Experimental investigation on low-temperature fatigue crack propagation in offshore structural steel A131 under random sea ice loading

An apparatus of low-temperature controlling for fatigue experiments and its crack measuring system were developed and used for offshore structural steel A131 under conditions of both low temperature and random sea ice. The experimental procedures and data processing were described, and a universal random data processing software for FCP under spectrum loading was written. Many specific features of random ice-induced FCP which differed with constant amplitude FCP behaviours were proposed and temperature effect on ice-induced FCP was pointed out with an easily neglected aspect in designing for platforms in sea ice emphasized. In the end, differences of FCP behaviours between sea ice and ocean wave were presented.

实时自适应量化法——逐级均值法

本文以跟踪电视系统中自适应量化器为设计背景,提出了一种新的、实时自适应的快速图象量化方法——逐极均值法,文中首先用Lloyd-Max最佳量化理论分析了这种量化方法的均方误差失真,讨沦了图象中存在孤立亮点时的处理方法。然后论述了这种量化方法应用于跟踪电视系统中的性能,即实现的简单、快速性;对照度变化的自适应性;及图象对比度增强效果。文中通过图象处理实验结果验证了这种量化方法的性能和理论分析的正确性。最后得出结论:逐极均值法量化器是一种能够代替LlodyMax最佳量化器的次佳量化器,这种量化器可以很好地满足跟踪电视系统中对自适应量化器的设计所提出的各方面性能要求;它对那些要求实现简单、实时自适应的量化器应用领域也将具有一定意义。

Teracluster LSSC-II - Its Designing Principles and Applications in Large Scale Numerical Simulations

The teracluster LSSC-II installed at the State Key Laboratory of Scientific and Engineering Computing, Chinese Academy of Sciences is one of the most powerful PC clusters in China. It has a peek performance of 2Tflops. With a Linpack performance of 1.04Tflops, it is ranked at the 43rd place in the 20th TOP500 List (November 2002), 51st place in the 21st TOP500 List (June 2003), and the 82nd place in the 22nd TOP500 List (November 2003) with a new Linpack performance of 1.3Tflops. In this paper, we present some design principles of this cluster, as well as its applications in some largescale numerical simulations.

Designing Of Partial Similarity Models And Evaluation Method In Polymer Flooding Experiment

Based on the scaling criteria of polymer flooding reservoir obtained in our previous work in which the gravity and capillary forces, compressibility, non-Newtonian behavior, absorption, dispersion, and diffusion are considered, eight partial similarity models are designed. A new numerical approach of sensitivity analysis is suggested to quantify the dominance degree of relaxed dimensionless parameters for partial similarity model. The sensitivity factor quantifying the dominance degree of relaxed dimensionless parameter is defined. By solving the dimensionless governing equations including all dimensionless parameters, the sensitivity factor of each relaxed dimensionless parameter is calculated for each partial similarity model; thus, the dominance degree of the relaxed one is quantitatively determined. Based on the sensitivity analysis, the effect coefficient of partial similarity model is defined as the summation of product of sensitivity factor of relaxed dimensionless parameter and its relative relaxation quantity. The effect coefficient is used as a criterion to evaluate each partial similarity model. Then the partial similarity model with the smallest effect coefficient can be singled out to approximate to the prototype. Results show that the precision of partial similarity model is not only determined by the number of satisfied dimensionless parameters but also the relative relaxation quantity of the relaxed ones.

Characteristics of flow fields induced by interfacial waves in two-layer fluid

When designing deep ocean structures, it is necessary to estimate the effects of internal waves on the platform and auxiliary parts such as tension leg, riser and mooring lines. Up to now, only a few studies are concerned with the internal wave velocity fields. By using the most representative two-layer model, we have analyzed the behavior of velocity field induced by interfacial wave in the present paper. We find that there may exist velocity shear of fluid particles in the upper and lower layers so that any structures in the ocean are subjected to shear force nearby the interface. In the meantime, the magnitude of velocity for long internal wave appears spatially uniform in the respective layer although they still decay exponentially. Finally, the temporal variation for Stokes and solitary waves are shown to be of periodical and pulse type.

Investigation on nonradiative decay of the (Er3+I13/2)-I-4 -> I-4(15/2) transition in different tellurite glass matrix

Three kinds of Er3+-doped tellurite glasses with different hydroxyl groups are prepared by the conventional melt-quenching method. Infrared spectra are measured to estimate the exact content of OH- groups in samples. The maximum phonon energy in glasses are obtained by measuring the Raman scattering spectra. The strength parameters Omega(t) (t = 2, 4, 6) for all the samples are calculated and compared. The nonradiative decay rate of the Er3+ I-4(13/2) -> I-4(15/2) transition are calculated for the glass samples with different phonon energy and OH- group contents. Finally, the effect of OH- groups on fluorescence decay rate of Er3+ is analysed, the constant KOH-Er Of TWN, TZPL and TZL glasses are calculated to be 9.2 x 10(-19) cm(4)s(-1), 5.9 x 10(-19) cm(4)s(-1), and 3.5 x 10(-19) cm(4)s(-1), respectively.

Effect of hydroxyl groups on nonradiative decay of Er3+: I-4(13/2)-> I-4(15/2) transition in zinc tellurite glasses

A series of zinc tellurite glasses of 75TeO(2)-20ZnO-(5-x)La2O3-xEr(2)O(3) (x=0.02, 0.05, and 0.1 mol%) with the different hydroxl groups were prepared by the conventional melt-quenching method. Infrared spectra were measured in order to estimate the exact content of OH- groups in samples. The observed increase of the fluorescence lifetime with the oxygen bubbling time has been related to the reduction in the OH- content concentration as evidenced by IR transmission spectra. Various nonradiative decay rates from I-4(13/2) of Er3+ with. the change of OH content were determined from the fluorescence lifetime and radiative decay rates were calculated on the basis of Judd-Ofelt theory. (c) 2005 Elsevier B.V. All rights reserved.

Decay lifetime and evolution of semiconductor quantum dots in photonic crystals

Spontaneous emission from GaAs/AlGaAs quantum dots (QDs) embedded in photonic crystals with a narrow photonic band gap is studied theoretically. The results show that the decay lifetime is very sensitive to the sizes of QDs, and both inhibited and accelerated emission can occur, which had been indicated in a previous experiment. The Weisskopf-Wigner approximation, good for atoms and molecules, may be incorrect for QDs. A damped Rabi oscillation of the excited state with the transition frequency outside the photonic band gap may appear, which is impossible for atoms and molecules. (c) 2008 Elsevier Ltd. All rights reserved.

Abnormal energy dependence of photoluminescence decay time in InGaN epilayer

We employ photoluminescence (PL) and time-resolved PL to study exciton localization effect in InGaN epilayers. By measuring the exciton decay time as a, function of the monitored emission energy at different temperatures, we have found unusual behaviour of the energy dependence in the PL decay process. At low temperature, the measured PL decay time increases with the emission energy. It decreases with the emission energy at 200K, and remains nearly constant at the intermediate temperature of 120K. We have studied the dot size effect on the radiative recombination time by calculating the temperature dependence of the exciton recombination lifetime in quantum dots, and have found that the observed behaviour can be well correlated to the exciton localization in quantum dots. This suggestion is further supported by steady state PL results.

Non-exponential photoluminescence decay dynamics of localized carriers in disordered InGaN/GaN quantum wells: the role of localization length

In this article, we report a combined experimental and theoretical study on the luminescence dynamics of localized carriers in disordered InGaN/GaN quantum wells. The luminescence intensity of localized carriers is found to exhibit an unusual non-exponential decay. Adopting a new model taking the radiative recombination and phonon-assisted hopping transition between different localized states into account, which was recently developed by Rubel et al., the non-exponential decay behavior of the carriers can be quantitatively interpreted. Combining with precise structure characterization, the theoretical simulations show that the localization length of localized carriers is a key parameter governing their luminescence decay dynamics. (c) 2006 Optical Society of America.

Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells

The influence of nonradiative recombination on the photoluminescence (PL) decay dynamics in GaInNAs/GaAs quantum wells is studied by time-resolved photoluminescence under various excitation intensities. It is found that the PL decay process strongly depends on the excitation intensity. In particular, under the moderate excitation levels the PL decay curves exhibit unusual nonexponential behavior and show a convex shape. By introducing a new parameter of the effective concentration of nonradiative recombination centers into a rate equation, the observed results are well simulated. The cw PL data further demonstrate the nonradiative recombination effect on the optical properties of GaInNAs/GaAs quantum wells. (c) 2006 American Institute of Physics.

Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z

The nonradiative recombination effect on the photoluminescence (PL) decay dynamics in GaInNAs/GaAs quantum wells is studied by photoluminescence and time-resolved photoluminescence under various excitation intensities and temperatures. It is found that the PL decay dynamics strongly depends on the excitation intensity. In particular, under the moderate excitation levels the PL decay curves exhibit unusual non-exponential behavior and show a convex shape. By introducing a new concept of the effective concentration of nonradiative recombination centers into a rate equation, the observed results are well simulated. In the cw PL measurement, a rapid PL quenching is observed even at very low temperature and is of the excitation power dependence. These results further demonstrate that the non-radiative recombination process plays a very important role on the optical properties of GaInNAs/GaAs quantum wells.