Effects of the morphology of ZnO/Ag interface on the surface-plasmon-enhanced emission of ZnO films

The effects of the surface morphology of Ag on the surface-plasmon-enhanced emission of ZnO films have been studied for a ZnO/Ag/Si system by photoluminescence spectroscopy and atomic force microscopy. The results indicate that the enhancement of ZnO ultraviolet emission is dependent on the deposition conditions of the Ag interlayers. By examining the dependence of the enhancement ratio of surface-plasmon-mediated emission on the characteristic parameters of Ag surface morphology, we found that the surface plasmon coupling to light is determined by both the Ag particle size and density.

Tight intermolecular packing through supramolecular interactions in crystals of cyano substituted oligo(para-phenylene vinylene): a key factor for aggregation-induced emission

Strong supramolecular interactions, which induced tight packing and rigid molecules in crystals of cyano substituent oligo(para-phenylene vinylene) (CN-DPDSB), are the key factor for the high luminescence efficiency of its crystals; opposite to its isolated molecules in solution which have very low luminescence efficiency.

Energy transfer between Cr3+ and Ni2+ in transparent silicate glass ceramics containing Cr3+/Ni2+ co-doped ZnAl2O4 nanocrystals

The emission intensity of Ni2+ at 1200 nm in transparent ZnO-Al2O3-SiO2 glass ceramics containing ZnAl2O4 nanocrystals is improved approximately 8 times by Cr3+ codoping with 532 nm excitation. This enhanced emission could be attributed to an efficient energy transfer from Cr3+ to Ni2+, which is confirmed by time-resolved emission spectra. The energy transfer efficiency is estimated to be 57% and the energy transfer mechanism is also discussed. (C) 2008 Optical Society of America.

Tm:Y_2SiO_5晶体的生长和光谱性质研究

采用中频感应提拉法生长了高质量的Tm:Y2SiO5(Tm:YSO)晶体,测定了晶体的晶格常数和分凝系数.运用劳厄照相法确定了单斜晶系Tm:YSO晶体的三个偏振轴〈010〉,D1和D2,在室温下测量了三个偏振轴方向的吸收光谱、荧光光谱和荧光寿命,计算了晶体吸收峰的吸收线宽和吸收截面.研究发现,相对于其他两个偏振轴方向,D1方向在790 nm处出现较强的吸收峰,同时在2μm附近出现了一定强度的发射峰,D1方向的吸收截面较大,荧光寿命较长.Tm:YSO晶体适用于AlGaAs二极管抽运固体激光器,在2μm波段固体激光器的应用上将有很大的发展潜力.

Optical properties of semiconductor quantum-well material using photonic crystal fabricated by micro-fabrication machine

Two-dimensional photonic crystals in near infrared region were fabricated by using the focused ion beam ( FIB) method and the method of electron-beam lithography (EBL) combined with dry etching. Both methods can fabricate perfect crystals, the method of FIB is simple,the other is more complicated. It is shown that the material with the photonic crystal fabricated by FIB has no fluorescence,on the other hand, the small-lattice photonic crystal made by EBL combined with dry etching can enhance the extraction efficiency two folds, though the photonic crystal has some disorder. The mechanisms of the enhanced-emission and the absence of emission are also discussed.

ELECTRON-TRANSPORT THROUGH GAALAS BARRIERS IN GAAS

We have analyzed electronic transport through a single, 200-angstrom-thick, Ga0.74Al0.36As barrier embedded in GaAs. At low temperatures and high electric field, the Fowler-Nordheim regime is observed, indicating that the barrier acts as insulating layers. At higher temperatures the thermionic regime provides an apparent barrier height, decreasing with the field, which is equal to the expected band offset when extrapolated to zero field. However, for some samples, the current is dominated by the presence of electron traps located in the barrier. A careful analysis of the temperature and field behavior of this current allows to deduce that the mechanism involved is field-enhanced emission from electron traps. The defects responsible are tentatively identified as DX centers, resulting from the contamination of the barrier by donor impurities.

Synthesis of Tributylphosphate Capped Luminescent Rare Earth Phosphate Nanocrystals in an Ionic Liquid Microemulsion

Uniform rare earth phosphate (REPO4, RE = La-Tb) nanocrystals were successfully synthesized in a properly designed TBP/[Omim]Cl/H2O (tributylphosphate/1-octyl-3-methyl-imidazolium chloride/water) microemulsion system. The phosphoryl groups anchored the TBP molecules oil the surfaces of the nanocrystals, and this made the nanocrystals easily dispersed in some imidazolium-based ILs. LaPO4:Eu3+ and CePO4:Tb3+ nanocrystals capped with TBP showed bright red and green emission under UV excitation, with enhanced emission intensity and lifetimes compared with the uncapped ones.

Electrolummescence from (5)Do -> F-7(J) and D-5(1) -> F-7(J) (J=0-4) transitions with a europium complex as emitter

Electroluminescence (EL) devices with Eu(HTH)(3)phen [HTH: 4,4,5,5,6,6,6-heptafluoro-1-(2-thienyl)-1,3-hexanedione, phen: I 10-phenanthroline] as an emissive centre were fabricated using vacuum evaporation. In addition to the Eu3+ 5D0 --> F-7(J) (J = 0-4) lines that were visible in the photoluminescence signal, the device also showed strong emission from the D-5(1) --> F-7(J) (J = 0-4) transitions. The enhanced emission from the D-5(1) F-7(J) (J = 0-4) transitions was attributed to the increased excitation intensity in the EL device. The luminescence lifetimes of the 5 D, and 5 Do levels were measured to be 0.6 mus and 866 mus, respectively.

Enhanced near-infrared emission from Ni2+ in Cr3+ Ni2+ codoped transparent glass ceramics

Transparent Li2O-Ga2O3-SiO2 glass ceramics containing Cr3+/Ni2+ codoped LiGa5O8 nanocrystals were synthesized. The steady state emission spectra indicated that the near-infrared emission intensity of Ni2+ at 1300 nm in Cr3+/Ni2+ codoped glass ceramics was enhanced up to about 7.3 times compared with that in Ni2+ single-doped glass ceramics with 532 nm excitation. This enhancement in emission intensity was due to efficient energy transfer from Cr3+ to Ni2+, which was confirmed by time-resolved emission spectra. The energy transfer efficiency was estimated to be 85% and the energy transfer mechanism was discussed. (C) 2008 American Institute of Physics.

Surface plasmon enhanced ultraviolet emission from ZnO films deposited on Ag/Si(001) by magnetron sputtering

The ZnO films were grown on Ag/Si(001) substrates by sputtering Ag and ZnO targets successively in a pure Ar ambient. A significant enhancement of ZnO ultraviolet emission and a reduction of its full width of half maximum have been observed while introducing a 100 nm Ag interlayer between ZnO film and Si substrate. Furthermore, a complete suppression of the defect related visible emission was also found for the ZnO/Ag/Si sample. This improved optical performance of ZnO is attributed to the resonant coupling between Ag surface plasmon and ultraviolet emission of ZnO. (c) 2007 American Institute of Physics.