ELECTRIC-FIELD-INDUCED EXCITON-LINEWIDTH BROADENING IN SHORT-PERIOD GAAS/GAXAL1-XAS SUPERLATTICES
Data(s) |
1993
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Resumo |
We have investigated the Wannier-Stark effect in GaAs/GaAl1-xAs superlattices under electric fields by photocurrent spectroscopy measurements in the range of temperatures 10-300 K. The linewidth of the Oh Stark-ladder exciton was found to increase significantly along with an increase in peak intensity when the electric field increases. We present a mechanism based on an enhanced interface roughness scattering of electronic states due to Wannier-Stark localization in order to explain this increased broadening with electric field. This electric-field-related scattering mechanism will weaken the negative differential conductance effects in superlattices predicted by Esaki and Tsu. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
ZHANG YH; JIANG DS; LI F; WU RH; ZHOU JM; MEI XB.ELECTRIC-FIELD-INDUCED EXCITON-LINEWIDTH BROADENING IN SHORT-PERIOD GAAS/GAXAL1-XAS SUPERLATTICES,PHYSICAL REVIEW B,1993,48(16):12296-12299 |
Palavras-Chave | #半导体物理 #GAAS-GAALAS SUPERLATTICES #QUANTUM-WELL STRUCTURES #SEMICONDUCTOR SUPERLATTICES #INDUCED LOCALIZATION #BLUE SHIFT #BISTABILITY #ABSORPTION |
Tipo |
期刊论文 |