Comparison of TiO2 and ZrO2 films deposited by electron-beam evaporation and by sol-gel process

TiO2 and ZrO2 films are deposited by electron-beam (EB) evaporation and by sol-gel process. The film properties are characterized by visible and Fourier-transform infrared spectrometry, x-ray diffraction analysis, surface roughness measure, absorption and laser-induced damage threshold (LIDT) test. It is found that the sol-gel Elms have lower refractive index, packing density and roughness than EB deposited films due to their amorphous structure and high OH group concentration in the film. The high LIDT of sol-gel films is mainly due to their amorphous and porous structure, and low absorption. LIDT of EB deposited film is considerably affected by defects in the Elm, and LIDT of sol-gel deposited film is mainly effected by residual organic impurities and solvent trapped in the film.

Covalent modification of a glassy carbon surface by 4-aminobenzoic acid and its application in fabrication of a polyoxometalates-consisting monolayer and multilayer films

4-Aminobenzoic acid (4-ABA) was covalently grafted on a glassy carbon electrode (GCE) by amine cation radical formation in the electrooxidation process of the amino-containing compound. X-ray photoelectron spectroscopy measurement proves the presence of 4-carboxylphenylamine monolayer on the GCE. The redox responses of various electroactive probes were investigated on the 4-ABA-modified GCE. Electron transfer to Fe(CN)(6)(3-) in solutions of various pHs was studied by both cyclic voltammetry and electrochemical impedance analysis on the modified electrode. Changes in the solution pH value result in the variation of the terminal group charge state, based on which surface pK(a) values are estimated. The 4-ABA-modified GCE was used as a suitable charged substrate to fabricate polyoxometalates-consisting (POM-consisting) monolayer and multilayer films through layer-by-layer assembly based on electrostatic attraction. Cyclic voltammetry shows the uniform growth of these three-dimensional multilayer films. Taking K10H3[Pr-(SiMo7W4O39)(2)]. H2O (abbreviated as Pr(SiMo7W4)(2)), for example, the preparation and electrochemical behavior of its monolayer and multilayer film had been investigated in detail. This modification strategy is proven to be a general one suitable for anchoring many kinds of POMs on the 4-ABA-modified GCE.

LB multilayers and superlattice films of erbium fatty acid salts

Multilayers of Y-type bilayers of pure and mixed erbium palmitate(EP), nonadecanate(Er) and behenate(EB) on CaF2 substrates were prepared by conventional Langmuir-Blodgett (LB) method. II is demonstrated that two systems composed of alternating bilayer of different fatty acid salts are unidimensional superlattices. These LB films were characterized by means of x-ray photoelectronic Spectrometry (XPS), FTIR and x-ray diffraction (XRD) measurements.

STUDIES ON STRUCTURE OF EO/THF RANDOM COPOLYETHER(I) - NMR-STUDIES ON SOLUTION ACTION AND COMPLEX

The special action of TEO solution was investigated by 1D, 2D-NMR in CDCl3. For the present measurements, when the concentration of TEO was higher in CDCl3, the chemical shift difference (Delta delta) and the peak number of C-13 NMR spectrum were changed with increasing the solution concentration, At lower concentration(< 3% V/V ), the peaks will be closed together for -CH2O- resonance carbon and it is not the appearance of the narrowed, When temperature was changed, the Delta delta value was contrary to the solvent effect, So, the shifts of the resonance carbon in the NMR spectra indicated clearly that the complex formation for the system of CDCl3, and TEO molecular interaction were affected by the experiment temperature and the solution concentration.

Low temperature annealing effects on the structure and optical properties of ZnO films grown by pulsed laser deposition

ZnO thin films were deposited on glass substrates at room temperature (RT) similar to 500 degrees C by pulsed laser deposition (PLD) technique and then were annealed at 150-450 degrees C in air. The effects of annealing temperature on the microstructure and optical properties of the thin films deposited at each substrate temperature were investigated by XRD, SEM, transmittance spectra, and photoluminescence (PL). The results showed that the c-axis orientation of ZnO thin films was not destroyed by annealing treatments: the grain size increased and stress relaxed for the films deposited at 200-500 degrees C, and thin films densified for the films deposited at RT with increasing annealing temperature. The transmittance spectra indicated that E-g of thin films showed a decreased trend with annealing temperature. From the PL measurements, there was a general trend, that is UV emission enhanced with lower annealing temperature and disappeared at higher annealing temperature for the films deposited at 200-500 degrees C; no UV emission was observed for the films deposited at RT regardless of annealing treatment. Improvement of grain size and stoichiometric ratio with annealing temperature can be attributed to the enhancement of UV emission, but the adsorbed oxygen species on the surface and grain boundary of films are thought to contribute the annihilation of UV emission. It seems that annealing at lower temperature in air is an effective method to improve the UV emission for thin films deposited on glass substrate at substrate temperature above RT.

Oxygen pressure dependences of structure and properties of ZnO films deposited on amorphous glass substrates by pulsed laser deposition

ZnO films are prepared on glass substrates by pulsed laser deposition (PLD) at different oxygen pressures, and the effects of oxygen pressure on the structure and optoelectrical properties of as-grown ZnO films are investigated. The results show that the crystallite size and surface roughness of the films increase, but the carrier concentration and optical energy gap E-g decrease with increasing oxygen pressure. Only UV emission is found in the photoluminescence (PL) spectra of all the samples, and its intensity increases with oxygen pressure. Furthermore, there are marked differences in structure and properties between the films grown at low oxygen pressures (0.003 and 0.2 Pa) and the films grown at high oxygen pressures (24 and 150 Pa), which is confirmed by the fact that the crystallite size and UV emission intensity markedly increase, but the carrier concentration markedly decreases as oxygen pressure increases from 0.2 to 24 Pa. These results show that the crystal quality, including the microstructural quality and stoichiometry proportion, of the prepared ZnO films improves as oxygen pressure increases, particularly from 0.2 to 24 Pa.

Silica and alumina thin films grown by liquid phase deposition

This work demonstrates the condition optimization during liquid phase deposition (LPD) Of SiO2/GaAs films. LPD method is further applied to form Al2O3 films on semiconductors with poison-free materials. Proceeding at room temperature with inexpensive equipment, LPD of silica and alumina films is potentially serviceable in microelectronics and related spheres.

Structural and PL properties of Cu-doped ZnO films

Cu-doped ZnO films with hexagonal wurtzite structure were deposited on silicon (1 1 1) substrates by radio frequency (RF) sputtering technique. An ultraviolet (UV) peak at similar to 380nm and a blue band centered at similar to 430nm were observed in the room temperature photoluminescent (PL) spectra. The UV emission peak was from the exciton transition. The blue emission band was assigned to the Zn interstitial (Zn-i) and Zn vacancy (V-Zn) level transition. A strong blue peak (similar to 435 nm) was observed in the PL spectra when the alpha(Cu) (the area ratio of Cu-chips to the Zn target) was 1.5% at 100 W, and ZnO films had c-axis preferred orientation and smaller lattice mismatch. The influence of alpha(Cu) and the sputtering power on the blue band was investigated.

Fabrication, patterning and luminescence properties of X-2-Y2SiO5 : A (A = Eu3+, Tb3+, Ce3+) phosphor films via sol-gel soft lithography

X-2-y(2)SiO(5):A (A = Eu3+, Tb3+, Ce3+) phosphor films and their patterning were fabricated by a sol-gel process combined with a soft lithography. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), atomic force microscopy (AFM), scanning electron microscopy (SEM) optical microscopy and photoluminescence (PL) were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 900 degreesC with X-1-Y2SiO5, which transformed completely to X-2-Y2SiO5 at 1250 degreesC. Patterned thin films with different band widths (5 pin spaced by 5 pm and 16 pm spaced by 24 pm) were obtained by a soft lithography technique (micromoulding in capillaries, MIMIC). The SEM and AFM study revealed that the nonpattemed phosphor films were uniform and crack free, and the films mainly consisted of closely packed grains with an average size of 350 run. The doped rare earth ions (A) showed their characteristic emissions in X-2-Y2SiO5 phosphor films, i.e., D-5(0)-F-7(J) (J = 0, 1, 2,3,4) for Eu3+, D-5(3), (4)-F-7(J) (J = 6, 5, 4, 3) for Tb3+ and 5d (D-2)-4f (F-2(2/5),(2/7)) for Ce3+, respectively. The optimum doping concentrations for EU3+, Tb3+ were determined to be 13 and 8 mol% of Y3+ in X-2-Y2SiO5 films, respectively.

Comparative studies on electrochemical behavior and electrocatalytic properties of heteropolyanion-containing multilayer films prepared by two methods

Two modification methods for multilayer formation, i.e. immersion growth and electrochemical growth, were studied comparatively for their influence on the electrochemical behavior and the electrocatalytic properties of the thus-fabricated SiMo11V-containing multilayer films. Electrochemical growth was proven to be a more suitable method than immersion growth in preparing uniform ultrathin multilayer self-assemblies with good functions. We investigated the effects of scan rate and pH on the electrochemical behavior of the monolayer and multilayer films. We also compared the electrocatalytic effects on the reduction of BrO3- and HNO2 by the multilayer films prepared by the two methods. Moreover, the influence of multilayer thickness and the identity of the outermost layer on the electrocatalytic properties were studied. Much higher catalytic currents appeared on the thicker multilayer films than those on the thinner ones. On the other hand, the catalytic currents became smaller when the multilayer films with SiMo11V as the outermost layer were covered with an additional quarternized poly(4-vinylpyridine) layer partially complexed with osmium bis(2,2'-bypyridine) chloride (QPVP-Os layer). These influences were believed to be due to the different quantities of electrocatalyst loaded in the multilayer films and the blocking effect of the QPVP-Os outermost layer. (C) 2000 Elsevier Science S.A. All rights reserved.

Electrochemical behavior and electrocatalytic properties of ultrathin films containing silicotungstic heteropolyanion SiW12O404-

We describe here a controlled fabrication of ultrathin monolayer and multilayer films consisting of silicotungstic heteropolyanion SiW12O404- and a cationic polymer of quaternized poly(4-vinylpyridine) partially complexed with osmium bis(2,2'-bipyridine) on Au electrodes previously self-assembled with cysteamine monolayers based on layer-by-layer electrostatic interaction. The thus-forming monolayer and multilayer chemically modified electrodes are investigated by cyclic voltammetry on their electrochemical behavior and electrocatalytic properties. The composite ultrathin films exhibit remarkable electrocatalytic effects on the reduction of BrO3-, H2O2, and HNO2. The electrocatalytic effects on HNO2 reduction are enhanced with increasing layer number from 1 to 3 but level off with much thicker multilayers. The stability of the monolayer and multilayer films is also examined. (C) 2000 The Electrochemical Society. S0013-4651(99)04-057-4. All rights reserved.

The fabrication of dipped CdS and sputtered ITO thin films for photovoltaic solar cells

Stable bilayer thin films of indium tin oxide (ITO) on CdS and CdS on ITO were formed for the window material of solar cells by chemical bath and sputtering methods. Scanning electron microscopy and X-ray diffraction studies have shown that both the ITO and CdS films are continuous, homogeneous, with high compactness. Measurement of the CdS film thickness across the 2 x 4 cm(2) reveals the good uniformity of these films. Four-point probe measurements show that the resistivity of a CdS film on an ITO surface is much better than that of the single CdS film The thermal stability of an ITO/CdS bilayer, interfacial reaction and optical transmittance were investigated at different annealing temperatures and environments (air, vacuum and N-2 + H-2). The results showed that the ITO/CdS bilayer film is a good window material for the CuInSe2 and CdTe cells. It is a simple method using a small amount of the cadmium compound.

A generalized wave action conservative equation for the dissipative dynamical system in the nearshore region

To describe the various complex mechanisms of the dissipative dynamical system between waves, currents, and bottoms in the nearshore region that induce typically the wave motion on large-scale variation of ambient currents, a generalized wave action equation for the dissipative dynamical system in the nearshore region is developed by using the mean-flow equations based on the Navier-Stokes equations of viscous fluid, thus raising two new concepts: the vertical velocity wave action and the dissipative wave action, extending the classical concept, wave action, from the ideal averaged flow conservative system into the real averaged flow dissipative system (that is, the generalized conservative system). It will have more applications.

A New theory for evaluating the number density of inclusions in films

A new formulation derived from thermal characters of inclusions and host films for estimating laser induced damage threshold has been deduced. This formulation is applicable for dielectric films when they are irradiated by laser beam with pulse width longer than tens picoseconds. This formulation can interpret the relationship between pulse-width and damage threshold energy density of laser pulse obtained experimentally. Using this formulation, we can analyze which kind of inclusion is the most harmful inclusion. Combining it with fractal distribution of inclusions, we have obtained an equation which describes relationship between number density of inclusions and damage probability. Using this equation, according to damage probability and corresponding laser energy density, we can evaluate the number density and distribution in size dimension of the most harmful inclusions. (c) 2005 Elsevier B.V. All rights reserved.

Influence of different substrates on laser induced damage thresholds at 1064 nm of Ta2O5 films

Ta2O5 films are prepared on Si, BK7, fused silica, antireflection (AR) and high reflector (HR) substrates by electron beam evaporation method, respectively. Both the optical property and laser induced damage thresholds (LIDTs) at 1064 nm of Ta2O5 films on different substrates are investigated before and after annealing at 673 K for 12h. It is shown that annealing increases the refractive index and decreases the extinction index, and improves the O/Ta ratio of the Ta2O5 films from 2.42 to 2.50. Moreover, the results show that the LIDTs of the Ta2O5 films are mainly correlated with three parameters: substrate property, substoichiometry defect in the films and impurity defect at the interface between the substrate and the films. Details of the laser induced damage models in different cases are discussed.