Evaluation of the Interfacial Adhesion between Brittle Coating and Ductile Substrate by Cross-Secitional Indention

The cross-sectional indentation method is extended to evaluate the interfacial adhesion between brittle coating and ductile substrate. The experimental results on electroplated chromium coating/steel substrate show that the interfacial separation occurs due to the edge chipping of brittle coating. The corresponding models are established to elucidate interfacial separation processes. This work further highlights the advantages and potential of this novel indentation method.

A Mechanical Model For The Quantification Of The Effect Of Laser Quenching On Ctod In Steels

The technology of laser quenching is widely used to improve the surface properties of steels in surface engineering. Generally, laser quenching of steels can lead to two important results. One is the generation of residual stress in the surface layer. In general, the residual stress varies from the surface to the interior along the quenched track depth direction, and the residual stress variation is termed as residual stress gradient effect in this work. The other is the change of mechanical properties of the surface layer, such as the increases of the micro-hardness, resulting from the changes of the microstructure of the surface layer. In this work, a mechanical model of a laser-quenched specimen with a crack in the middle of the quenched layer is developed to quantify the effect of residual stress gradient and the average micro-hardness over the crack length on crack tip opening displacement (CTOD). It is assumed that the crack in the middle of the quenched layer is created after laser quenching, and the crack can be a pre-crack or a defect due to some reasons, such as a void, cavity or a micro-crack. Based on the elastic-plastic fracture mechanics theory and using the relationship between the micro-hardness and yield strength, a concise analytical solution, which can be used to quantify the effect of residual stress gradient and the average micro-hardness over the crack length resulting from laser quenching on CTOD, is obtained. The concise analytical solution obtained in this work, cannot only be used as a means to predict the crack driving force in terms of the CTOD, but also serve as a baseline for further experimental investigation of the effect after laser-quenching treatment on fracture toughness in terms of the critical CTOD of a specimen, accounting for the laser-quenching effect. A numerical example presented in this work shows that the CTOD of the quenched can be significantly decreased in comparison with that of the unquenched. (C) 2008 Elsevier B.V. All rights reserved.

Demonstration of GaN/InGaN light emitting diodes on (100) beta-Ga2O3 substrates by metalorganic chemical vapour deposition

The growth and fabrication of GaN/InGaN multiple quantum well (MQW) light emitting diodes ( LEDs) on ( 100) beta-Ga2O3 single crystal substrates by metal-organic chemical vapour deposition (MOCVD) technique are reported. x-ray diffraction (XRD) theta-2 theta. scan spectroscopy is carried out on the GaN buffer layer grown on a ( 100) beta-Ga2O3 substrate. The spectrum presents several sharp peaks corresponding to the ( 100) beta-Ga2O3 and ( 004) GaN. High-quality ( 0002) GaN material is obtained. The emission characteristics of the GaN/InGaN MQW LED are measurement. The first green LED on beta-Ga2O3 with vertical current injection is demonstrated.

Winter Temperature and UV Are Tightly Linked to Genetic Changes in the p53 Tumor Suppressor Pathway in Eastern Asia

The tumor suppressor p53 is a master sensor of stress. Two human-specific polymorphisms, p53 codon 72 and MDM2 SNP309, influence the activities of p53. There is a tight association between cold winter temperature and p53 Arg72 and between low UV intensity

MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate

High-mobility Al0.3Ga0.7N/AlN/GaN high electron mobility transistors (HEMT) structure has been grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrate. Electron mobility of 2185 cm(2)/V s at room temperature and 15,400 cm(2)/V s at 80 K with 2DEG density of 1.1 X 10(13) cm(-2) are achieved. The corresponding sheet resistance of the HEMT wafer is 258.7 Omega/sq. The AlN interfacial layer between the GaN buffer and the AlGaN barrier layer reduces the alloy disorder scattering. X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy (TEM) measurements have been conducted, and confirmed that the wafer has a high crystal quality. (c) 2006 Elsevier B.V. All rights reserved.

Fabrication of thermo-optic switch in silicon-on-insulator

Silicon-on-insulator technology has been used to fabricate 2 x 2 thermo-optic switches. The switch shows crosstalk of -23.4 dB and extinction ratio of 18.1 dB in the bar-state. The switching speed is less than 30 mus and the power consumption is about 420 mW The measured excess loss is 1.8 dB. These merits make the switch more attractive for applications in wavelength division multiplexing.

Hydrogen-rich gas production from biomass air and oxygen/steam gasification in a downdraft gasifier

Biomass gasification is an important method to obtain renewable hydrogen, However, this technology still stagnates in a laboratory scale because of its high-energy consumption. In order to get maximum hydrogen yield and decrease energy consumption, this study applies a self-heated downdraft gasifier as the reactor and uses char as the catalyst to study the characteristics of hydrogen production from biomass gasification. Air and oxygen/steam are utilized as the gasifying agents. The experimental results indicate that compared to biomass air gasification, biomass oxygen/steam gasification improves hydrogen yield depending on the volume of downdraft gasifier, and also nearly doubles the heating value of fuel gas. The maximum lower heating value of fuel gas reaches 11.11 MJ/ N m(3) for biomass oxygen/steam gasification. Over the ranges of operating conditions examined, the maximum hydrogen yield reaches 45.16 g H-2/kg biomass. For biomass oxygen/steam gasification, the content of H-2 and CO reaches 63.27-72.56%, while the content Of H2 and CO gets to 52.19-63.31% for biomass air gasification. The ratio of H-2/CO for biomass oxygen/steam gasification reaches 0.70-0.90, which is lower than that of biomass air gasification, 1.06-1.27. The experimental and comparison results prove that biomass oxygen/steam gasification in a downdraft gasifier is an effective, relatively low energy consumption technology for hydrogen-rich gas production.

1.2 MeV/40 mA电子加速器的研制

装置应国内辐照加工需求而研制,采用单相无铁芯变压器结构,初级供以400 Hz的中频交流,次级全波整流倍压后级联形成直流高压。加速管同心地位于次级线圈内,电子枪采用间热式LaB6发射阴极。该装置结构紧凑,电子束1.2 MeV/40 mA,束流功率近50 kW,不稳定度均好于±5%,电功率转化效率高于65%,已通过8 h运行测试。

高羊茅对高温的生理生态响应

分析了昼/夜38℃/30℃高温下2种高羊茅草坪草(凌志和交战Ⅱ)与狗牙根叶片的相对含水量、叶绿素含量、细胞膜脂过氧化、抗氧化系统以及光合作用等生理生态指标的变化.结果表明:随高温时间的延长,2种高羊茅的相对含水量、叶绿素含量、净光合速率和最大光能转化效率均呈降低趋势,而且凌志高羊茅的平均降幅小于交战Ⅱ高羊茅.经过9d的高温处理,凌志高羊茅叶片超氧化物歧化酶、过氧化物酶和过氧化氢酶的平均活性比交战Ⅱ高羊茅分别高19.7%、17.9%和17.7%,而凌志和交战Ⅱ高羊茅的净光合速率分别下降了60.7%和81.9%.与交战Ⅱ高羊茅相比,凌志高羊茅具有更高的光化学转换功能,有利于减轻高温对光合器官的损伤,使其保持较高的净光合速率.在整个高温处理过程中,狗牙根的各项生理生态指标随时间变化的差异不显著.狗牙根、凌志高羊茅和交战Ⅱ高羊茅对高温胁迫的适应能力由强到弱.

杭州市区土生苔藓植物分布与生态因子的关系

在杭州市区设立的21个样点中,记录到土生苔藓植物22科31属47种.基于样点中苔藓植物种类的生态重要值和样点生态因子数据进行典范对应分析.结果表明:人为干扰和土壤pH是影响杭州市区土生苔藓植物分布的主要生态因子.在市区平原地势的公园和绿地,人为干扰较大,土壤呈碱性,苔藓植物种类以小羽藓属、真藓属和丛藓科为主;而在海拔较高的丘陵地区,人为干扰较小,土壤呈酸性,苔藓植物种类相对丰富,侧蒴藓类和苔类较多.对47种土生苔藓植物进行生态位宽度计测,多数苔藓植物的生态位宽度较窄.其中,东亚拟鳞叶藓的生态位宽度最大(0.3510),广泛分布在西湖西南的丘陵地区;平叶毛口藓和细叶小羽藓的生态位宽度次之,分别为0.2239和0.2185,是市区平原地势的公园和绿地中的常见种.