Significant Residue Features Revealed By Eigenvalue Decomposition Analysis Of Blosum Matrices

Here we attempt to characterize protein evolution by residue features which dominate residue substitution in homologous proteins. Evolutionary information contained in residue substitution matrix is abstracted with the method of eigenvalue decomposition. Top eigenvectors in the eigenvalue spectrums are analyzed as function of the level of similarity, i.e. sequence identity (SI) between homologous proteins. It is found that hydrophobicity and volume are two significant residue features conserved in protein evolution. There is a transition point at SI approximate to 45%. Residue hydrophobicity is a feature governing residue substitution as SI >= 45%. Whereas below this SI level, residue volume is a dominant feature. (C) 2007 Elsevier B.V. All rights reserved.

快速确定45钢疲劳极限的试验方法

材料的疲劳过程是能量耗散的过程,在宏观上表现为热耗散,能量理论是研究材料疲劳行为微观机理和宏观现象的桥梁。文中利用红外热像仪对具有颈缩部分的45号钢试件疲劳过程中的温度变化进行了研究,探讨了影响温度变化的机制,并介绍了快速确定45号钢疲劳极限的方法。实验结果表明,该方法所测得的疲劳极限合理,且该方法具有非接触、便捷、低成本等优点。

拉伸载荷作用下基体表层激光离散预处理对铬镀层/45钢基开裂行为的影响

采用激光离散预处理钢基体再电镀铬层技术得到了一种新型复合结构,研究了这种新型复合结构在拉伸载荷作用下的开裂行为特征,并与无激光处理钢基体的试样在同样试验条件下的开裂特征进行了对比分析。结果表明:有激光离散预处理钢基体试样的承载能力要高于无激光预处理钢基体试样的承载能力,且有激光处理的试样开裂区域在两个激光带之间(无激光处理区),主裂纹呈现明显的周期性特征。本研究结果可归结为激光预处理钢基体不仅改善了基体表层的应力状态和力学性能,而且还改善了后续铬镀层的力学性能。

Impact of polarized illumination on high NA imaging in ArF immersion lithography at 45 nm node

Immersion lithography has been considered as the mainstream technology to extend the feasibility of optical lithography to further technology nodes. Using proper polarized illumination in an immersion lithographic tool is a powerful means to enhance the image quality and process capability for high numerical aperture (NA) imaging. In this paper, the impact of polarized illumination on high NA imaging in ArF immersion lithography for 45 nm dense lines and semi-dense lines is studied by PROLITH simulation. The normalized image log slope (NILS) and exposure defocus (ED) window are simulated under various polarized illumination modes, and the impact of polarized illumination on image quality and process latitude is analyzed. (C) 2007 Elsevier GmbH. All rights reserved.

Control of polarization for a broadband dichroic filter at 45 degrees incidence

A method for the control of polarization for a broadband dichroic filter was reported and some design examples were elaborated. This method could be applied over a wide range of wavelengths and a wide range of polarizations in the transmission region. A nonpolaiizing broadband dichroic filter and a broadband dichroic filter with certain polarization were designed and fabricated by electron beam evaporation with ion beam assisted deposition. The experimental spectral performances showed good agreement with their theoretical curves. In addition, the application of the method was discussed. (c) 2007 Optical Society of America

An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application

Optimized AlGaN/AlN/GaN high electron mobility transistor (HEMT) with high mobility GaN channel layer structures were grown on 2-in. diameter semi-insulating 6H-SiC substrates by MOCVD. The 2-in. diameter GaN HEMT wafer exhibited a low average sheet resistance of 261.9 Omega/square, with the resistance un-uniformity as low as 2.23%. Atomic force microscopy measurements revealed a smooth AlGaN surface whose root-mean-square roughness is 0.281 nm for a scan area of 5 x 5 mu m. For the single-cell HEMTs device of 2.5-mm gate width fabricated using the materials, a maximum drain current density of 1.31 A/mm, an extrinsic transconductance of 450 mS/mm, a current gain cutoff frequency of 24 GHz and a maximum frequency of oscillation 54 GHz were achieved. The four-cell internally-matched GaN HEMTs device with 10-mm total gate width demonstrated a very high output power of 45.2 W at 8 GHz under the condition of continuous-wave (CW), with a power added efficiency of 32.0% and power gain of 6.2 dB. To our best knowledge, the achieved output power of internally-matched devices are the state-of-the-art result ever reported for X-band GaN-based HEMTs. Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved.

玻璃盖板与45°膜复合结构透过率的研究

讨论了一种类似蜂窝或V型膜的玻璃盖板与45°膜复合结构(简称45°膜结构)的光热性能。其透过率比蜂窝结构高，隔热性能与蜂窝结构和V型膜结构相当，在低纬地区应用效果甚好。

多层In_(0.55)Al_(0.45)As/A_(0.5)Ga_(0.5)As量子点的变温光致发光研究

测量了自组织多层In_(0.55)Al_(0.45)As/Al_(0.5)Ga_(0.5)As量子点的变温光致发光谱，同时观察到来自浸润层和量子点的发光，首次直接观察了浸润层和量子点之间的载流子热转移。分析发光强度随温度的变化发现浸润发光的热淬灭包括两个过程

不同尺寸分布的自组织In_(0.55)Al_(0.45)As/Al_(0.5)Ga_(0.5)As量子点的静压光谱

在15K测量了不同尺寸分布的In_(0.55)Al_(0.45)As/Al_(0.5)Ga_(0.5)As量子点的静压我致发光，静压范围为0--1.3GPa。常压下观察到三个发光峰，分别来源于不同尺寸的量子点(横向直径分别为26、52和62nm)的发光。它产的压力系数分别为82、94和98meV/GPa,都小于In_(0.55)Al_(0.45)As体材料带边的压力系数，特别是尺寸为26nm的小量子点比In_(0.55)Al_(0.45)As体材料带边小17%，并且压力系数随量子点尺寸的变小而减小。理论计算表明有效质量的增在和Γ-X混合是量子点压力系数变小的主要原因，并得到横向直径为26和52nm的小量子点的Γ－X混合势为15和10meV。根据实验还确定In_(0.55)Al_(0.45)As/Al_(0.5)Ga_(0.5)As量子点系统X能带具有Ⅱ类结构，并且估算出价带不连续量为0.15±0.02。