Desorption and Ripening of Low Density InAs Quantum Dots

In this paper, combining low deposition rate with proper growth temperature, we have developed a way to prepare very low-density quantum dots (QDs) suited for the study of single OD properties without resorting to submicron lithography. Experiment results demonstrate that InAs desorption is significant during growing the low density QDs. Ripening of InAs QDs is clearly observed during the post-growth annealing. Photoluminescence spectroscopy reveals that the emission wavelength of low density InAs QDs arrives at 1332.4 nm with a GaAs capping layer.

Design and Fabrication of a Photonic Crystal Channel Drop Filter Based on an Asymmetric Silicon-on-Insulator Slab

We report on the design and fabrication of a photonic crystal (PC) channel drop filter based on an asymmetric silicon-on-insulator (SOI) slab. The filter is composed of two symmetric stick-shape micro-cavities between two single-line-defect (W1) waveguides in a triangular lattice, and the phase matching condition for the filter to improve the drop efficiency is satisfied by modifying the positions and radii of the air holes around the micro-cavities. A sample is then fabricated by using electron beam lithography (EBL) and inductively coupled plasma (ICP) etching processes. The measured 0 factor of the filter is about 1140, and the drop efficiency is estimated to be 73% +/- 5% by fitting the transmission spectrum.

Experimental Demonstration on Structure-Parameter Dependence of Photonic Crystal Optical Spectrum

We present fabrication and experimental measurement of a series of photonic crystal waveguides and coupled structure of PC waveguide and PC micro-cavity. The complete devices consist of an injector taper down from 3 mu m into a triangular-lattice air-holes single-line-defect waveguide. We fabricated these devices on a silicon-on-insulator substrate and characterized them using tunable laser source. We've obtained high-efficiency light propagation and broad flat spectrum response of photonic-crystal waveguides. A sharp attenuation at photonic crystal waveguide mode edge was observed for most structures. The edge of guided band is shifted about 31 nm with the 10 nm increase of lattice constant. Mode resonance was observed in coupled structure. Our experimental results indicate that the optical spectra of photonic crystal are very sensitive to structure parameters.

Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers

In this work, InAs quantum dots (QDs) grown on a linear graded InGaAs metamorphic buffer layer by molecular beam epitaxy have been investigated. The growth of the metamorphic buffer layers was carefully optimized, yielding a smooth surface with a minimum root mean square of roughness of less than 0.98 nm as measured by atomic force microscopy (AFM). InAs QDs were then grown on the buffer layers, and their emission wavelength at room-temperature is 1.49 mu m as measured by photoluminescence (PL). The effects of post-growth rapid thermal annealing (RTA) on the optical properties of the InAs QDs were investigated. After the RTA, the PL peak of the QDs was blue-shifted and the full width at half maximum decreased.

Influence of heat treatment on spectroscopic properties of Er3+ in multicomponent ZrF4-ZnF2-AlF3-YF3-MF2 (M = Ca, Sr, Ba) based glass

Er3+ doped multicomponent fluoride based glass was prepared. These precursor fluoride glass samples were then heated using different schedules. Crystalline phase particles were successfully precipitated in the multicomponent fluoride glass samples after heat treatment. The influence of heat treatment on the spectroscopic properties of Er3+ in multicomponent fluoride based glass samples were discussed. Small changes of the Judd-Ofelt parameters Omega(i) (i = 2,4,6) were found in multicomponent fluoride glass samples before and after heat treatment compared to oxyfluoride telluride glass. Preparation conditions used to produce transparent multicomponent fluoride glass ceramics doped with rare-earth ions are discussed. (c) 2007 Elsevier B.V. All rights reserved.

Ca 2+对叶绿体膜流动性及光系统II叶绿素蛋白质复合物的影响

通过实验我们证明Ca2+对叶绿体膜的流动性，对PS I和PS II叶绿素蛋白质复合物的相对含量，以及PS I和PS II的多肽均有影响。 Ca2+对叶绿体膜表层的流动性影响不大，但降低了叶绿体膜深层脂质分子的流动性。从另一个角度阐明了Ca2+抑制光能从PS II向PS I传递的机制。 Ca2+可使PS I的21，23，110KD的多肽转移至PS II，LHCP1和LHCP2中的CF1的两个亚基（55，60KD）转至CPa和LHCP3，从而增加了PS II的捕光截面，引起激发能在两个系统之间的分配的改变。 用免疫学方法可以证明CPIa2和LHCP2的Ab为复合抗体，CPIa1的Ab为单抗，我们可以推测向日葵的不同叶绿素蛋白质复合物具有同源性。

Ca~（＋＋）Na~＋离子对湖南产五步蛇蛇毒PLA_2酶活力的影响

Ｃａ~（＋＋）离子能极大地激活五步蛇蛇毒ＰＬＡ_２的酶活力，Ｎａ离子只能在一定程度上激活，作者推测在测定ＰＬＡ_２酶活力的底物溶液中可以不加Ｎａ~＋离子。

外源Ca~(2+)对模拟微重力环境中鱼腥藻细胞质膜透性和光合特性的影响

以鱼腥藻为材料 ,研究了外源Ca2 +对模拟微重力环境中微藻细胞膜透性的影响。实验结果表明 :提高培养基中的Ca2 +浓度可减轻由模拟微重力造成的膜透性增大 ,有助于稳定细胞膜结构和功能。同时 ,外源Ca2 +降低了藻细胞光系统Ⅱ (PSⅡ )的光化学效率 (以荧光参数Fv/Fm表示 )下降的幅度 ,表明外源Ca2 +对模拟微重力环境下鱼腥藻细胞光合作用的损伤 ,有良好的防护效应。

利用水生植物清除水体中放射性物质的研究 (Ⅲ)水生植物对Sr~(90)、Y~(91)、Cs~(137)、Ce~(144)的积累、释放及Ca���Sr~(90)吸收的影响

5种水生植物对所用4种放射性同位素都有一定的清除能力,其清除能力的大小不仅取决于生物的种类,而且还取决于生物本身代谢率的高低。试验结果:去污率高的可达80%,积累系数最高可达1,500;水体中含Ca���的多少对生物吸收积累放射性物质的多少有一定的影响;生物在积累放射性物质之后,转移到无放射性物质的水体中将释放出原积累的一部分放射性物质。

New observations on the pressure dependence of luminescence from Eu2+-doped MF2 (M = Ca, Sr, Ba) fluorides

The luminescence from Eu2+ ions in MF2 (M = Ca, Sr, Ba) fluorides has been investigated under the pressure range of 0-8 GPa. The emission band originating from the 4f(6)5d(1) -> 4f(7) transition of Eu2+ ions in CaF2 and SrF2 shows the red-shift as increasing pressure with pressure coefficients of -17 meV/GPa for CaF2 and -18 meV/GPa for SrF2. At atmospheric pressure, the emission spectrum of BaF2:Eu2+ comprises two peaks at 2.20 and 2.75 eV from the impurity trapped exciton (ITE) and the self-trapped exciton (STE), respectively. As the pressure is increased, both emission peaks shift to higher energies, and the shifting rate is slowed by the phase transition from the cubic to orthorhombic phase at 4 GPa. Due to the phase transition at 4-5 GPa pressure, the ITE emission disappears gradually, and the STE emission is gradually replaced by the 4f(6)5d(1) -> 4f(7) transition of Eu2+. Above 5 GPa, the pressure behavior of the 4f(6)5d(1) -> 4f(7) transition of EU2+ in BaF2: EU2+ is the same as the normal emission of Eu2+ in CaF2 and SrF2 phosphors.