Enhanced apoptotic action of trichosanthin in HIV-1 infected cells

Trichosanthin (TCS) is a type 1 ribosome-inactivating protein (RIP) effective against HIV-1 replication. The mechanism is not clear. Present results suggested that the antiviral action tray be partly mediated through enhanced apoptosis on infected cells. TCS induced apoptosis in normal H9 cells and this action was more potent in those infected with HIV-1. In flow cytometry study, TCS induced larger population of apoptotic H9 cells chronically infected with HIV-1 in a dose-dependent manner. At TCS concentration of 25 mu g/ml. 8.4% of normal H9 cells were found to be apoptotic whereas the same concentration induced 24.5% in HIV-1 chronically infected cells. Such difference was not found in the control experiments without TCS treatment. Two other studies supported this action. Cytotoxic study showed that cell viability was always lower in HIV-1 infected cells after TCS treatment, and DNA fragmentation studs confirmed more laddering in infected cells. The mechanism of TCS induced apoptosis in normal or infected H9 cells is not clear. Results in this study demonstrated that TCS is snore effective in inducing apoptosis in HIV-1 infected cells. This may explain in part the antiviral action of TCS. (c) 2005 Elsevier Inc. All rights reserved.

Indole and carbazole alkaloids from Glycosmis montana with weak anti-HIV and cytotoxic activities

A diprenylated indole, (E)-3-(3-hydroxymethyl-2-butenyl)-7-(3-methyl-2-butenyl)-1H-indole (1), and six known carbazole alkaloids were isolated from the twigs and leaves of Glycosmis montana Pierre (Rutaceae). Their structures were determined on the basis of analysis of spectral evidence including 1D and 2D NMR and MS. The alkaloids (1-3) exhibited weak to moderate take in vitro inhibitory activity against HIV replication in C8166 cells, and they (as well as carbalexine A and B) had cytotoxic activity against the human leukaemia cell line CCRF-CEM. (c) 2005 Elsevier Ltd. All rights reserved.

Effects of tetrabrominated diphenyl ether and hexabromocyclododecanes in single and complex exposure to hepatoma HepG2 cells

This study was designed to determine cytotoxic effects of PBDE-47 and HBCDs individually or with a mixture of both compounds exposure to Hep G2 cells. The results showed PBDE-47 and HBCDs induced increase of nitric oxide synthase (NOS) activity, release of NO. dissipation of mitochondria membrane potential and cell apoptosis. Exposure to HBCDs induced ROS formation. Moreover, preincubation with PTIO (NO scavanger) and N-acetylcysteine (ROS scavanger) partially reversed cytotoxic effects of these compounds. The possible mechanism is that PBDE-47 and HBCDs could boost generation of NO and/or ROS, impact mitochondria, and result in start-ups of apoptosis program. Cells exposed to mixture of both compounds and each of them showed non-apoptotic rate significant difference, but the combination of them caused more adverse effects on cells. These results Suggest that PBDE-47 and HBCDs in single and complex exposure have the cytotoxic activity of anti-proliferation and induction of apoptosis in tumor cells in vitro. (C) 2008 Elsevier B.V. All rights reserved.

Transition films from amporphous to microcrystalline silicon and solar cells

A series of hydrogenated silicon films near the threshold of crystallinity was prepared by very high frequency plasmaenhanced chemical vapor deposition (VHF-PECVD)from a mixture of SiH4 diluted in H-2. The effect of hydrogen dilution ratios R = [H-2]/[SiH4] on the microstructure of the films was investigated. The photoelectronic properties and stability of the films were studied as a function of crystalline fraction. The results show that the diphasic films gain both the fine photoelectric properties like a-Si: H and high stability like mu w-Si:H. By using the diphasic silicon films as the intrinsic layer, p-i-n junction solar cells were prepared. Current-voltage (J-V) characteristics and stability of the solar cells were measured under an AM1.5 solar simulator. We observed a light-induced increase of 5.2% in the open-circuit voltage (V-oc) and a light-induced degradation of similar to 2.9% inefficiency.

Light-induced changes in diphasic nanocrystalline silicon films and solar cells

A series of diphasic nanocrystalline silicon films and solar cells was prepared using different hydrogen dilution ratios of silane by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). It was observed that after light soaking the open circuit voltage (V-oc) of the diphasic solar cells increased, while that of amorphous silicon solar cells decreased. Raman scattering spectroscopy was performed on the series of diphasic silicon films before and after light soaking. It was found that after light soaking the nanostruclures in the diphasic nanocrystalline silicon films were changed. Both the grain sizes and grain volume fraction reduced, while the grain boundary components increased. These results provide experimental evidence for the conjecture that the light-induced increase in V-oc of the diphasic nanocrystalline solar cells might be induced by the changes in the nanostructure of the intrinsic layer. (c) 2006 Elsevier B.V. All rights reserved.

Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers

Hydrogenated nanocrystalline silicon (nc-Si:H) n-layers have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) wafers. The nc-Si:H n-layers were deposited by radio-frequency (RF) plasma enhanced chemical vapor deposition (PECVD), and characterized using Raman spectroscopy, optical transmittance and activation energy of dark-conductivity. The nc-Si:H n-layers obtained comprise fine grained nanocrystallites embedded in amorphous matrix, which have a wider bandgap and a smaller activation energy. Heterojunction solar cells incorporated with the nc-Si n-layer were fabricated using configuration of Ag (100 nm)/1T0 (80 nm)/n-nc-Si:H (15 nm)/buffer a-Si:H/p-c-Si (300 mu m)/Al (200 nm), where a very thin intrinsic a-Si:H buffer layer was used to passivate the p-c-Si surface, followed by a hydrogen plasma treatment prior to the deposition of the thin nanocrystalline layer. The results show that heterojunction solar cells subjected to these surface treatments exhibit a remarkable increase in the efficiency, up to 14.1% on an area of 2.43 cm(2). (c) 2006 Elsevier B.V. All rights reserved.

Preparation and characterization of GaN films by radio frequency magnetron sputtering and carbonized-reaction technique

Radio frequency magnetron sputtering/post-carbonized-reaction technique was adopted to prepare good-quality GaN films on Al2O3(0 0 0 1) substrates. The sputtered Ga2O3 film doped with carbon was used as the precursor for GaN growth. X-ray diffraction (XRD) pattern reveals that the film consists of hexagonal wurtzite GaN. X-ray photoelectron spectroscopy (XPS) shows that no oxygen can be detected. Electrical and room-temperature photoluminescence measurements show that good-quality polycrystalline GaN films were successfully grown on Al2O3(0 0 0 1) substrates. (c) 2005 Elsevier B.V. All rights reserved.

Light-induced changes in diphasic nanocrystalline silicon films and solar cells

A series of diphasic nanocrystalline silicon films and solar cells was prepared using different hydrogen dilution ratios of silane by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). It was observed that after light soaking the open circuit voltage (V-oc) of the diphasic solar cells increased, while that of amorphous silicon solar cells decreased. Raman scattering spectroscopy was performed on the series of diphasic silicon films before and after light soaking. It was found that after light soaking the nanostruclures in the diphasic nanocrystalline silicon films were changed. Both the grain sizes and grain volume fraction reduced, while the grain boundary components increased. These results provide experimental evidence for the conjecture that the light-induced increase in V-oc of the diphasic nanocrystalline solar cells might be induced by the changes in the nanostructure of the intrinsic layer. (c) 2006 Elsevier B.V. All rights reserved.

Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers

Hydrogenated nanocrystalline silicon (nc-Si:H) n-layers have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) wafers. The nc-Si:H n-layers were deposited by radio-frequency (RF) plasma enhanced chemical vapor deposition (PECVD), and characterized using Raman spectroscopy, optical transmittance and activation energy of dark-conductivity. The nc-Si:H n-layers obtained comprise fine grained nanocrystallites embedded in amorphous matrix, which have a wider bandgap and a smaller activation energy. Heterojunction solar cells incorporated with the nc-Si n-layer were fabricated using configuration of Ag (100 nm)/1T0 (80 nm)/n-nc-Si:H (15 nm)/buffer a-Si:H/p-c-Si (300 mu m)/Al (200 nm), where a very thin intrinsic a-Si:H buffer layer was used to passivate the p-c-Si surface, followed by a hydrogen plasma treatment prior to the deposition of the thin nanocrystalline layer. The results show that heterojunction solar cells subjected to these surface treatments exhibit a remarkable increase in the efficiency, up to 14.1% on an area of 2.43 cm(2). (c) 2006 Elsevier B.V. All rights reserved.

High-efficiency transfer and expression of AdCMV-p53 in human cervix adenocarcinoma cells induced by subclinical-dose carbon beam radiation

Purpose The aim of this study is to evaluate the eVect of carbon-beam irradiation on adenovirus-mediated p53 transfer in human cervix adenocarcinoma.Materials and methods The HeLa cells pre-exposed to carbon-beam or -ray, were infected with replication-deficient adenovirus recombinant vectors, containing human wild-type p53 (AdCMV-p53) and green Xuorescent protein (GFP) (AdCMV–GFP), respectively. The GFP transfer and p53 expression were detected by Xow cytometric analysis.Results The GFP transfer frequency in C-beam with AdCMV-GFP groups was 38–50% more than that inγ-ray with AdCMV–GFP groups. The percentage of p53 positive cells in the C-beam with AdCMV–p53 groups was 34–55.6% more than that in γ-ray with AdCMV-p53 groups (p < 0.05), suggesting that subclinical-dose C-beam irradiation could signiWcantly promote exogenous p53 transfer and p53 expression, and extend the duration of p53 expression in the HeLa cells. The expression of p21 increased with p53 expression in HeLa cells. The survival fractions for the 0.5–1.0 Gy C-beam with AdCMV-p53 groups were 38–43% less than those for the isodose γ-ray with AdCMV-p53 groups, and 31–40% less than those for the C-beam only groups (p <0.05).Conclusions The subclinical-dose C-beam irradiation could signiWcantly promote the transfer and expression of exogenous p53, extend the duration of p53 expression, and enhance the suppression of p53 on cervix adenocarcinoma cells.

High-efficiency transfer and expression of AdCMV-p53 in human hepatocellular carcinoma cells induced by low-dose carbon-ion radiation

Objective To investigate whether the irradiation with C-beam could enhance adenovirus-mediated transfer and expression of p53 in human hepatocellular carcinoma. Materials and methods HepG2 cells were exposed to C-beam or gamma-ray and then infected with replicationdeficient adenovirus recombinant vectors containing human wild-type p53 or green fluorescent protein, respectively. The transfer efficiency and expression level of the exogenous gene were detected by flow cytometric analysis. Cell survival fraction was detected by clonogenic assay. Results The transfer frequency in C-beam or gamma-irradiated groups increased by 50-83% and 5.7-38.0% compared with the control, respectively (P < 0.05). Compared with C-beam alone, p53 alone, and gamma-ray with p53, the percentages of p53 positive cells for 1 Gy C-beam with p53 increased by 56.0-72.0%, 63.5-82.0%, and 31.3-72.5% on first and third day after the treatments, respectively (P < 0.05). The survival fractions for the 2Gy C-bearn and AdCMV-p53 infection groups decreased to similar to 2%. Conclusion C-beam irradiation could significantly promote AdCMV-green fluorescent protein transfer and expression of p53.

Pore-filling membrane for direct methanol fuel cells based on sulfonated poly(styrene-ran-ethylene) and porous polyimide matrix

We have synthesized a porous co-polyimide film by coagulating a polyimide precursor in the non-solvent and thermal imidization. Factors affecting the morphology, pore size, porosity, and mechanical strength of the film were discussed. The porous polyimide matrix consists of a porous top layer and a spongy sub-structure with micropores. It is used as a porous matrix to construct sulfonated poly(styrene-ran-ethylene) (SPSE) infiltrated composite membrane for direct methanol fuel cell (DMFC) application. Due to the complete inertness to methanol and the very high mechanical strength of the polyimide matrix, the swelling of the composite membrane is greatly suppressed and the methanol crossover is also significantly reduced, while high proton conductivity is still maintained. Because of its higher proton conductivity and less methanol permeability, single fuel cell performance test demonstrated that this composite membrane outperformed Nafion membrane.

The effects of shell characteristics on the current-voltage behaviors of dye-sensitized solar cells based on ZnO/TiO2 core/shell arrays

The ZnO/TiO2 core/shell structure was formed through deposition of a TiO2 coating layer on the hydrothermally fabricated ZnO nanorod arrays through radio frequency magnetron sputtering. The effects of the TiO2 shell's characteristics on the current-voltage behaviors of the core/shell-based dye-sensitized solar cells (CS-DSSC) were investigated. As the rates of injection, transfer, and recombination of electrons of such CS-DSSC were affected significantly by the crystallization, morphology, and continuity of the TiO2 shells, the photovoltaic efficiency was accordingly varied remarkably. In addition, the efficiency was further improved by enhancing the surface area in the core/shell electrode.