Effects of Particle Size on Dilute Particle Dispersion in a Karman Vortex Street Flow

It is shown that in a Karman vortex street flow, particle size influences the dilute particle dispersion. Together with an increase of the particle size, there is an emergence of a period-doubling bifurcation to a chaotic orbit, as well as a decrease of the corresponding basins of attraction. A crisis leads the attractor to escape from the central region of flow. In the motion of dilute particles, a drag term and gravity term dominate and result in a bifurcation phenomenon.

Streamline topology and dilute particle dynamics in a Karman vortex street flow

Three types of streamline topology in a Karman vortex street flow are shown under the variation of spatial parameters. For the motion of dilute particles in the Karman vortex street flow, there exist a route of bifurcation to a chaotic orbit and more attractors in a bifurcation diagram for the proportion of particle density to fluid density. Along with the increase of spatial parameters in the flow field, the bifurcation process is suspended, as well as more and more attractors emerge. In the motion of dilute particles, a drag term and gravity term dominate and result in the bifurcation phenomenon.

The kinetic-theory for dilute solid liquid 2-phase flow

On the basis of a brief review of the continuum theory for macroscopic descriptions and the kinetic theory for microscopic descriptions in solid/liquid two-phase flows, some suggestions are presented, i.e. the solid phase may be described by the Boltzmann equation and the liquid phase still be described by conservation laws in the continuum theory. Among them the action force on the particles by the liquid fluid is a coupling factor which connects the phases. For dilute steady solid/liquid two-phase flows, the particle velocity distribution function can be derived by analogy with the procedures in the kinetic theory of gas molecules for the equilibrium state instead of being assumed, as previous investigators did. This done, more detailed information, such as the velocity probability density distribution, mean velocity distribution and fluctuating intensity etc. can be obtained directly from the particle velocity distribution function or from its integration. Experiments have been performed for dilute solid/liquid two-phase flow in a 4 x 6 cm2 sized circulating square pipe system by means of laser Doppler anemometry so that the theories can be examined. The comparisons show that the theories agree very well with all the measured data.

Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles

High Curie temperature of 900 K has been reported in Cr-doped AlN diluted magnetic semiconductors prepared by various methods, which is exciting for spintronic applications. It is believed that N defects play important roles in achieving the high-temperature ferromagnetism in good samples. Motivated by these experimental advances, we use a full-potential density-functional-theory method and supercell approach to investigate N defects and their effects on ferromagnetism of (Al,Cr)N with N vacancies (V-N). We investigate the structural and electronic properties of V-N, single Cr atom, Cr-Cr atom pairs, Cr-V-N pairs, and so on. In each case, the most stable structure is obtained by comparing different atomic configurations optimized in terms of the total energy and the force on every atom, and then it is used to calculate the defect formation energy and study the electronic structures. Our total-energy calculations show that the nearest substitutional Cr-Cr pair with the two spins in parallel is the most favorable and the nearest Cr-V-N pair makes a stable complex. Our formation energies indicate that V-N regions can be formed spontaneously under N-poor condition because the minimal V-N formation energy equals -0.23 eV or Cr-doped regions with high enough concentrations can be formed under N-rich condition because the Cr formation energy equals 0.04 eV, and hence real Cr-doped AlN samples are formed by forming some Cr-doped regions and separated V-N regions and through subsequent atomic relaxation during annealing. Both of the single Cr atom and the N vacancy create filled electronic states in the semiconductor gap of AlN. N vacancies enhance the ferromagnetism by adding mu(B) to the Cr moment each but reduce the ferromagnetic exchange constants between the spins in the nearest Cr-Cr pairs. These calculated results are in agreement with experimental observations and facts of real Cr-doped AlN samples and their synthesis. Our first-principles results are useful to elucidate the mechanism for the ferromagnetism and to explore high-performance Cr-doped AlN diluted magnetic semiconductors.

Giant and zero electron g factors of dilute nitride semiconductor nanowires

The electronic structures and electron g factors of InSb1-sNs and GaAs1-sNs nanowires and bulk material under the magnetic and electric fields are investigated by using the ten-band k.p model. The nitrogen doping has direct and indirect effects on the g factors. A giant g factor with absolute value larger than 900 is found in InSb1-sNs bulk material. A transverse electric field can increase the g factors, which has obviously asymmetric effects on the g factors in different directions. An electric field tunable zero g factor is found in GaAs1-sNs nanowires. (C) 2007 American Institute of Physics.

Unusual carrier thermalization in a dilute GaAs1-xNx alloy

Photoluminescence (PL) properties of the E-0, E-0+Delta(0), and E+ bands in an x=0.62% GaAs1-xNx alloy were investigated in detail, including their peak position, linewidth, and line shape dependences on the excitation energy, excitation power, and temperature, using micro-PL. The hot electrons within the E+ band are found to exhibit highly unusual thermalization, which results in a large blueshift in its PL peak energy by >2k(B)T, suggesting peculiar density of states and carrier dynamics of the E+ band.

Photoluminescence from the nitrogen-perturbed above-bandgap states in dilute GaAs1-xNx alloys: A microphotoluminescence study

Using microphotoluminescence (mu-PL), in dilute N GaAs1-xNx alloys, we observe a PL band far above the bandgap E-0 with its peak energy following the so-called E+ transition, but with contribution from perturbed GaAs host states in a broad spectral range (> 100 meV). This finding is in sharp contrast to the general understanding that E+ is associated with a well-defined conduction band level (either L-1c or N-x). Beyond this insight regarding the strong perturbation of the GaAs band structure caused by N incorporation, we demonstrate that a small amount of isoelectronic doping in conjunction with mu-PL allows direct observation of above-bandgap transitions that are not usually accessible by PL.

Alloy states in dilute GaAs1-xNx alloys (x < 1%)

A set of GaAs1-xNx samples with small nitrogen composition (x<1%) were investigated by continuous-wave photoluminescence (PL), pulse-wave excitation PL, and time-resolved PL. In the PL spectra, an extra transition located at the higher-energy side of the commonly reported N-related emissions was observed. By measuring the PL dependence on temperature and excitation power, the PL peak was identified as a transition of alloy band edge-related recombination in GaAsN. The PL dynamics further confirms its intrinsic nature as being associated with the band edge rather than N-related bound states. (C) 2003 American Institute of Physics.

Resonant Raman Scattering and Photoluminescence Emissions from Above Bandgap Levels in Dilute GaAsN Alloy

The transitions of E0 ,E0 ＋A0, and E＋ in dilute GaAs（1-x） Nx alloys with x = 0.10% ,0.22% ,0.36% ,and 0.62% are observed by micro-photoluminescence. Resonant Raman scattering results further confirm that they are from the intrinsic emissions in the studied dilute GaAsN alloys rather than some localized exciton emissions in the GaAsN alloys. The results show that the nitrogen-induced E E＋ and E0 ＋ A0 transitions in GaAsN alloys intersect at a nitrogen content of about 0.16%. It is demonstrated that a small amount of isoelectronic doping combined with micro-photoluminescence allows direct observation of above band gap transitions that are not usually accessible in photoluminescence.

Photoemission evidence for dilute k-doped phase KxC（60） with x<0.2

于2010-11-23批量导入

Differential isospin-fractionation in dilute asymmetric nuclear matter

The differential isospin-fractionation (IsoF) during the liquid-gas phase transition in dilute asymmetric nuclear matter is studied as a function of nucleon momentum. Within a self-consistent thermal model it is shown that the neutron/proton ratio of the gas phase becomes smaller than that of the liquid phase for energetic nucleons, although the gas phase is overall more neutron-rich. Clear indications of the differential IsoF consistent with the thermal model predictions are demonstrated within a transport model for heavy-ion reactions. Future comparisons with experimental data will allow us to extract critical information about the momentum dependence of the isovector strong interaction.

Effect of binary block-selective solvents on self-assembly of ABA triblock copolymer in dilute solution

We have studied the self-assembly of the ABA triblock copolymer (P4VP-b-PS-b-P4VP) in dilute solution by using binary block-selective solvents, that is, water and methanol. The triblock copolymer was first dissolved in dioxane to form a homogeneous solution. Subsequently, a given volume of selective solvent was added slowly to the solution to induce self-assembly of the copolymer. It was found that the copolymer (P4VP(43)-b-PS366-b-P4VP(43)) tended to form spherical aggregate or bilayer structure when we used methanol or water as the single selective solvent, respectively.

Study of controllable aggregation morphology of ABA amphiphilic triblock copolymer in dilute solution by changing the solvent property

We have studied, both experimentally and theoretically, the aggregation morphology of the ABA amphiphilic triblock copolymer in dilute solution by changing the solvent property. Experimental results showed that the micellar morphology changed from spheres to rods and then to vesicles by changing the common solvent from N-N-dimethylformamide (DMF) to dioxane and then to tetrahydrofuran (THF). These controllable aggregates were also obtained by Monte Carlo simulation. The simulative results showed that the solvent property is a key factor that determines the copolymer aggregation morphology. The morphology changed from spheres to rods and then to vesicles by increasing the solvent solubility, corresponding to the change of stretched of the copolymer chains in the micellar cores. This result is in good agreement with the experimental one. Moreover, the simulative results revealed that the end-to-end distant of the ABA triblock copolymer in the vesicle was larger than that in the spheres and rods, indicating that the copolymer chains were more stretched in vesicles than in the spheres and rods. Furthermore, we gave the distribution of the fraction of the chain number with the end-to-end distance. The results indicated that the amount of folded chains is almost the same as that of stretched chains in the vesicle. Although most chains were folded, stretched chains could be found in the rod and sphere micelles.