Mechanism on Effect of Surface Plasmons Coupling with InGaN/GaN Quantum Wells: Enhancement and Suppression of Photoluminescence Intensity

The photoluminescence (PL) intensity enhancement and suppression mechanism on surface plasmons (SPs) coupling with InGaN/GaN quantum wells (QWs) have been systematically studied. The SP-QW coupling behaviors in the areas of GaN cap layer coated with silver thin film were compared at different temperatures and excitation powers. It is found that the internal quantum efficiency (IQE) of the light emitting diodes (LEDs) varies with temperature and excitation power, which in turn results in anomalous emission enhancement and suppression tendency related to SP-QW coupling. The observation is explained by the balance between the extraction efficiency of SPs and the IQE of LEDs

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This work was supported by the grants of the National Natural Science Foundation (Nos. 10704052, 60776065, and 60776003), Suzhou High-Tech Research Program (ZXG0712) and the Chinese Basic Research program (973 No. 2007CB936701) from the Chinese Science and Technology Ministry.

国内

This work was supported by the grants of the National Natural Science Foundation (Nos. 10704052, 60776065, and 60776003), Suzhou High-Tech Research Program (ZXG0712) and the Chinese Basic Research program (973 No. 2007CB936701) from the Chinese Science and Technology Ministry.