Light-induced changes in diphasic nanocrystalline silicon films and solar cells
Data(s) |
2006
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Resumo |
A series of diphasic nanocrystalline silicon films and solar cells was prepared using different hydrogen dilution ratios of silane by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). It was observed that after light soaking the open circuit voltage (V-oc) of the diphasic solar cells increased, while that of amorphous silicon solar cells decreased. Raman scattering spectroscopy was performed on the series of diphasic silicon films before and after light soaking. It was found that after light soaking the nanostruclures in the diphasic nanocrystalline silicon films were changed. Both the grain sizes and grain volume fraction reduced, while the grain boundary components increased. These results provide experimental evidence for the conjecture that the light-induced increase in V-oc of the diphasic nanocrystalline solar cells might be induced by the changes in the nanostructure of the intrinsic layer. (c) 2006 Elsevier B.V. All rights reserved. A series of diphasic nanocrystalline silicon films and solar cells was prepared using different hydrogen dilution ratios of silane by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). It was observed that after light soaking the open circuit voltage (V-oc) of the diphasic solar cells increased, while that of amorphous silicon solar cells decreased. Raman scattering spectroscopy was performed on the series of diphasic silicon films before and after light soaking. It was found that after light soaking the nanostruclures in the diphasic nanocrystalline silicon films were changed. Both the grain sizes and grain volume fraction reduced, while the grain boundary components increased. These results provide experimental evidence for the conjecture that the light-induced increase in V-oc of the diphasic nanocrystalline solar cells might be induced by the changes in the nanostructure of the intrinsic layer. (c) 2006 Elsevier B.V. All rights reserved. zhangdi于2010-03-29批量导入 zhangdi于2010-03-29批量导入 Chinese Acad Sci, Inst Semicond, State Lab Surface Phys, Beijing 100083, Peoples R China; China Univ Geosci, Sch Mat Sci & Technol, Beijing 100083, Peoples R China |
Identificador | |
Idioma(s) |
英语 |
Publicador |
ELSEVIER SCIENCE BV PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
Fonte |
Hao, HY (Hao, Huiying); Liao, XB (Liao, Xianbo); Zeng, XB (Zeng, Xiangbo); Diao, HW (Diao, Hongwei); Xu, Y (Xu, Ying); Kong, GL (Kong, Guanglin) .Light-induced changes in diphasic nanocrystalline silicon films and solar cells .见:ELSEVIER SCIENCE BV .JOURNAL OF NON-CRYSTALLINE SOLIDS,PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS , JUN 15 2006,352 (9-20): 1904-1908 |
Palavras-Chave | #半导体材料 #silicon |
Tipo |
会议论文 |