Photoluminescence from the nitrogen-perturbed above-bandgap states in dilute GaAs1-xNx alloys: A microphotoluminescence study
Data(s) |
2006
|
---|---|
Resumo |
Using microphotoluminescence (mu-PL), in dilute N GaAs1-xNx alloys, we observe a PL band far above the bandgap E-0 with its peak energy following the so-called E+ transition, but with contribution from perturbed GaAs host states in a broad spectral range (> 100 meV). This finding is in sharp contrast to the general understanding that E+ is associated with a well-defined conduction band level (either L-1c or N-x). Beyond this insight regarding the strong perturbation of the GaAs band structure caused by N incorporation, we demonstrate that a small amount of isoelectronic doping in conjunction with mu-PL allows direct observation of above-bandgap transitions that are not usually accessible by PL. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Tan PH (Tan P. H.); Luo XD (Luo X. D.); Xu ZY (Xu Z. Y.); Zhang Y (Zhang Y.); Mascarenhas A (Mascarenhas A.); Xin HP (Xin H. P.); Tu CW (Tu C. W.); Ge WK (Ge W. K.) .Photoluminescence from the nitrogen-perturbed above-bandgap states in dilute GaAs1-xNx alloys: A microphotoluminescence study ,PHYSICAL REVIEW B,2006,73(20):Art.No.205205 |
Palavras-Chave | #半导体物理 #HOT PHOTOLUMINESCENCE #GALLIUM-ARSENIDE #GAAS #SEMICONDUCTORS #LUMINESCENCE #SCATTERING |
Tipo |
期刊论文 |