The fabrication of self-aligned InAs nanostructures on GaAs(331)A substrates

Self-aligned InAs quantum wires (QWRs) or three-dimensional (3D) islands are fabricated on GaAs(331)A substrates by molecular beam epitaxy (MBE). InAs QWRs are selectively grown on the step edges formed by GaAs layers. The surface morphology of InAs nanostructures is carefully investigated by atomic force microscopy (AFM) measurements. Different growth conditions, such as substrate temperature, growth approaches, and InAs coverage, exert a great effect on the morphology of InAs islands. Low substrate temperatures favour the formation of wirelike nanostructures, while high substrate temperatures favour 3D islands. The shape transition is attributed to the trade-off between surface energy and strain energy. A qualitative agreement of our experimental data with the theoretical results derived from the model proposed by Tersoff and Tromp is achieved.

Surface morphology control of strained InAs/GaAs(331)A films: From nanowires to island-pit pairs

We have studied the effect of molecular beam epitaxy growth conditions on the surface morphology of strained InAs/GaAs(331)A films. Our results reveal that InAs nanowires aligned along the [1 (1) over bar0] direction are formed under As-rich conditions, which is explained by the effect of anisotropic buffer layer surface roughing. Under In-rich conditions, however, the surface morphology of the InAs layers is characterized by a feature of island-pit pairs. In this case, cooperative nucleation of islands and pits can lower the activation barrier for domain growth. These results suggest that the surface morphology of strained InAs layers is highly controllable. (C) 2005 American Institute of Physics.

Corrugated surfaces formed on GaAs(331)A substrates: the template for laterally ordered InGaAs nanowires

Morphology evolution of high-index GaAs(331)A surfaces during molecular beam epitaxy (MBE) growth has been investigated in order to achieve regularly distributed step-array templates and fabricate spatially ordered low-dimensional nano-structures. Atomic force microscope (AFM) measurements have shown that the step height and terrace width of GaAs layers increase monotonically with increasing substrate temperature. By using the step arrays formed on GaAs(331)A surfaces as the templates, we have fabricated highly ordered InGaAs nanowires. The improved homogeneity and the increased density of the InGaAs nanowires are attributed to the modulated strain field caused by vertical multi-stacking, as well as the effect of corrugated surface of the template. Photoluminescence (PL) tests confirmed remarkable polarization anisotropy.

Self-organized InAs quantum wires on GaAs (331)A substrates

Self-organized InAs quantum wires (QWRs) were fabricated on the step edges of the GaAs (331)A surface by molecular beam epitaxy. The lateral size of InAs QWRs was saturated by the terrace width (i.e., 90 nm) while the size along the step lines increased with the increasing thicknesses of the InAs layers, up to 1100 nm. The height of InAs QWRs varied from 7.9 nm to 13 nm. The evolution of the morphology of InAs QWRs was attributed to the diffusion anisotropy of In adatoms.

Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires

Morphology evolution of high-index (331)A surfaces during molecular beam epitaxy (MBE) growth have been investigated in order to uncover their unique physic properties and fabricate spatially ordered low dimensional nanostructures. Atomic Force Microscope (AFM) measurements have shown that the step height and terrace width of GaAs layers increase monotonically with increasing substrate temperature in conventional MBE. However, this situation is reversed in atomic hydrogen-assisted MBE, indicating that step bunching is partly suppressed. We attribute this to the reduced surface migration length of Ga adatoms with atomic hydrogen. By using the step arrays formed on GaAs (331)A surfaces as the templates, we fabricated laterally ordered InGaAs self-aligned nanowires.

Surface morphology evolution of strained InAs/GaAs(331)a films

Surface morphology evolution of strained InAs/GaAs(331)A films was systematically investigated in this paper. Under As-rich conditions, InAs elongated islands aligned along [1 (1) over bar0] are formed at a substrate temperature of 510 degrees C. We explained it as a result of the anisotropic diffusion of adatoms. Under In-rich conditions, striking change has occurred with respect to the surface morphology of the InAs layers. Instead of anisotropic InAs elongated islands, unique island-pit pairs randomly distributed on the whole surface were observed. Using cooperative nucleation mechanisms proposed by Jesson et al. [Phys. Rev. Lett. 77, 1330 (1996)], we interpret the resulting surface morphology evolution.

Morphology Evolution of (331)A High-Index Surfaces During Atomic Hydrogen Assisted Molecular Beam Epitaxy (MBE)

Step like morphology of (331)A high-index surfaces during atomic hydrogen assisted molecular beam epitaxy (MBE) growth has been investigated. Atomic Force Microscope (AFM) measurements show that in conventional MBE, the step heights and terrace widths of GaAs layers increase monotonically with increasing substrate temperatures. The terrace widths and step densities increase with increasing the GaAs layer thickness and then saturates. And, in atomic hydrogen assisted MBE, the terrace width reduces and density increases when depositing the same amount of GaAs. It attributes this to the reduced surface migration length of Ga adatoms with atomic hydrogen. Laterally ordered InAs self-aligned nano-wires were grown on GaAs (331)A surfaces and its optical polarization properties were revealed by photoluminescence measurements.

GaAs(331)A面InAs自组织纳米结构形貌演化

采用分子束外延方法在CaAs(331)A高指数衬底上制备自对齐InAs纳米线(QWRs)或者三维(3D)岛状结构.InAs纳米线(QWRs)选择性生长在CaAs层的台阶边缘.通过原子力显微镜(AfM)仔细研究了InAs纳米微结构的表面形貌,发现不同的生长条件,包括:衬底温度、生长速率、和InAs层厚度等,对InAa表面形貌有很大的影响.如,低温更容易导致线状纳米微结构的形成,而高温更利于3D岛状结构形成.表面形貌的转变归结于表面能同应变能之间的竞争.

DNA和细胞对重离子辐照诱导DNA双链断裂的敏感性比较

用倒转脉冲场凝胶电泳 (PIGE)比较研究了 50 Me V/u1 2 C6 +辐照小鼠 B1 6黑色素瘤细胞及其脱蛋白 DNA分子 ,从而诱导 DNA双链断裂 (DSB)的辐射敏感性。结果表明 ,不论辐照脱蛋白 DNA还是辐照完整细胞 ,诱导的 DNA片段释放百分比 (PR)都随着剂量的增加而增加 ,在超过 4 0 Gy后 ,PR趋向一个近似相同的准阈值～ 81 %。辐照脱蛋白 DNA诱导的 DSB产额为 0 .4 0 DSBs/1 0 0 Mbp/Gy,辐照完整细胞诱导的 DSB产额约为 0 .1 9DSBs/1 0 0 Mbp/Gy。说明脱蛋白 DNA分子比完整细胞对重离子辐照要敏感

N=81近球形141Nd和142Pm核高自旋态能级结构

本论文首先介绍了原子核高自旋态研究的一般概况以及其物理解释的基本理论，然后介绍了在束Y谱学及其实验技术。在此基础上分析和讨论了141Nd和142Pm核的高自旋态实验研究。利用能量为75-95 Mevl0F束流，通过反应128Te（19F，5ny)142Pm研究了双奇核142Pm的高自旋态能级结构。实验中进行了丫射线激发函数和Y-Y符合测量。建立了限Pm核高自旋态能级纲图，位于前人建议的一个2毫秒、8-同质异能态之上。由测量的丫射线激发函数和Y一Y符合关系，澄清了一个67微秒同质异能态及其衰变混乱的指定，本论文把67微秒同质异能态及其衰变指定给了142Pm，建议此同质异能态的激发能为2828.5 keV，推断此同质异能态的自旋宇称为13-。在本实验研究的同时，有人利用133Cs（13C，4n）142Pm反应报道了一个建立在2毫秒、8-同质异能态之上的142P亩高自旋态能级纲图；除了相应Y跃迁的多极性有较大差别外，他们报道的瞬Pm高自旋态能级纲图与我们建立在67微秒同质异能态上的基本一致。根据能级结构的系统性，识别了四个两准粒子态，一个为g7/2质子空穴耦合h11／2中子空穴激发，另外三个是h11／2质子藕合h11／2中子空穴多重态成员。根据经验壳模型计算建议了几个新建的关键能级的组态。67微秒同质异能态的组态被建议为一个四空穴态（πg_(7/2)~(-1)d_(5/2)~(-2)vh_(11/2)~(-1)）_(13)-。通过130Te（16O，5nγ）141Nd反应布居了14tNd的高自旋态能级。对反应产生的在束丫射线进行了γ射线单谱和γ-γ符合测量。基于γ-γ符合关系，对原来的141Nd的高自旋态能级纲图做了很大修改，建立了14lNd核高自旋态能级纲图。新观察到了一个由八条γ射线组成的长E2级联跃迁，并指定给了141Nd。基于实验测量的γ跃迁各向异性，建议了141Nd部分能级的自旋值。根据经验壳模型和粒子震动祸合理论，用一个h11／2价中子空穴祸合142Nd核芯晕态激发定性地解释141Nd的能级结构，新发现的长E2级联跃迁很可能涉及两个hu/2质子激发。

小叶白蜡接种外生菌根真菌对土壤石油烃的降解效果

采用盆栽实验研究了小叶白蜡(Fraxinus sogdiana)接种4种外生菌根真菌(E1-毛边滑锈伞(Hebeloma mesophaeusm)、E2-劣味乳菇(Lactarius insulsns)、E3-松塔牛肝菌(Stro-bilomyces floccopus)和E4-丝膜菌(Cortinarius russus)对沈抚灌区土壤石油烃的降解效果。结果表明:在白蜡不同组合双接种及混合接种中,以混合接种对土壤石油烃的降解效果最好,降解率比对照提高23.6%;其次为双接种中的E1E3和E2E4组合,降解率分别比对照提高21.0%和12.7%。接种外生菌根真菌可促进白蜡生长,尤其可明显提高其根生物量,增加侧根数,接种E1E3、E2E4和混合菌使白蜡侧根数分别增加了100%、67%和81%。相关分析表明,石油烃降解率与白蜡的侧根数呈显著相关,可能是其降解率提高的主要原因。