Quantum Mechanical Study on Tunnelling and Ballistic Transport of Nanometer Si MOSFETs

Using self-consistent calculations of million-atom Schrodinger-Poisson equations, we investigate the I-V characteristics of tunnelling and ballistic transport of nanometer metal oxide semiconductor field effect transistors (MOSFET) based on a full 3-D quantum mechanical simulation under nonequilibtium condition. Atomistic empirical pseudopotentials are used to describe the device Hamiltonian and the underlying bulk band structure. We find that the ballistic transport dominates the I-V characteristics, whereas the effects of tunnelling cannot be neglected with the maximal value up to 0.8mA/mu m when the channel length of MOSFET scales down to 25 nm. The effects of tunnelling transport lower the threshold voltage V-t. The ballistic current based on fully 3-D quantum mechanical simulation is relatively large and has small on-off ratio compared with results derived from the calculation methods of Luo et al.

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Made available in DSpace on 2010-05-24T07:16:42Z (GMT). No. of bitstreams: 1 Quantum Mechanical Study on Tunnelling and Ballistic Transport of Nanometer Si MOSFETs.pdf: 536125 bytes, checksum: d158f7542a67a02c324680b4771ba948 (MD5) Previous issue date: 2010

National Basic Research Program of China G2009CB929300 National Natural Science Foundation of China 60521001 60776061

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National Basic Research Program of China G2009CB929300 National Natural Science Foundation of China 60521001 60776061