Resonant Raman Scattering and Photoluminescence Emissions from Above Bandgap Levels in Dilute GaAsN Alloy
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2006
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Resumo |
The transitions of E0 ,E0 +A0, and E+ in dilute GaAs(1-x) Nx alloys with x = 0.10% ,0.22% ,0.36% ,and 0.62% are observed by micro-photoluminescence. Resonant Raman scattering results further confirm that they are from the intrinsic emissions in the studied dilute GaAsN alloys rather than some localized exciton emissions in the GaAsN alloys. The results show that the nitrogen-induced E E+ and E0 + A0 transitions in GaAsN alloys intersect at a nitrogen content of about 0.16%. It is demonstrated that a small amount of isoelectronic doping combined with micro-photoluminescence allows direct observation of above band gap transitions that are not usually accessible in photoluminescence. The transitions of E0 ,E0 +A0, and E+ in dilute GaAs(1-x) Nx alloys with x = 0.10% ,0.22% ,0.36% ,and 0.62% are observed by micro-photoluminescence. Resonant Raman scattering results further confirm that they are from the intrinsic emissions in the studied dilute GaAsN alloys rather than some localized exciton emissions in the GaAsN alloys. The results show that the nitrogen-induced E E+ and E0 + A0 transitions in GaAsN alloys intersect at a nitrogen content of about 0.16%. It is demonstrated that a small amount of isoelectronic doping combined with micro-photoluminescence allows direct observation of above band gap transitions that are not usually accessible in photoluminescence. 于2010-11-23批量导入 zhangdi于2010-11-23 13:03:19导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-23T05:03:19Z (GMT). No. of bitstreams: 1 4299.pdf: 453898 bytes, checksum: 5fc1a9e4cda1541d947c98860843371c (MD5) Previous issue date: 2006 国家自然科学基金,国家重点基础研究专项基金,江苏省自然科学基金,香港RGC基金,美国ODE基金资助项目 Institute of Semiconductors,Chinese Academy of Sciences;Department of Physics, Hong Kong University of Science and Technology;National Renewable Energy Laboratory;Department of Electrical and Computer Engineering,University of California at San Diego 国家自然科学基金,国家重点基础研究专项基金,江苏省自然科学基金,香港RGC基金,美国ODE基金资助项目 |
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Idioma(s) |
英语 |
Fonte |
Tan P H;Luo X D;Ge W K;Xu Z Y;Zhang Y;Mascarenhas A;Xin H P;Tu C W.Resonant Raman Scattering and Photoluminescence Emissions from Above Bandgap Levels in Dilute GaAsN Alloy,半导体学报,2006,27(3):397-402 |
Palavras-Chave | #半导体物理 |
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期刊论文 |