High Quality AlGaN Grown on GaN Template with HT-AlN Interlayer

When AlGaN is grown on GaN template, crack networks invariably generate when the thickness of the AlGaN layers over GaN exceeds the critical value. We used thin high temperature deposited AlN layer (HT-AlN) as the interlayer between GaN template and AlGaN epilayer which was very effective in eliminating the cracks in AlGaN epilayer. AlGaN layers with high Al mole fractions were also grown. Characterization showed that the crystalline quality of AlGaN epilayer was fairly good even when the At mole fraction was high.

When AlGaN is grown on GaN template, crack networks invariably generate when the thickness of the AlGaN layers over GaN exceeds the critical value. We used thin high temperature deposited AlN layer (HT-AlN) as the interlayer between GaN template and AlGaN epilayer which was very effective in eliminating the cracks in AlGaN epilayer. AlGaN layers with high Al mole fractions were also grown. Characterization showed that the crystalline quality of AlGaN epilayer was fairly good even when the At mole fraction was high.

zhangdi于2010-03-09批量导入

Made available in DSpace on 2010-03-09T07:08:14Z (GMT). No. of bitstreams: 1 277.pdf: 3432728 bytes, checksum: a7c044cf9104336edf947d9b167e65d1 (MD5) Previous issue date: 2008

IEEE Beijing Sect.; Chinese Inst Elect.; IEEE Electron Devices Soc.; IEEE EDS Beijing Chapter.; IEEE Solid State Circuits Soc.; IEEE Circuites & Syst Soc.; IEEE Hong Kong EDS, SSCS Chapter.; IEEE SSCS Beijing Chapter.; Japan Soc Appl Phys.; Elect Div IEEE.; URSI Commiss D.; Inst Elect Engineers Korea.; Assoc Asia Pacific Phys Soc.; Peking Univ, IEEE EDS Student Chapter.

[Yan, Jianchang; Wang, Junxi; Liu, Zhe; Liu, Naixin; Li, Jinmin] Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China

IEEE Beijing Sect.; Chinese Inst Elect.; IEEE Electron Devices Soc.; IEEE EDS Beijing Chapter.; IEEE Solid State Circuits Soc.; IEEE Circuites & Syst Soc.; IEEE Hong Kong EDS, SSCS Chapter.; IEEE SSCS Beijing Chapter.; Japan Soc Appl Phys.; Elect Div IEEE.; URSI Commiss D.; Inst Elect Engineers Korea.; Assoc Asia Pacific Phys Soc.; Peking Univ, IEEE EDS Student Chapter.