Energy-level shifts of a stationary hydrogen atom in a static external gravitational field with Schwarzschild geometry

he first order perturbations of the energy levels of a stationary hydrogen atom in a static external gravitational field, with Schwarzschild metric, are investigated. The energy shifts are calculated for the relativistic 1S, 2S, 2P, 3S, 3P, 3D, 4S, 4P, 4D, and 4F levels. The results show that the energy-level shifts of the states with total angular momentum quantum number 1/2 are all zero, and the ratio of absolute energy shifts with total angular momentum quantum number 5/2 is 145. This feature can be used to help us to distinguish the gravitational effect from other effects.

Gravitational corrections to energy-levels of a hydrogen atom

The first-order perturbations of the energy levels of a hydrogen atom in central internal gravitational field are investigated. The internal gravitational field is produced by the mass of the atomic nucleus. The energy shifts are calculated for the relativistic 1S, 2S, 2P, 3S, 3P, 3D, 4S, and 4P levels with Schwarzschild metric. The calculated results show that the gravitational corrections are sensitive to the total angular momentum quantum number.

Synthesis of lanthanide-alkylaluminium bimetallic complexes and studies on their catalytic activities for polymerization of some polar monomers

Three new lanthanide (Ln)-alkylaluminium (Al) bimetallic complexes with the formula [(mu-CF3CO2)(2)Ln(mu-CF3CHO2)AIR(2) . 2THF](2) (Ln = Nd, Y, R=i-C4H9 (i-Bu); Ln=Eu, R=C2H5(Et); THF=tetrahydrofuran) were synthesized by the reaction of Ln(CF,CO,), (Ln=Nd, Y) with HAI (i-Bu)(2) and of Eu(CF3CO2)(3) with AlEt(3), respectively. Their crystal structures were determined by X-ray diffraction at 233 K. [(mu-CF3CO2)(2)Nd (mu-CF3CHO2)Al(i-Bu)(2) . 2THF](2) (Nd-Al) and [(mu-CF3CO2)(2)Y(mu-CF3CHO2)Al(i-Bu)(2) . 2THF](2) (Y-Al) are isomorphous and crystallize in space group with a=12.441(3) Angstrom [12.347(5) Angstrom for Y-Al], b=12.832(3) Angstrom [12.832(4) Angstrom], c=11.334(3) Angstrom [11.292(8) Angstrom], alpha=104.93 (2)degrees [104.45(4)degrees], beta=98.47(2)degrees [98.81(4)degrees], gamma=64.60(2)degrees [64.30(3)degrees], R=0.519 [0.113], R(w)=0.0532 [0.110], Z=1 and [(mu-CF3CO2)(2)Eu(CF3CHO2)AlEt(2) . 2THF](2)(Eu-Al) in space group P2(1)/n with a=11.913(6) Angstrom, b=14.051(9) Angstrom, c=17.920(9) Angstrom, alpha=101.88(11)degrees, beta=gamma=90 degrees, R=0.0509, R(w)=0.0471 and Z=2. The six CF3CO2- (including CF3CHO2-) of each complex, among which pairs are equivalent, coordinated to Ln and Al in three patterns: (A) the two oxygen atoms in one of the three CF3CO2- type coordinated to two different Ln; (B) the two oxygen atoms in the second of CF3CO2- type coordinated to Ln and Al, respectively; (C) one of the two oxygen atoms in the third CF3CO2- type bidentately coordinated to two Ln and another oxygen coordinated to Al and one of the two Ln, respectively. Unlike types A and B, in type C the carboxyl carbon with a hydrogen atom bonded to it was found to appear as an sp(3)-hybridized configuration rather than an sp(2)-one. 1D and 2D NMR results further confirmed the existence of such a disproportionated CF3CHO2- ligand. Methyl methacrylate (MMA) and epichlorohydrin (ECH) could be polymerized by Y-Al or Eu-Al as a single-component catalyst and highly syndiotactic poly(MMA) was obtained. THF could also be polymerized by Y-Al in the presence of a small amount of ECH.

Photoelectron angular distributions from above threshold ionization of hydrogen atoms in strong laser fields

We apply a scattering theory of nonperturbative quantum electrodynamics to study the photoelectron angular distributions (PADs) of a hydrogen atom irradiated by linearly polarized laser light. The calculated PADs show main lobes and jetlike structure. Previous experimental studies reveal that in a set of above-threshold-ionization peaks when the absorbed-photon number increases by one, the jet number also increases by one. Our study confirms this experimental observation. Our calculations further predict that in some cases three more jets may appear with just one-more-photon absorption. With consideration of laser-frequency change, one less jet may also appear with one-more-photon absorption. The jetlike structure of PADs is due to the maxima of generalized phased Bessel functions, not an indication of the quantum number of photoelectron angular momentum states.

Description of two new myxosporean species parasitic in freshwater fishes from the Yangtze River in China

Two new species of myxosporeans (Myxosporea: Myxidiidae), Myxidium tuanfengensis sp. n. and Zschokkella saurogobionis sp. n., Parasitic in freshwater fishes collected from the Yangtze River of China are described in this paper. M. tuanfengensis was found in the liver parenchyma and intestine lumen of Leptobotia taeniops Sauvage, 1878, while Z. saurogobionis was found in the gall bladder of Saurogobio dumerili Bleeker, 1871. The diagnostic characters of M. tuanfengensis are: round or elliptical polysporous plasmodia averaging 118 mum in size; spore oval in frontal view with smooth surface and nearly spindle-shape in sutural view with slightly sinuous sutural ridge, averaging 19.5 x 9.75 x 8.9 mum in size; two large spherical polar capsules 6.8 mum in diameter, with polar filament wound in 4 to 5 coils. The diagnostic characters of Z. saurogobionis are: spore elliptical in both frontal and sutural view measuring 18.3 x 9.8 x 10.8 mum in size; fine sutural ridge in S-form, spore shell marked with 10 to 12 distinct lines paralleled with the sutural line; two spherical polar capsules, 6.7 mum in diameter, with polar filament in 5 coils.

Hydrogen behavior in GaN epilayers grown by NH3-MBE

Hydrogen behavior in unintentionally doped GaN epilayers on sapphire substrates grown by NH3-MBE is investigated. Firstly, we find by using nuclear reaction analysis (NRA) that with increasing hydrogen concentration the background electron concentration increases, which suggests that there exists a hydrogen-related donor in undoped GaN, Secondly, Fourier transform infrared (FTIR) absorption and X-ray photoelectron spectroscopy (XPS) reveal Further that hydrogen atom is bound to nitrogen atom in GaN with a local vibrational mode at about 3211 cm(-1) Hence, it is presumed that the hydrogen-related complex Ga. . .H-N is a hydrogen-related donor candidate partly responsible for high n-type background commonly observed in GaN films. Finally, Raman spectroscopy results of the epilayers show that ill addition to the expected compressive biaxial strain, in some cases GaN films suffer from serious tensile biaxial strain. This anomalous behavior has been well interpreted in terms of interstitial hydrogen lattice dilation. (C) 2001 Elsevier Science B.V. All rights reserved.

Hydrogen related defects in InP

Local vibrational modes(LVMs) in tenths of InP samples reveal clearly existence of complexes related to hydrogen. Complexes of vacancy at indium site with one to four hydrogen atom(s) and isolated hydrogen or hydrogen dimers and complexes of hydrogen with various impurities and intrinsic defects are investigated by FTIR. Especially hydrogen related complexes between various transition metals and hydrogen or hydrogen related complexes between hydrogen with point defects. New LVMs related to hydrogen will be reported in this paper. Dynamical formation mechanism of defects in the annealed nominally undoped semiinsulating InP obtained by high pressure, high temperature annealing of ultra purity materials is proposed. Hydrogen can acts as actuator for antistructure defects production. Structural, electronic and vibrational properties of LVMs related to hydrogen as well as their temperature effects are discussed.

Hydrogen behavior in GaN epilayers grown by NH3-MBE

Hydrogen behavior in unintentionally doped GaN epilayers on sapphire substrates grown by NH3-MBE is investigated. Firstly, we find by using nuclear reaction analysis (NRA) that with increasing hydrogen concentration the background electron concentration increases, which suggests that there exists a hydrogen-related donor in undoped GaN, Secondly, Fourier transform infrared (FTIR) absorption and X-ray photoelectron spectroscopy (XPS) reveal Further that hydrogen atom is bound to nitrogen atom in GaN with a local vibrational mode at about 3211 cm(-1) Hence, it is presumed that the hydrogen-related complex Ga. . .H-N is a hydrogen-related donor candidate partly responsible for high n-type background commonly observed in GaN films. Finally, Raman spectroscopy results of the epilayers show that ill addition to the expected compressive biaxial strain, in some cases GaN films suffer from serious tensile biaxial strain. This anomalous behavior has been well interpreted in terms of interstitial hydrogen lattice dilation. (C) 2001 Elsevier Science B.V. All rights reserved.

Quantum Mechanical Study on Tunnelling and Ballistic Transport of Nanometer Si MOSFETs

Using self-consistent calculations of million-atom Schrodinger-Poisson equations, we investigate the I-V characteristics of tunnelling and ballistic transport of nanometer metal oxide semiconductor field effect transistors (MOSFET) based on a full 3-D quantum mechanical simulation under nonequilibtium condition. Atomistic empirical pseudopotentials are used to describe the device Hamiltonian and the underlying bulk band structure. We find that the ballistic transport dominates the I-V characteristics, whereas the effects of tunnelling cannot be neglected with the maximal value up to 0.8mA/mu m when the channel length of MOSFET scales down to 25 nm. The effects of tunnelling transport lower the threshold voltage V-t. The ballistic current based on fully 3-D quantum mechanical simulation is relatively large and has small on-off ratio compared with results derived from the calculation methods of Luo et al.

Multiple valley couplings in nanometer Si metal-oxide-semiconductor field-effect transistors

We investigate the couplings between different energy band valleys in a metal-oxide-semiconductor field-effect transistor (MOSFET) device using self-consistent calculations of million-atom Schrodinger-Poisson equations. Atomistic empirical pseudopotentials are used to describe the device Hamiltonian and the underlying bulk band structure. The MOSFET device is under nonequilibrium condition with a source-drain bias up to 2 V and a gate potential close to the threshold potential. We find that all the intervalley couplings are small, with the coupling constants less than 3 meV. As a result, the system eigenstates derived from different bulk valleys can be calculated separately. This will significantly reduce the simulation time because the diagonalization of the Hamiltonian matrix scales as the third power of the total number of basis functions. (C) 2008 American Institute of Physics.

A fully three-dimensional atomistic quantum mechanical study on random dopant-induced effects in 25-nm MOSFETs

A fully 3-D atomistic quantum mechanical simulation is presented to study the random dopant-induced effects in nanometer metal-oxide-semiconductor field-effect transistors. The empirical pseudopotential is used to represent the single particle Hamiltonian, and the linear combination of bulk band method is used to solve the million atom Schrodinger equation. The gate threshold fluctuation and lowering due to the discrete dopant configurations are studied. It is found that quantum mechanical effects increase the threshold fluctuation while decreasing the threshold lowering. The increase of threshold fluctuation is in agreement with the researchers' early study based on an approximated density gradient approach. However, the decrease in threshold lowering is in contrast with the density gradient calculations.

Effect of thermal annealing on hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy

Deep trap levels in a Mg-doped GaN grown by metalorganic vapor phase epitaxy are studied with deep level transient spectroscopy (DLTS). The Mg concentration of the sample was 4.8 x 10(19) cm(-3), but the hole concentration was as low as 1.3x10(17) cm-3 at room temperature. The DLTS spectrum has a dominant peak D-1 with an activation energy of 0.41+/-0.05 eV, accompanied by two additional peaks with activation energies of 0.49+/-0.09 eV (D-2) and 0.59+/-0.05 eV (D-3). It was found that the dominant peak D-1 consists of five peaks, each of which has different activation energy and capture cross section. In order to investigate these deep levels further, we performed heat treatment on the same samples to observe the variations of activation energy, capture cross section, and amplitude of DLTS signals. It was found that the longer the heat treatment duration is, the lower the amplitude of DLTS peaks become. This suggests that the decrease of the DLTS signal originates from hydrogen atom outgoing from the film during the annealing process. The possible originality of multiple trap levels was discussed in terms of the Mg-N-H complex. (C) 2000 American Vacuum Society. [S0734-2101(00)01701-2].

Restudy on the wave functions of Gamma(nS) states in the light-front quark model and the radiative decays of Gamma(nS) -> eta(b) + gamma

The light-front quark model has been applied to calculate the transition matrix elements of heavy hadron decays. However, it is noted that using the traditional wave functions of the light-front quark model given in the literature, the theoretically determined decay constants of the Gamma(nS) obviously contradict the data. This implies that the wave functions must be modified. Keeping the orthogonality among the nS states and fitting their decay constants, we obtain a series of the wave functions for Gamma(nS). Based on these wave functions and by analogy with the hydrogen atom, we suggest a modified analytical form for the Gamma(nS) wave functions. Using the modified wave functions, the obtained decay constants are close to the experimental data. Then we calculate the rates of radiative decays of Gamma(nS) -> eta(b) + gamma. Our predictions are consistent with the experimental data on decays Gamma(3S) -> eta(b) + gamma within the theoretical and experimental errors.

Theoretical studies on the reaction mechanism of oxidation of primary alcohols by Zn/Cu(II)-phenoxyl radical catalyst

The catalytic mechanism for the oxidation of primary alcohols catalyzed by the two functional models of galactose oxidase (GOase), M-II L (M = Cu, Zn; L = N,N'-bis(3,5-di-tert-butyl-2-hydroxyphenyl)1-2-diiminoquinone)), has been studied by use of the density functional method B3LYP The catalytic cycle of Cu- and Zn-catalysts consists of two parts, namely, substrate oxidation (primary alcohol oxidation) and O-2 reduction (catalyst regeneration). The catalytic mechanisms have been studied for the two reaction pathways (route 1 and route 2). The calculations indicate that the hydrogen atom transfer within the substrate oxidation part is the rate-determining step for both catalysts, in agreement with the experimental observation.