DEVELOPMENT OF EUSTRONGYLIDES IGNOTUS (NEMATODA: DIOCTOPHMIDA) IN DOMESTIC DUCKS (ANAS PLATYRHYNCHOS DOMESTICA (L.))

Investigating the development of Eustrongylides ignotus in its definitive host would enable us to trace the complete life cycle of this nematode. Fourth-stage larvae isolated from naturally infected swamp eels (Monopterus albus) were used to infect domestic ducks (Anas platyrhynchos domestica [L.]). We observed that male and female worms exhibited different developmental patterns in host ducks. In males, the fourth molt occurred at day 1-2 post-infection (PI), after which they attained maturity on day 4 PI and died between day 7 and 9 PI. However, females underwent the fourth molt at day 2-4 PI, produced eggs from day 9 to 17 PI, and then degenerated and died. When compared 10 fourth-stage Female larvae, adult females demonstrated a considerable increase in total body size with a 151% increase in average body width and a 17% increase in average body length. However. the increase in size of the male larvae was not its significant as that in females. The average body width in adult males exhibited only a 45% increase over that in the larval stage.

谈镐生文集

本文集收入了著名力学家、应用数学家、中国科学院院士谈镐生先生在流体力学、稀薄气体动力学和应用数学研究领域的论文和研究报告26篇，谈镐生先生倡导和支持力学基础研究的有关文章和论述21篇，谈先生的学术活动和生活图片多幅，以及谈镐生先生生平，最后附有谈先生生平年表。

 

 

国产十大功劳属植物的分类学修订

本文通过广泛的标本室研究结合野外实地调查，对十大功劳植物进行全面的形态学性状分析研究，据此对国产十大功劳植物进行分类学修订；还开展了叶表皮形态、孢粉学和分子系统学等方面的研究，并就这些性状在十大功劳属植物中的分类价值以及属下系统发育的关系及意义进行了讨论。结果如下： 1. 形态学特征 在对国内、外18 家标本馆1500 余份标本（包括模式标本）的查阅及40 余个县针对性的野外居群考察基础上，对十大功劳属植物形态性状（包括前人使用过的）的变异式样及其分类学意义进行了分析，并对一些数量性状进行了详细的统计分析。最后确认叶柄长度、小叶形状、小叶宽度、锯齿类型、花梗与苞片的相对长度、苞片和外萼片形状、中萼片与内萼片的相对长度、花序类型、苞片形状、外萼片形状、花瓣顶端是否裂等性状在种内变异稳定，是比较可靠的分类学性状。然后，利用这些可靠的形态学性状对国产十大功劳属下种的范围进行了界定。 2. 叶表皮形态 通过对十大功劳属植物4组12个亚组53 个种及两个其它属近缘植物（Ranzania japonica and Nandina domestrica ）叶表皮特征分别在光镜和电镜下进行观察，光镜下叶表皮细胞形状多为不规则形，少数为近多边形，垂周壁为波状或近平直；电镜下根据叶片下表皮的角质层突起及气孔特征将十大功劳属植物分为10 种类型，气孔都分布于下表皮。叶表皮性状对理解该属的属下系统关系有重要意义。 3. 孢粉学研究 通过对十大功劳属植物4组9个亚组18 个种植物的花粉特征的观察，发现花粉形态在属内变化比较一致，对于讨论属内组间、亚组间和种间的演化关系意义不大。 4. 种子形态 通过对十大功劳属植物4个组9个亚组的24个种及一个相关种Nandina domestica 种子形态特征研究，发现种子形态（特别是种皮纹饰）在十大功劳属内具有重要的系统学意义。根据种皮纹饰（网眼形状、网脊等）可将十大功劳属植物分为9 个类型。 5.分子系统学 在前人的工作基础上增加了15 个种，基于44 种十大功劳植物和6 种小檗属植物ITS 序列分析，显示该属可分成4 大支，基本上支持前人的4个组的划分。但就中国种类而言，尽管有几支能被明显的划分，但总体上组下关系仍不明确。另外，以M.polydonta、M.Longibracteata、M.paucijuga 为主的一支与美洲种类聚在一起，这说明这一支所代表的种类与美洲种类有较近的关系。 6. 分类处理 基于上述研究，我们对国产十大功劳属植物进行了全面的分类学修订。与《中国植物志》相比：发现新分类群2 个，新等级4 个，增加新异名3个，省级新分布1 个，并对4 个种进行了补充及订正描述。并对一些疑难类群进行了充分讨论，最后确认国产十大功劳属植物共包括38 个种，2个亚种。同时基于叶表皮、种子形态、分子序列等证据，对十大功劳属下系统进行了讨论。

桃和苹果库源关系中源叶光合作用，光抑制及其光保护机制的研究

以‘早久保’（Prunus persica (L.) Batch.）为试材，在果实最后迅速生长期，通过去果处理降低库力，同时设留果对照，并通过环剥和保留相同数量叶片严格控制库源关系，进行了源叶净光合速率（Pn）、叶绿素荧光、叶黄素循环、抗氧化酶及抗氧化同化物日变化的研究。结果表明，和留果对照相比，去果处理显著降低了源叶Pn、气孔导度（gs）和蒸腾速率（E），但显著增加了胞间二氧化碳浓度（Ci）、叶面饱和蒸汽压亏缺（VPDl）和叶片温度（Tl）。光系统II光化学效率（ΦPSII）以及羧化速率（CE）与Pn平行降低。中午去果降低Pn主要归因于非气孔限制。在低库需条件下，开放的PSII反应中心捕获能量的降低以及关闭的PSII反应中心的增加导致了ΦPSII的降低。去果处理叶片中依赖于叶黄素循环的热耗散以及抗氧化系统的上调保护叶片免受光氧化破坏。和留果对照相比，去果处理的叶片有更大的叶黄素循环库，更高的脱环氧化状态以及更高的抗氧化酶活性，包括超氧化物歧化酶（SOD）、抗坏血酸过氧化物酶（APX）、单脱氢抗坏血酸还原酶（MDAR）和脱氢抗坏血酸还原酶（DHAR）的活性以及更高的还原型抗坏血酸（AsA）和还原型谷胱甘肽（GSH）的含量。但与此同时，去果显著增加了过氧化氢（H2O2）以及丙二醛（MDA）的含量，这意味着在去果处理的叶片中可能会发生光氧化破坏。 以一年生‘皇家嘎拉’苹果（Malus domestica Borkh.）组培苗为试材，通过环剥降低库力，进行了源叶Pn、叶绿素荧光、核酮糖-1,5-二磷酸羧化酶/氧化酶（Rubisco）以及光系统II（PSII）复合体关键蛋白PsbA和PsbO含量日变化的研究。和对照相比，环剥显著降低了源叶Pn、gs和E，但是却显著增加了Ci、Tl和淀粉的含量。在低库需下，开放的PSII反应中心捕获能量的降低以及关闭的PSII反应中心的增加导致了ΦPSII的降低。另一方面，环剥降低了光合作用关键酶Rubisco以及PSII复合体PsbA和放氧复合体PsbO的含量。以上结果表明，环剥降低Pn主要归因于非气孔限制。

Room temperature mobility above 2100 cm2/Vs in Al0.3Ga0.7N/AIN/GaN heterostructures grown on sapphire substrates by MOCVD

Al0.3Ga0.7N/AlN/GaN HEMT structures with significantly high mobility have been grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. At room temperature (RT) a Hall mobility of 2104 cm(2)/Vs and a two-dimensional electron gas (2DEG) density of 1.1x10(13) cm(-2) are achieved, corresponding to a sheet resistance of 277.8 Omega/sq. The elimination of V-shaped defects were observed on Al0.3Ga0.7N/AlN/GaN HEMT structures and correlated with the increase of 2DEG mobility. (c) 2006 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim.

Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures

Improved electrical properties of AlxGa1-xN/GaN high electron mobility transistor (HEMT) structures grown by metalorganic chemical vapor deposition (MOCVD) were achieved through increasing the Al mole fraction in the AlGaN barrier layers. An average sheet resistance of 326.6 Omega/sq and a good resistance uniformity of 98% were obtained for a 2-inch Al0.38Ga0 62N/GaN HEMT structure. The surface morphology of AlxGa1-xN/GaN HEMT structures strongly correlates with the Al content. More defects were formed with increasing Al content due to the increase of tensile strain, which limits further reduction of the sheet resistance. (c) 2006 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim.

The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure

An AlGaN/GaN HBT structure was grown by low-pressure metalorganic chemical vapor deposition (MOCVD) on sapphire substrate. From the high-resolution x-ray diffraction and transmission electron microscopy (TEM) measurements, it was indicated that the structure is of good quality and the AlGaN/GaN interfaces are abrupt and smooth. In order to obtain the values of Si doping and electronic concentrations in the AlGaN emitter and GaN emitter cap layers, Secondary Ion Mass Spectroscopy (SIMS) and electrochemical CV measurements were carried out. The results showed that though the flow rate of silane (SiH4) in growing the AlGaN emitter was about a quarter of that in growing GaN emitter cap and subcollector layer, the Si sputtering yield in GaN cap layer was much smaller than that in the AlGaN emitter layer. The electronic concentration in GaN was about half of that in the AlGaN emitter layer. It is proposed that the Si, Al co-doping in growing the AlGaN emitter layer greatly enhances the Si dopant efficiency in the AlGaN alloy. (c) 2006 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim.

Deep levels in high resistivity GaN epilayers grown by MOCVD

Undoped high resistivity (HR) GaN epilayers were grown on (0001) sapphire substrate by metalorganic chemical vapor deposition (MOCVD). Thermally stimulated current (TSC) and resistivity measurements have been carried out to investigate deep level traps. Deep levels with activation energies of 1.06eV and 0.85eV were measured in sample 1. Gaussian fitting of TSC spectra showed five deep levels in different samples. (c) 2006 WILEY VCH Vertag GmbH & Co. KGaA, Weinheim

Research on the band-gap of InN grown on siticon substrates

Photoluminescence (PL) and absorption experiments were carried out to examine the fundamental band-gap of InN films grown on silicon substrates. A strong PL peak at 0.78 eV was observed at room temperature, which is much lower than the commonly accepted value of 1.9 eV. The integrated PL intensity was found to depend linearly on the excitation laser intensity over a wide intensity range. These results strongly suggest that the observed PL is related to the emission of the fundamental inter-band transitions of InN rather than to deep defect or impurity levels. Due to the effect of band-filling with increasing free electron concentration, the absorption edge shifts to higher energy. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

High structural and optical quality 1.3 mu m GaInNAs/GaAs quantum well (QW) samples with 42.5% indium content were successfully grown by molecular beam epitaxy. The growth of well layers was monitored by reflection high-energy electron diffraction (RHEED). Room temperature photoluminescence (PL) peak intensity of the GaIn0.425NAs/GaAs (6 nm / 20 nm) 3QW is higher than, and the full width at half maximum (FWHM) is comparable to, that of In0.425GaAs/GaAs 3QW, indicating improved optical quality due to strain compensation effects by introducing N to the high indium content InGaAs epilayer. The measured (004) X-ray rocking curve shows clear satellite peaks and Pendellosung fringes, suggesting high film uniformity and smooth interfaces. The cross sectional TEM measurements further reveal that there are no structural defects in such high indium content QWs. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Growth and photoluminescence of InAlGaN films

Two quaternary InAlGaN films were grown by metal-organic chemical-vapor deposition (MOCVD) on sapphire (0001) substrates with and without high-temperature GaN interlayer, respectively. The structural and optical properties of the quaternary films were investigated by high-resolution X-ray diffraction (HRXRD), high-resolution electron microscopy (HREM), temperature-dependent photoluminescence (PL) spectroscopy and time-resolved photoluminescence (TRPL) spectroscopy. According to the HRXRD and PL results, it is demonstrated that two samples have the same crystal quality. The TRPL signals of both samples were fitted well as a stretched exponential decay from 14 K to 250 K, indicating significant disorder in the materials, which is attributed to recombination of excitons localized in disorder quantum nanostructures such as quantum dots or quantum disks originating from indium (In) clusters or In composition fluctuation. The cross-section HREM measurement further proves that there exist disorder quantum nanostructures in the quaternary. By investigating the temperature dependence of the dispersive exponent beta, it is shown that the stretched exponential decays of the two samples originate from different mechanisms. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Reduction in crystallographic tilt of lateral epitaxial overgrown GaN by using new patterned shape mask

We proposed a new method to suppress the crystallographic tilt in the lateral epitaxial overgrowth of GaN by using an oxide mask with a newly designed pattern. A rhombus mask with edges oriented in the direction of <10 - 10>(GaN) was used instead of the traditional stripe mask. The morphology evolution during the LEO GaN with the rhombus mask was investigated by SEM, and the crystallographic tilt in the LEO GaN was measured by DC-XRD. It is found that using the new rhombus mask can decrease the crystallographic tilt in the LEO GaN. In addition, this method makes the ELO GaN stripes easy to coalesce. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Annealing ambient controlled deep defect formation in InP

Deep defects in annealed InP have been investigated by deep level transient capacitance spectroscopy (DLTS), photo induced current transient spectroscopy (PICTS) and thermally stimulated current spectroscopy (TSC). Both DLTS results of annealed semiconducting InP and PICTS and TSC results of annealed semi-insulating InP indicate that InP annealed in phosphorus ambient has five defects, while lid? annealed in iron phospbide ambient has two defects. Such a defect formation phenomenon is explained in terms of defect suppression by the iron atom diffusion process. The correlation of the defects and the nature of the defects in annealed InP are discussed based on the results.

Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy

The in-plane optical anisotropy of several GaAs/AlGaAs quantum well samples with different well widths has been measured at room temperature by reflectance-difference spectroscopy (RDS). The RDS line shapes are found to be similar in all the samples examined here, which dominantly consist of two peak-like signals corresponding to 1HH-->1E and 1LH-->1E transition. As the well width is decreased, or the 1 ML InAs layer is inserted at one interface, the intensity of the anisotropy increases quickly. Our detail analysis shows that the anisotropy mainly arises from the anisotropic interface roughness. The results demonstrate that the RDS technique is sensitive to the interface structures.

Quantum computing

Quantum computing is a quickly growing research field. This article introduces the basic concepts of quantum computing, recent developments in quantum searching, and decoherence in a possible quantum dot realization.