The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells

Photoluminescence (PL) spectra of GaInNAs/GaAs multiple quantum wells and GaInNAs epilayers grown on GaAs substrate show an apparent "S-shape" temperature-dependence of the of dominant luminescence peak. At low temperature and weak excitation conditions, a PL peak related to nitrogen cluster-induced bound states can be well resolved in the PL spectra. It displays a remarkable red shift of up to 60 meV and is thermally quenched below 100 K with increasing temperature, being attributed to N-cluster induced bound states. The indium incorporation exhibits significant effect on the cluster formation. The rapid thermal annealing treatment at 750 C can essentially remove the bound states-induced peak.

Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures

Confirmation of quantum dot lasing have been given by photoluminescence and electro-luminescence spectra. Energy levels of QD laser are distinctively resolved due to band filling effect, and the lasing energy of quantum dot laser is much lower than quantum well laser. The energy barrier at InAs/GaAs interface due to the built-in strain in self-organized system has been determined experimentally by deep level transient spectroscopy (DLTS). Such barrier has been predicted by previous theories and can be explained by the apexes appeared in the interface between InAs and GaAs caused by strain.

Photovoltage and luminescence study of stacked InAs/GaAs self-organized quantum dots

The ground and excited state excitonic transitions of stacked InAs self-organized quantum dots (QDs) in a laser diode structure are studied. The interband absorption transitions of QDs are investigated by non-destructive PV spectra, indicating that the strongest absorption is related to the excited states with a high density and coincides with the photon energy of lasing emission. The temperature and excitation (electric injection) intensity dependences of photoluminescence and electroluminescence indicate the influence of state filling effect on the luminescence of threefold stacked QDs. The results indicate that different coupling channels exist between electronic states in both vertical and lateral directions.

Observation of defects in GaN epilayers

GaN epilayers grown on sapphire substrates nitridated for various lengthy periods were investigated by light scattering tomography (LST) and Raman scattering. In the LST images of the plane-view epilayers, the light scattering defects distribute in [<11(2)over bar 0>] directions. The defect density is lower in epilayer grown on substrate nitridated for a longer period. The defects are believed to be straight threading edge dislocations on {<1(1)over bar 00>} planes. The Raman shift of E-2 mode is larger in the sample grown on substrate nitridated for a longer period. Our results show that the stress is higher in the sample with fewer dislocations.

Characterization of GaSb substrate wafers for MOCVD III-V antimonides

The qualities of GaSb substrates commonly used for the preparation of III-V antimonide epilayers were studied before and after growing GaInAsSb multi-layers by MOCVD using PL, FTIR and DCXD together with the electrical properties and EPD value. The correlation between the substrate qualities and epilayer properties was briefly discussed. The good property epilayers of GaInAsSb and, then, the high preformance of 2.3 um photodetectors were achieved only using the good quality GaSb wafers as the substrates.

Ultrahigh compression of water using intense heavy ion beams: laboratory planetary physics

Intense heavy ion beams offer a unique tool for generating samples of high energy density matter with extreme conditions of density and pressure that are believed to exist in the interiors of giant planets. An international accelerator facility named FAIR (Facility for Antiprotons and Ion Research) is being constructed at Darmstadt, which will be completed around the year 2015. It is expected that this accelerator facility will deliver a bunched uranium beam with an intensity of 5x10(11) ions per spill with a bunch length of 50-100 ns. An experiment named LAPLAS (Laboratory Planetary Sciences) has been proposed to achieve a low-entropy compression of a sample material like hydrogen or water (which are believed to be abundant in giant planets) that is imploded in a multi-layered target by the ion beam. Detailed numerical simulations have shown that using parameters of the heavy ion beam that will be available at FAIR, one can generate physical conditions that have been predicted to exist in the interior of giant planets. In the present paper, we report simulations of compression of water that show that one can generate a plasma phase as well as a superionic phase of water in the LAPLAS experiments.