他克莫司对UVA照射后HaCaT细胞增殖的影响

　目的　探讨不同浓度他克莫司(TM)对不同强度长波紫外线(UVA)照射HaCaT细胞24h和48h后细胞 增殖活性的影响。方法将培养的HaCaT细胞分别行2, 4 和8J / cm2 的UVA 照射,且照射前1h 分别加入50, 500 和 5 000pg/mL的TM,对照组分别加入50, 500和5 000pg/mL的TM,但不行UVA照射。各剂量组分别照射24h和48h后在 倒置相差显微镜下观察细胞的形态变化,MTT法检测细胞的增殖活性。结果　HaCaT细胞经UVA照射24h后,细胞连接 松散,细胞折光性较未照射组差,部分细胞死亡、脱壁;与未经UVA照射组相比,细胞增殖受到抑制( P < 0. 05) ,加入TM 组无明显变化( P > 0. 05) ;照射48h后细胞虽有大量增殖,但体积较小;与未经UVA 照射组相比,细胞增殖明显( P < 0. 05) ,加入TM组细胞增殖受到抑制(P < 0. 05) 。结论　TM可抑制UVA照射HaCaT细胞引起的过度增殖,对UVA照射 后的HaCaT细胞有保护作用。

不同光源下TiO_2膜对MC-RR光催化降解的比较研究

通过溶胶-凝胶法制备了纳米级的锐钛矿型TiO2膜,利用纯化的MC-RR分别研究了该膜在太阳光、UVA和UVC三种光源下对MC-RR的催化降解行为。结果表明,太阳光下TiO2膜对MC-RR的催化降解反应符合一级反应动力学,而在UVA和UVC下符合二级反应。不同光源下TiO2膜的催化效果差别较大,在太阳光下催化效果最为明显,反应速率常数由5.12×10-5·min-1增加到5.49×10-3·min-1,增加了两个数量级;UVA次之,由6.0×10-4L·mg-1·min-1增加到1.55×10-3L·mg-

静止和充气培养条件下短期紫外辐射对钝顶螺旋藻光化学效率的影响

为了研究短期太阳紫外辐射对钝顶螺旋藻的影响,作者将静止和充气培养的藻体,暴露在全波长太阳辐射PAB(PAR+UVA+UVB),去除UVB辐射PA(PAR+UVA)及切断所有紫外辐射的光合有效辐射P(PAR)三种光处理条件下,测定了其光化学效率的变化。结果表明,紫外辐射(UVP)及光合有效辐射(PAR)均能导致钝顶螺旋藻的光化学效率降低,表现出了明显的光抑制,但是,UVR可导致更大程度的光抑制。充气培养条件下,与早晨(07:00)初始值相比,PAR导致了11%~20%的光抑制,而UVR(PAB-P)所产生的

不同波段紫外光对微囊藻毒素光降解的影响

为优化光降解法去除饮用水中的微囊藻毒素,分别用UVA(l=300~400nm)和UVC(l=253.7nm)2种紫外光源研究了紫外光波长对MC-RR降解效率的影响.结果表明,不同波段的紫外光具有不同的催化效率和降解中间产物.在UVA下照射12h后,MC-RR仍有30%~50%残余,同时产生2种几何异构体4(Z)-Adda-MC-RR和6(Z)-Adda-MC-RR,且二者在整个反应过程中保持恒定的比例.而在UVC下,MC-RR除生成2种异构体外,还生成中间产物[三环-Adda]MC-RR,在0.850mW

Fabrication of improved FD SOIMOSFETs for suppressing edge effect

FD SOI MOSFETs with MESA and Irradiated FD SOI MOSFETs with LOCOS isolation usually show the edge effect, that is, the leakage current called hump is generated in the subthreshold region. According to different reasons for generating the edge effect, rounded corner process and BTS structure are applied to improve device performance. The results indicate that the above two methods are effective to reduce the edge effect and qualified devices are fabricated successfully.

Monostable-Bistable Transition Logic Element (MOBILE) Model for Single-Electron Transistors

The traditional monostable-bistable transition logic element (MOBILE) structure is usually composed of resonant tunneling diodes (RTD). This letter describes a new type MOBILE structure consisting of single-electron transistors (i.e. SET-MOBILE). The analytical model of single-electron transistors ( SET) has been considered three states (including an excited state) of the discrete quantum energy levels. The simulation results show negative differential conductance (NDC) characteristics in I-DS-V-DS curve. The SET-MOBILE utilizing NDC characteristics can successfully realize the basic logic functions as the RTD-MOBILE.

Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy

The wetting layers (WL) in InAs/GaAs quantum-dot system have been studied by reflectance difference spectroscopy (RDS), in which two structures related to the heavy-hole (HH) and light-hole (LH) transitions in the WL have been observed. The evolution and segregation behaviors of WL during Stranski-Krastanow (SK) growth mode have been studied from the analysis of the WL-related optical transition energies. It has been found that the segregation coefficient of Indium atoms varies linearly with the InAs amount in WL. In addition, the effect of the growth temperature on the critical thickness for InAs island formation has also been studied. The critical thickness defined by the appearance of InAs dots, which is determined by AFM, shows a complex variation with the growth temperature. However, the critical thickness determined by RDS is almost constant in the range of 510-540 degrees C.

High epitaxial growth rate of 4H-SiC using TCS as silicon precursor

High homoepitaxial growth of 4H-SiC has been performed in a home-made horizontal hot wall CVD reactor on n-type 4H-SiC 8 degrees off-oriented substrates in the size of 10 mm x 10 mm, using trichlorosilane (TCS) as silicon precursor source together with ethylene as carbon precursor source. Cross-section Scanning Electron Microscopy (SEM), Raman scattering spectroscopy and Atomic Force Microscopy (AFM) were used to determine the growth rate, structural property and surface morphology, respectively. The growth rate reached to 23 mu m/h and the optimal epilayer was obtained at 1600 degrees C with TCS flow rate of 12 seem in C/Si of 0.42, which has a good surface morphology with a low Rms of 0.64 nm in 10 mu mx10 mu m area.

Operational Optimization of GaN Thin Film Growth Employing Numerical Simulation in a Showerhead MOCVD Reactor

A detailed reaction-tran sport model was studied in a showerhead reactor for metal organic chemical vapor deposition of GaN film by using computational fluid dynamics simulation. It was found that flat flow lines without swirl are crucial to improve the uniformity of the film growth, and thin temperature gradient above the suscptor can increase the film deposition rate. By above-mentioned research, we can employ higher h (the distance from the susceptor to the inlet), P (operational pressure) and the rate of susceptor rotation to improve the film growth.

High Quality AlGaN Grown on GaN Template with HT-AlN Interlayer

When AlGaN is grown on GaN template, crack networks invariably generate when the thickness of the AlGaN layers over GaN exceeds the critical value. We used thin high temperature deposited AlN layer (HT-AlN) as the interlayer between GaN template and AlGaN epilayer which was very effective in eliminating the cracks in AlGaN epilayer. AlGaN layers with high Al mole fractions were also grown. Characterization showed that the crystalline quality of AlGaN epilayer was fairly good even when the At mole fraction was high.

Monolithic Integration of Light Emitting Diodes, Photodetector and Receiver Circuit in Standard CMOS Technology

A monolithic silicon CMOS optoelectronic integrated circuit (OEIC) is designed and fabricated with standard 0.35 mu m CMOS technology. This OEIC circuit consists of light emitting diodes (LED), silicon dioxide waveguide, photodiodes and receiver circuit. The silicon LED operates in reverse breakdown mode and can be turned on at 8.5V 10mA. The silicon dioxide waveguide is composed of multiple layers of silicon dioxide between different metals layers. A two PN-junctions photodetector composed of n-well/p-substrate junction and p(+) active implantation/n-well junction maximizes the depletion region width. The readout circuitry in pixels is exploited to handle as small as 0.1nA photocurrent. Simulation and testing results show that the optical emissions powers are about two orders higher than the low frequency detectivity of silicon CMOS photodetcctor and receiver circuit.

Combined transparent electrodes for high power GaN-based LEDs with long life time

In this paper fabrication of high power light emitting diodes (LEDs) with combined transparent electrodes on both P-GaN and N-GaN have been demonstrated. Simulation and experimental results show that comparing with traditional metal N electrodes the efficacy of LEDs with transparent N electrode is increased by more than 10% and it is easier in process than the other techniques. Further more, combining the transparent electrodes with dielectric anti-reflection film, the extraction efficiency can be improved by 5%. At the same time, the transparent electrodes were protected by the dielectric film and the reliability of LEDs can be improved.

AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD

AlGaN/AlN/GaN/InGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) structures with improved buffer isolation have been investigated. The structures were grown by MOCVD on sapphire substrate. AFM result of this structure shows a good surface morphology with the root-mean-square roughness (RMS) of 0.196 nm for a scan area of 5 mu mx5 mu m. A mobility as high as 1950 cm(2)/Vs with the sheet carrier density of 9.89x10(12) cm(-2) was obtained, which was about 50% higher than other results of similar structures which have been reported. Average sheet resistance of 327 Omega/sq was achieved. The HEMTs device using the materials was fabricated, and a maximum drain current density of 718.5 mA/mm, an extrinsic transconductance of 248 mS/mm, a current gain cutoff frequency of 16 GHz and a maximum frequency of oscillation 35 GHz were achieved.

Design of Low Power Multi-Standard Active-RC Filter for WLAN and DVB-H

In this paper, a low-power, highly linear, integrated, active-RC filter exhibiting a multi-standard (IEEE 802.11a/b/g and DVB-H) application and bandwidth (3MHz, 4MHz, 9.5MHz) is present. The filter exploits digitally-controlled polysilicon resister banks and an accurate automatic tuning scheme to account for process and temperature variations. The automatic frequency calibration scheme provides better than 3% corner frequency accuracy. The Butterworth filter is design for receiver (WLAN and DVB-H mode) and transmitter (WLAN mode). The filter dissipation is 3.4 mA in RX mode and 2.3 mA (only for one path) in TX mode from 2.85-V supply. The dissipation of calibration consumes 2mA. The circuit has been fabricated in a 0.35um 47-GHz SiGe BiCMOS technology, the receiver and transmitter occupy 0.28-mm(2) and 0.16-mm(2) (calibration circuit excluded), respectively.

A 5.6-mW Power Dissipation CMOS Frequency Synthesizer for L1/L2 Dual-Band GPS Application

This paper presents a wide tuning range CMOS frequency synthesizer for dual-band GPS receiver, which has been fabricated in a standard 0.18-um RF CMOS process. With a high Q on-chip inductor, the wide-band VCO shows a tuning range from 2 to 3.6GHz to cover 2.45GHz and 3.14GHz in case of process corner or temperature variation, with a current consumption varying accordingly from 0.8mA to 0.4mA, from a 1.8V supply voltage. The measurement results show that the whole frequency synthesizer costs a very low power consumption of 5.6mW working at L I band with in-band phase noise less than -82dBc/Hz and out-of-band phase noise about -112 dBc/Hz at 1MHz offset from a 3.142GHz carrier.