Impact of polarized illumination on high NA imaging in ArF immersion lithography at 45 nm node


Autoria(s): Yuan Qiongyan; 王向朝; Qiu Zicheng
Data(s)

2009

Resumo

Immersion lithography has been considered as the mainstream technology to extend the feasibility of optical lithography to further technology nodes. Using proper polarized illumination in an immersion lithographic tool is a powerful means to enhance the image quality and process capability for high numerical aperture (NA) imaging. In this paper, the impact of polarized illumination on high NA imaging in ArF immersion lithography for 45 nm dense lines and semi-dense lines is studied by PROLITH simulation. The normalized image log slope (NILS) and exposure defocus (ED) window are simulated under various polarized illumination modes, and the impact of polarized illumination on image quality and process latitude is analyzed. (C) 2007 Elsevier GmbH. All rights reserved.

National Natural Science Foundation of China [60578051]

Identificador

http://ir.siom.ac.cn/handle/181231/2382

http://www.irgrid.ac.cn/handle/1471x/10716

Idioma(s)

英语

Fonte

Yuan Qiongyan;王向朝;Qiu Zicheng.,Optik,2009,120(7):325-329

Palavras-Chave #Immersion lithography #Polarized illumination #Normalized image log slope #Exposure defocus window
Tipo

期刊论文