Role of different cap layers tuning the wavelength of self-assembled InAs/GaAs quantum dots

We have investigated the effect of different cap layers on the photoluminescence (PL) of self-assembled InAs/GaAs quantum dots (QDs). Based upon different cap layers, the wavelength of InAs QDs can be tuned to the range from 1.3 to 1.5 mum. An InAlAs and InGaAs combination layer can enlarge the energy separation between the ground and first excited radiative transition. GaAs/InAs short period superlattices (SLs) make the emission wavelength shift to 1.53 mum. The PL intensity of InAs QDs capped with GaAs/InAs SLs shows an anomalous increase with increasing temperature. We attribute this to the transfer of carriers between different QDs.

Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots

We have investigated the effect of InAlAs/InGaAs cap layer on the optical properties of self-assembled InAs/GaAs quantum dots (QDs). We find that the photoluminescence emission energy, linewidth and the energy separation between the ground and first excited states of InAs QDs depend on the In composition and the thickness of thin InAlAs cap layer. Furthermore, the large energy separation of 103 meV was obtained from InAs/GaAs QDs with emission at 1.35 pm at room temperature. (C) 2002 Elsevier Science B.V. All rights reserved.

Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability

The effects of annealing time and Si cap layer thickness: on the thermal stability of the Si/SiGe/Si heterostructures deposited by disilane and solid-Ge molecule beam epitaxy were investigated. It is found that in the same strain state of the SiGe layers the annealing time decreases with increasing Si cap layer thickness. This effect is analyzed by a force-balance theory and an equation has been obtained to characterize the relation between the annealing time and the Si cap layer thickness. (C) 2001 Elsevier Science B.V. All rights reserved.

Influence of InxGa1-xAs (0 <= x <= 0.3) cap layer on structural and optical properties of self-assembled InAs/GaAs quantum dots

Optical and structural properties of self-organized InAs/GaAs quantum dots (QDs) with InxGa1-xAs or GaAs cover layers grown by molecular beam epitaxy (MBE) have been characterized by transmission electron microscopy (TEM), atomic force microscopy (AFM) and photoluminescence (PL) measurements. The TEM and AFM images show that the surface stress of the InAs QDs was suppressed by overgrowth of a InxGa1-xAs covering layer on the top of the QDs and the uniformity of the QDs preserved. PL measurements reveal that red shifts of the PL emission due to the reduction of the surface strain of the InAs islands was observed and the temperature sensitivity of the PL emission energy was suppressed by overgrowth of InxGa1-xAs layers compared to that by overgrowth of GaAs layers.

The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses

This paper studies the exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses by low temperature photoluminescence (PL) measurements With increasing cap layer thickness, the PL peak energy shifts to lower energy and the coupling strength between the exciton and longitudinal-optical (LO) phonon, described by Huang-Rhys factor, increases remarkably due to an enhancement of the internal electric field With increasing excitation intensity, the zero-phonon peak shows a blueshift and the Huang-Rhys factor decreases These results reveal that there is a large built-in electric field in the well layer and the exciton-LO phonon coupling is strongly affected by the thickness of the cap layer

ENHANCEMENT EFFECT OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIN CAPPING LAYER ON DIELECTRIC CAP QUANTUM-WELL DISORDERING

Quantum well disordering of GaAs/AlGaAs multiple quantum well(MQW) has been accomplished with only plasma enhanced chemical vapor deposited (PECVD) SiN cap layer growth. The amount of blue shift increases with SiN growing time. This result has been explained by the vacancy indiffusion during PECVD SiN growth. Rapid thermal annealing (RTA) of the sample after SiN cap layer growth at 850 degrees C for 35 s caused a larger amount of blue shift than those obtained without RTA. By considering the model of Al diffusion from AlGaAs barrier into GaAs QWs together with the result from photoluminescence (PL) measurement, Al diffusion coefficients were calculated. The Al diffusion coefficient due to PECVD SiN was estimated at about 3 x10(-17) cm(2)/s. It was possible to extract the effect of RTA on the QW disordering, which showed that the amount of the blue shift and the Al diffusion coefficient due only to RTA increases with SiN cap layer thickness as reported by Chi et al.(10))

Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability

The effects of annealing time and Si cap layer thickness: on the thermal stability of the Si/SiGe/Si heterostructures deposited by disilane and solid-Ge molecule beam epitaxy were investigated. It is found that in the same strain state of the SiGe layers the annealing time decreases with increasing Si cap layer thickness. This effect is analyzed by a force-balance theory and an equation has been obtained to characterize the relation between the annealing time and the Si cap layer thickness. (C) 2001 Elsevier Science B.V. All rights reserved.

Instability Of Plane Poiseuille Flow In A Fluid-Porous System

The instability of Poiseuille flow in a fluid-porous system is investigated. The system consists of a fluid layer overlying porous media and is subjected to a horizontal plane Poiseuille flow. We use Brinkman's model instead of Darcy's law to describe the porous layer. The eigenvalue problem is solved by means of a Chebyshev collocation method. We study the influence of the depth ratio (d) over cap and the Darcy number delta on the instability of the system. We compare systematically the instability of Brinkman's model with the results of Darcy's model. Our results show that no satisfactory agreement between Brinkman's model and Darcy's model is obtained for the instability of a fluid-porous system. We also examine the instability of Darcy's model. A particular comparison with early work is made. We find that a multivalued region may present in the (k, Re) plane, which was neglected in previous work. Here k is the dimensionless wavenumber and Re is the Reynolds number. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3000643]

海底管线地基土体塑性及剪切破坏分析

提出一种分析管线地基极限承载力的平面应变有限元模拟方法,采用自适应网格技术和接触对算法模拟管线嵌入土体的准静态过程,利用修正Drucker-Prager/Cap本构模型模拟土体塑性。研究不同土性和管土界面摩擦条件下,管线地基土体的塑性变形及位移场特性。利用载荷沉降曲线并结合地基塑性应变分布图和位移矢量图,可判别管线地基的剪切破坏型式、确定地基极限承载力。

DNA拓扑异构酶Ⅱ与ⅠA的进化分析

DNA拓扑异构酶与断开DNA链和改变其拓扑结构有关。先前的研究认为,拓扑异构酶TypeⅡB是由TypeⅡA通过基因的复制、重组和缺失所造成。然而,本研究结果则显示,TypeⅠA与TypeⅡB的进化关系较近,而TypeⅡA与TypeⅡB的关系较远。因此,TypeⅡB可能是由TypeⅠA演化而来,或者说,TypeⅡB是TypeⅠA在古细菌中的特化形式;TypeⅡB可能是由TypeⅡA通过形成TypeⅠA后演化而成的,而不是由TypeⅡA直接通过基因的复制、重组和缺失所造成。在由TypeⅡA演化成为TypeⅠA,最后演化为TypeⅡB的过程中,DNA拓扑异构酶的催化机制也发生了变化从需要金属离子的协助,演化到了不需要镁离子的存在协助其催化。

Taxonomic review of the genus Sinocrossocheilus Wu (Teleostei : Cyprinidae), with a description of four new species

All Sinocrossocheilus species, except S. microstomatus, are reviewed. Four new species, S. labiata, S. papillolabra, S. nigrovittata, and S. longibulla, are described. The genus Sinocrossocheilus differs from other genera of Cyprinidae by the last simple dorsal fin ray being unserrated and unossified, the last unbranched anal fin ray being unserrated and unossified, the 5-branched anal fin rays, the mouth gap being inferior, the rostral cap covering the lower jaw and connecting directly with the lower lip, a row of fleshy lobes on the lower jaw, and a cloudy black spot above the pectoral fin. Sinocrossocheilus labiata is small and has 22 predorsal scales; S. longibulla has a very large air bladder; S. papillolabra possesses a well-developed ventral fin and a wide band covered by fleshy papillae on the lower lip; and S. nigrovittata possesses black longitudinal stripes along the lateral line. Crossocheilus bamaensis and Crossocheilus liuchengensis are transferred to the genus Sinocrossocheilus. Sinocrossocheilus species are endemic to the central and eastern Yunnan-Guizhou Plateau of China, where river systems are anfractuous, including seasonal rivers, cave rivers, underground rivers, and streamlets between mountains. These separated rivers probably provide conditions for the allopatric speciation of the Sinocrossocheilus.

Identification and characterization of Bacillus anthracis by multiplex PCR on DNA chip

Bacillus anthracis can be identified by detecting virulence factor genes located on two plasmids, pXO1 and pXO2. Combining multiplex PCR with arrayed anchored primer PCR and biotin-avidin alkaline phosphatase indicator system, we developed a qualitative DNA chip method for characterization of B. anthracis, and simultaneous confirmation of the species identity independent of plasmid contents. The assay amplifies pag gene (in pXO1), cap gene (in pXO2) and Ba813 gene (a B. anthracis specific chromosomal marker), and the results were indicated by an easy-to-read profile based on the color reaction of alkaline phosphatase. About 1 pg of specific DNA fragments on the chip wells could be detected after PCR. With the proposed method, the avirulent (pXO1(+)/2(-), pXO1(-)/2(+) and pXO1(-)/2(-)) strains of B. anthracis and distinguished 'anthrax-like' strains from other B. cereus group bacteria were unambiguously identified, while the genera other than Bacillus gave no positive signal. (C) 2004 Elsevier B.V. All rights reserved.

Mechanism on Effect of Surface Plasmons Coupling with InGaN/GaN Quantum Wells: Enhancement and Suppression of Photoluminescence Intensity

The photoluminescence (PL) intensity enhancement and suppression mechanism on surface plasmons (SPs) coupling with InGaN/GaN quantum wells (QWs) have been systematically studied. The SP-QW coupling behaviors in the areas of GaN cap layer coated with silver thin film were compared at different temperatures and excitation powers. It is found that the internal quantum efficiency (IQE) of the light emitting diodes (LEDs) varies with temperature and excitation power, which in turn results in anomalous emission enhancement and suppression tendency related to SP-QW coupling. The observation is explained by the balance between the extraction efficiency of SPs and the IQE of LEDs

Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition

Photoluminescence (PL) and lasing properties of InAs/GaAs quantum dots (QDs) with direrent growth procedures prepared by metalorganic chemical vapour deposition are studied. PL measurements show that the low growth rate QD sample has a larger PL intensity and a narrower PL line width than the high growth rate sample. During rapid thermal annealing, however, the lowgrowth rate sample shows a greater blue shift of PL peak wave length. This is caused by the larger InAs layer thickness which results from the larger 2-3 dimensional transition critical layer thickness for the QDs in the low-growth-rate sample. A growth technique including growth interruption and in-situ annealing, named indium flush method, is used during the growth of GaAs cap layer, which can flatten the GaAs surface effectively. Though the method results in a blue shift of PL peak wavelength and a broadening of PL line width, it is essential for the fabrication of room temperature working QD lasers.