa_(1-x)As/Al_(0.3)Ga_(0.7)As step quantum wells induced by interface and electric field related Rashba effects is investigated theoretically by the method of finite difference. The dependence of the spin splitting on the electric field and the well structure, which is controlled by the well width and the step width, is investigated in detail. Without an external electric field, the spin splitting is induced by an in terface related Rashba term due to the built-in structure inversion asymmetry. Applying the external electric field to the step QW, the Rashba effect can be enhanced or weakened, depending on the well structure as well as the direction and the magnitude of the electric field. The spin splitting is mainly controlled by the interface related Rashba term under a negative and a stronger positive electric field, and the contribution of the electric field related Rashba term dominates in a small range of a weaker positive electric field.A method to determine the interface parameter is proposed.The results show that the step QWs might be used as spin switches.

Investigation on internal electric field distribution of organic light-emitting diodes (OLEDs) with Eu2O3 buffer layer

We have found that organic light-emitting diode (OLED) performance was highly improved by using europium oxide (Eu2O3) as a buffer layer on indium tin oxide (ITO) in OLEDs based on tris-(8-hydroxyquinoline) aluminium (Alq(3)), which showed low turn-on voltage, high luminance, and high electroluminescent (EL) efficiency. The thickness of Eu2O3 generally was 0.5-1.5 nm. We investigated the effects of Eu2O3 on internal electric field distributions in the device through the analysis of current-voltage characteristics, and found that the introduction of the buffer layer balanced the internal electric field distributions in hole transport layer (HTL) and electron transport layer (ETL), which should fully explain the role of the buffer layer in improving device performance. Our investigation demonstrates that the hole injection is Fowler-Nordheim (FN) tunnelling and the electron injection is Richardson-Schottky (RS) thermionic emission, which are very significant in understanding the operational mechanism and improving the performance, of OLEDs.

The effect of electric field maximum on the Rabi flopping and generated higher frequency spectra

We investigate the effect of the electric field maximum on the Rabi flopping and the generated higher frequency spectra properties by solving Maxwell-Bloch equations without invoking any standard approximations. It is found that the maximum of the electric field will lead to carrier-wave Rabi flopping (CWRF) through reversion dynamics which will be more evident when the applied field enters the sub-one-cycle regime. Therefore, under the interaction of sub-one-cycle pulses, the Rabi flopping follows the transient electric field tightly through the oscillation and reversion dynamics, which is in contrast to the conventional envelope Rabi flopping. Complete or incomplete population inversion can be realized through the control of the carrier-envelope phase (CEP). Furthermore, the generated higher frequency spectra will be changed from distinct to continuous or irregular with the variation of the CEP. Our results demonstrate that due to the evident maximum behavior of the electric field, pulses with different CEP give rise to different CWRFs, and then different degree of interferences lead to different higher frequency spectral features.

Phase control of higher spectral components in the presence of a static electric field

We investigate the higher spectral component generations driven by a few-cycle laser pulse in a dense medium when a static electric field is present. Our results show that, when assisted by a static electric field, the dependence of the transmitted laser spectrum on the carrier-envelope phase (CEP) is significantly increased. Continuum and distinct peaks can be achieved by controlling the CEP of the few-cycle ultrashort laser pulse. Such a strong variation is due to the fact that the presence of the static electric field modifies the waveform of the combined electric field, which further affects the spectral distribution of the generated higher spectral components.